Untitled
Abstract: No abstract text available
Text: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended
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ISL9V2540S3ST
250mJ,
250mJ
ISL9V2540S3ST
O-263)
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IGBT DRIVER ignition coil automotive
Abstract: igbt ignition automotive ignition coil on plug automotive ignition ignition coil IGBT advance ignition automotive ignition coil ignition driver ignition switch on coil smart igbt ignition coil
Text: ISL9V2540S3ST EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended
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ISL9V2540S3ST
250mJ,
250mJ
ISL9V2540S3ST
O-263)
IGBT DRIVER ignition coil automotive
igbt ignition
automotive ignition coil on plug
automotive ignition
ignition coil IGBT
advance ignition
automotive ignition coil
ignition driver
ignition switch on coil smart igbt
ignition coil
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2SK2960
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm
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2SK2960
250mJ
O-220E
2SK2960
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IGBT DRIVER ignition coil automotive
Abstract: V2540S igbt spice automotive ignition automotive ignition coil ignition igbt ISL9V2540S3S ISL9V2540S3ST advance ignition igbt ignition
Text: ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V General Description Features o ! SCIS Energy = 250mJ at TJ = 25 C ! Logic Level Gate Drive Applications ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications Package The ISL9V2540S3S is a next generation ignition IGBT that
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ISL9V2540S3S
250mJ,
250mJ
ISL9V2540S3S
O-263)
IGBT DRIVER ignition coil automotive
V2540S
igbt spice
automotive ignition
automotive ignition coil
ignition igbt
ISL9V2540S3ST
advance ignition
igbt ignition
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V2540S
Abstract: IGBT DRIVER ignition coil automotive 5482E automotive ignition coil ISL9V2540S3S ISL9V2540S3ST igbt spice ignition spice smart ignition igbt
Text: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended
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ISL9V2540S3ST
250mJ,
250mJ
ISL9V2540S3ST
O-263)
V2540S
IGBT DRIVER ignition coil automotive
5482E
automotive ignition coil
ISL9V2540S3S
igbt spice
ignition spice
smart ignition igbt
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2SK2960
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 ● Contactless relay
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2SK2960
250mJ
O-220E
2SK2960
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications
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2SK2960
250mJ
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MP-25
Abstract: NP82N06CLC NP82N06DLC NP82N06ELC
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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30v 28a mosfet
Abstract: 2N7218U IRF140SMD IRFN140
Text: IRFN140 2N7218U SEME LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN140
2N7218U
300ms,
30v 28a mosfet
2N7218U
IRF140SMD
IRFN140
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transistor 5586
Abstract: IRFN3710
Text: IRFN3710 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN3710
transistor 5586
IRFN3710
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2N7218
Abstract: IRFM140 LE17
Text: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFM140
2N7218
250mJ
O-254AA
2N7218
LE17
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Untitled
Abstract: No abstract text available
Text: IRFN3710 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN3710
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VHF50HN
Abstract: is-50nx-c2 capacitor 10nj IS-B50LN-C2 IS-MR50LNZ 15 IS-50NX-C1 IS-B50LN-C1 wireless walkie talkie circuit IS-VU50HN IS-CT50HN
Text: G L O B A L L I G H T N I N G S O L U T I O N S PolyPhaser Corporation Product Catalog PRODUCT CATALOG ac Power Protectors dc Power Protectors Grounding Solutions Protected Bias-T dc Blocked Filters Combiner Protectors dc Blocked Single Transmitter Twisted Pair Cable Protectors
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Untitled
Abstract: No abstract text available
Text: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)
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IRF140
300ms,
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Untitled
Abstract: No abstract text available
Text: SEME IRFN140SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN140SMD
IRFN140"
IRFN140SMD
IRFN140SMD-JQR-B
O276AB)
1660pF
145nC
145nC
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Untitled
Abstract: No abstract text available
Text: S EM E IRF140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRF140SMD
00A/ms
300ms,
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFM140
2N7218
250mJ
O-254AA
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IRF140SM
Abstract: No abstract text available
Text: SEME IRF140SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 100V 13.9A 0.077W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRF140SM
220SM
00A/ms
300ms,
IRF140SM
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Untitled
Abstract: No abstract text available
Text: S EM E IRFN140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN140SMD
00A/ms
300ms,
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C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition
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Untitled
Abstract: No abstract text available
Text: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE
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IRF140
300ms,
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Untitled
Abstract: No abstract text available
Text: Illl W . mi SEME IRFN140 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 100 V 13.9A 0.077Q V DSS 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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IRFN140
O-220SM
250mJ
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Untitled
Abstract: No abstract text available
Text: im s ffs n il IRFN140 SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11 s 100 V V Dss 0.25 13.9A ^D(cont) 3.0 r*-H 0 .077G R DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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IRFN140
O-220SM
300ms,
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Untitled
Abstract: No abstract text available
Text: im i ^ i mi IRF140SM SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 100V 13.9A 0.07712 V DSS 0.25 I D(cont) 3.0 ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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IRF140SM
T0-220SM
300ms,
S1331S7
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