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    250N10 Search Results

    250N10 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
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    250N10 Price and Stock

    Renesas Electronics Corporation RBA250N10CHPF-4UA02-GB0

    MP-25LZU
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    DigiKey RBA250N10CHPF-4UA02-GB0 Cut Tape 780 1
    • 1 $5.88
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    RBA250N10CHPF-4UA02-GB0 Digi-Reel 780 1
    • 1 $5.88
    • 10 $4.137
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    RBA250N10CHPF-4UA02-GB0 Reel 800
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    Littelfuse Inc IXFK250N10P

    MOSFET N-CH 100V 250A TO264AA
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    DigiKey IXFK250N10P Tube 26 1
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    Newark IXFK250N10P Bulk 300
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    RS IXFK250N10P Bulk 8 Weeks 25
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    • 100 $23.4
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    IXYS Corporation IXTK250N10

    MOSFET N-CH 100V 250A TO264
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    DigiKey IXTK250N10 Box 25
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    Component Electronics, Inc IXTK250N10 2
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    IXYS Corporation IXTE250N10

    MOSFET N-CH 100V 250A SOT227B
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    DigiKey IXTE250N10 Tube
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    Littelfuse Inc IXFX250N10P

    MOSFET N-CH 100V 250A PLUS247-3
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    DigiKey IXFX250N10P Tube 300
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    Newark IXFX250N10P Bulk 300
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    Find more 250N10 price and stock on Findchips.com

    250N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    weight TO-264

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100


    Original     		PDF 250N10 728B1 123B1 728B1 065B1 weight TO-264

    Untitled

    Abstract: No abstract text available
    Text: IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100 V VGS Continuous ±20 V VGSM


    Original     		PDF 250N10 065B1 728B1 123B1 728B1

    250N10

    Abstract: megamos
    Text: IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100 V VGS Continuous ±20 V VGSM


    Original     		PDF 250N10 065B1 728B1 123B1 728B1 250N10 megamos