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    256K SYNCHRONOUS DRAM SAMSUNG Search Results

    256K SYNCHRONOUS DRAM SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    CY7C0853AV-100BBI Rochester Electronics CY7C0853 - Flex36 3.3V 256K X 36 Synchronous Dual-Port RAM, Industrial Temp Visit Rochester Electronics Buy
    54S163J/B Rochester Electronics LLC 54S163 - Synchronous 4-Bit Counters Visit Rochester Electronics LLC Buy

    256K SYNCHRONOUS DRAM SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S8S3122X16

    Abstract: S8S3122X16-TCR1 S8S3122X16-TCR2
    Text: S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 CMOS SDRAM Revision History Version 0.0 Sep. 2001


    Original     		PDF S8S3122X16 16bit AG1000re 50-TSOP2-400CF 20MAX 10MAX 075MAX S8S3122X16 S8S3122X16-TCR1 S8S3122X16-TCR2

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


    Original     		PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    SRAM sheet samsung

    Abstract: K6R4016VIC ISAS512K16LTD 256K Synchronous DRAM samsung
    Text: Data Sheet Part No. ISAS512K16LTD Irvine Sensors Corporation Microelectronics Products Division 8Mbit 512K x 16 SRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISAS512K16LTD I/O16 I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 SRAM sheet samsung K6R4016VIC ISAS512K16LTD 256K Synchronous DRAM samsung

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		PDF Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620

    SRAM 4T cell

    Abstract: memory cell 4T 6T
    Text: Introduction to Cypress SRAMs Abstract An SRAM is a memory element that is a key part of the core of many systems. Most high-performance systems have SRAMs in them. SRAM stands for STatic Random Access Memory. SRAMs differ in many repsects rom other kinds of


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    micom p122

    Abstract: micom p127 samsung spindle motor dvd rom Samsung dvd player circuit diagram ks1453 dvd efm KS1461 KS1452 vcd player block diagram dvd circuit diagram
    Text: DATA PROCESSOR KS1453 INTRODUCTION The KS1453 is a Data Process IC which acts as a buffer control for outputting the demodulated data by Hand Shake. It also executes error corrections of the Sliced output of the RF signal from the disc EFM signals . It is


    Original     		PDF KS1453 KS1453 128-QFP micom p122 micom p127 samsung spindle motor dvd rom Samsung dvd player circuit diagram dvd efm KS1461 KS1452 vcd player block diagram dvd circuit diagram

    S3C2410A-20

    Abstract: S3C2410A26 S3C2410A-26 S3C2410A20 S3C2410A 272-FBGA uart protocol touch screen Internal ROM Booting TOUCH SCREEN MCU ARM920T
    Text: S3C2410A 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION This manual describes SAMSUNG's S3C2410A 16/32-bit RISC microprocessor. This product is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance microcontroller solution in small die size. To reduce total system cost, the S3C2410A includes the following


    Original     		PDF S3C2410A S3C2410A 16/32-bit 10-bit 64-Byte 64-Byte) 200MHz S3C2410A-20) 266MHz S3C2410A-20 S3C2410A26 S3C2410A-26 S3C2410A20 272-FBGA uart protocol touch screen Internal ROM Booting TOUCH SCREEN MCU ARM920T

    KS84C21

    Abstract: MEC 2MHZ SS52M 430-0144
    Text: KS84C21/C22 ¡ H SAM SUNG DYNAMIC RAM CONTROLLERS Preliminary Semiconductor September 1988 FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic RAM DRAM controllers. They simplify


    OCR Scan     		PDF KS84C21/C22 KS84C21 KS84C22 MEC 2MHZ SS52M 430-0144

    smart modular

    Abstract: SM332Q4 SM332Q4A0
    Text: • Telecom & Industrial SRAM Modules • SMART Modular Technologies Custom designs available QUICK REFERENCE GUIDE: 12 CACHE SRAM MODULES CACHE SIZE CACHE TYPE SPEED PART NUMBER DIMENSIONS L x H x TOr. AVAILABILITY INTEL COASt COMPLIANT, L2 CACHE MODULES, 1 6 0 PIN, 6 4 BIT DATA BUS


    OCR Scan     		PDF 512KB 256KB 256KB SM364SCSP83XI15 SM364SCSPB3XI15 SM364TCSP83XI15 SM364T8A083XI15 SM21664 OSGUCACHEIO96 smart modular SM332Q4 SM332Q4A0

    Untitled

    Abstract: No abstract text available
    Text: DYNAMIC RAM CONTROLLERS KS84C21/C22 Preliminary FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic R A M DRAM controllers. They simplify the interface between the microprocessor and the DRAM


    OCR Scan     		PDF KS84C21/C22 KS84C21 KS84C22 68-Pin 84-Pin 84CXX 84C21 84C22

    Untitled

    Abstract: No abstract text available
    Text: KS84C31/32 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­


    OCR Scan     		PDF KS84C31/32 KS84C31 KS84C32

    I486

    Abstract: KS84C31 KS84C32 MC68030 MC68040 RSC18 schematic diagram samsung led
    Text: DYNAMIC RAM CONTROLLERS KS84C31/32 PRODUCT OVERVIEW FEATURES The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­


    OCR Scan     		PDF KS84C31/32 16Mbit 68-pin KS84C31) 84-pln KS84C32) I486 KS84C31 KS84C32 MC68030 MC68040 RSC18 schematic diagram samsung led

    SAMSUNG HT Q9

    Abstract: Dynamic RAM Controller samsung led monitor Synchronous DRAM and Samsung schematic diagram samsung led DLSFT samsung monitor circuit diagrams 256KDRAM 84c21
    Text: KS84C21/C22 DYNAMIC RAM CONTROLLERS Preliminary FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs • Page, nibble and static column accesses • Interleaved or non-interleaved accesses to maximize system performance • Programmable or mask-programmed versions


    OCR Scan     		PDF KS84C21/C22 25MHz 68-Pin 84CXX 84C21 84C22 25MHz 84-Pin SAMSUNG HT Q9 Dynamic RAM Controller samsung led monitor Synchronous DRAM and Samsung schematic diagram samsung led DLSFT samsung monitor circuit diagrams 256KDRAM

    a7710

    Abstract: videoflow samsung image signal processor ARRAY MICROSYSTEMS QCIF samsung real-time decoding GG317 H.261 encoder chip
    Text: KS0143 ICC ELECTRONICS DSP The KS0143 (ICC : Image Compression Coprocessor) integrated circuit is a very high performance programmable processor optimized for the execution of DCT-based image compression algorithms such as MPEG-1, JPEG, and H.261. In combination with commonly


    OCR Scan     		PDF KS0143 KS0143 KS0144 a7710 videoflow samsung image signal processor ARRAY MICROSYSTEMS QCIF samsung real-time decoding GG317 H.261 encoder chip

    ARRAY MICROSYSTEMS

    Abstract: H.261 encoder chip S0020-0 videoflow H.261 codec chip XAD10 QCIF samsung XAD22
    Text: KS Ol 4 4 M E C DSP ELECTRONICS The KS0144 (MEC: Motion Estimation FEATURES Coprocessor) integrated circuit is a 7.2 GOPS • A single KS0144 performs real-time motion parallel processor specifically optimized for the real estimation in compliance with MPEG-1 (ISO /


    OCR Scan     		PDF KS0144 KS0144 KS0143 KS0144s 71b4142 0D311D1 ARRAY MICROSYSTEMS H.261 encoder chip S0020-0 videoflow H.261 codec chip XAD10 QCIF samsung XAD22

    Untitled

    Abstract: No abstract text available
    Text: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly


    OCR Scan     		PDF KS84EC30 KS84EC30 68040/68EC030 68-Pln 84EC30 40MHz

    Samsung KS84C32 68030

    Abstract: 68EC030
    Text: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly


    OCR Scan     		PDF KS84EC30 68040/68EC030 68-pln KS84EC30 68-Pin 84EC30 40MHz Samsung KS84C32 68030 68EC030

    68030

    Abstract: No abstract text available
    Text: KS84C31/32 FEATURES 40 MHz operation Easy Interface to Motorola and Intel CPUs 68040/68030 burst mode operation i486 burst mode operation Page, static column and nibble mode accesses Interleaved and non-lnterleaved accesses Synchronous and asynchronous operation


    OCR Scan     		PDF KS84C31/32 16Mbit 68-pln KS84C31) 84-pin KS84C32) KS84C31/32 68030

    5A/12DIOR-DRC

    Abstract: No abstract text available
    Text: JAM Ca '! « S A M S U N G K S 8 4 E C 3 0 DYNAMIC RAM CONTROLLER Sen,¡conductor M archi 991 FEATURES PRODUCT OVERVIEW The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the


    OCR Scan     		PDF KS84EC30 68040/68EC030 KS84C31 KS84C31, 26-bit GE/5K/01 5A/12DIOR-DRC

    68EC030

    Abstract: on4475 Motorola 68030 68030 KS84C31 KS84C32 MC68040 MC68EC030 oti schematic
    Text: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly


    OCR Scan     		PDF KS84EC30 68040/68EC030 68-pln KS84EC30 68-Pin 84EC30 84EC30 40MHz 68EC030 on4475 Motorola 68030 68030 KS84C31 KS84C32 MC68040 MC68EC030 oti schematic

    k552

    Abstract: K552 motorola aaeo LA 7873 68EC030 architecture of 80486 microprocessor M9M material KS84C31 KS84C32 MC68040
    Text: KS84EC30 SAMSUNG DYNAMIC RAM CONTROLLER Semiconductor M archi 991 PRODUCT OVERVIEW FEATURES The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly


    OCR Scan     		PDF KS84EC30 68040/68EC030 68-pin KS84EC30 GE/5K/01 k552 K552 motorola aaeo LA 7873 68EC030 architecture of 80486 microprocessor M9M material KS84C31 KS84C32 MC68040