CY7C1361V25
Abstract: CY7C1363V25 CY7C1365V25
Text: 329 CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device
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CY7C1361V25
CY7C1363V25
CY7C1365V25
36/256K
32/512K
113-MHz
117-MHz
100-MHz
80-MHz
100-pin
CY7C1361V25
CY7C1363V25
CY7C1365V25
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Untitled
Abstract: No abstract text available
Text: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage
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MX27L4100/27L4096
8/256K
MX27L4096,
MX27L4100,
MX27L4100/4096
MX27L4096)
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MX27C4100DC
Abstract: MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100
Text: INDEX MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • Operating current: 60mA • Standby current: 100uA • Package type: • 256K x 16 organization MX27C4096, JEDEC pin out • 512K x 8 or 256K x 16 organization(MX27C4100, • •
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MX27C4100/27C4096
8/256K
100uA
MX27C4096,
MX27C4100,
MX27C4100/4096
MX27C4096)
MX27C4100)
100uA
PM0197
MX27C4100DC
MX27C4096DC-10
mx27C4100DC-10
MX27C4100DC-12
mx27c4096dc
EPROM sop 40
MX27C
transistor organ
MX27C4096
MX27C4100
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GI9332
Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8
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MB83256
MB83512
MB831000
MB832000
MB834100
MB834000
MB834200
27C1024H
27C101A
27C301A
GI9332
mb831000
MB834000
23C2001
23C1001
23c1000
UPD23C1001
23c4001
HN62304
mb832000
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MX27L4096
Abstract: PM0307 27l41-
Text: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage
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MX27L4100/27L4096
8/256K
MX27L4096,
MX27L4100,
MX27L4100/4096
MX27L4096)
MX27L41Each
MX27L4096
PM0307
27l41-
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CY7C1361V25
Abstract: CY7C1363V25 CY7C1365V25
Text: CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device — 8.5 ns (for 100-MHz device)
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CY7C1361V25
CY7C1363V25
CY7C1365V25
36/256K
32/512K
113-MHz
117-MHz
100-MHz
80-MHz
100-pin
CY7C1361V25
CY7C1363V25
CY7C1365V25
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MX27C4096DC-10
Abstract: MX27C4100 MX27C4096 MX27C4100DC-10 MX27C4096DC-12 MX27C4100DC10 MX27C4100DC EPROM 40PIN 27c4100 MX27C4100DC-12
Text: Introduction Selection Guide MX27C4100/27C4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27C4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 100/120/150 ns
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MX27C4100/27C4096
8/256K
MX27C4096,
MX27C4100,
MX27C4100/4096
MX27C4096)
MX27C4100)
MX27C4096DC-10
MX27C4100
MX27C4096
MX27C4100DC-10
MX27C4096DC-12
MX27C4100DC10
MX27C4100DC
EPROM 40PIN
27c4100
MX27C4100DC-12
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27C4100
Abstract: 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q
Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns
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MX27C4100/27C4096
8/256K
MX27C4096,
MX27C4100,
100uA
MX27C4100/4096
MX27C4096)
MX27C4100)
singP14
FEB/25/2000
27C4100
27c4096
27C4096 eprom
ups vh 2000
MX27C4096
MX27C4100
MX27C4096Q
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27C4096
Abstract: EPROM sop 40 MX27C4096 MX27C4100 27c4100
Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns
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MX27C4100/27C4096
8/256K
MX27C4096,
MX27C4100,
100uA
MX27C4100/4096
MX27C4096)
MX27C4100)
sing13/1997
FEB/25/2000
27C4096
EPROM sop 40
MX27C4096
MX27C4100
27c4100
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Untitled
Abstract: No abstract text available
Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns
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MX27C4100/27C4096
8/256K
MX27C4096,
MX27C4100,
100uA
MX27C4100/4096
MX27C4096)
MX27C4100)
PM0197
FEB/25/2000
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27c4100
Abstract: No abstract text available
Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns
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MX27C4100/27C4096
8/256K
MX27C4096,
MX27C4100,
100uA
MX27C4100/4096
MX27C4096)
MX27C4100)
progr/17/1997
FEB/25/2000
27c4100
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00C2H
Abstract: No abstract text available
Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns
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MX27C4100/27C4096
8/256K
MX27C4096,
MX27C4100,
100uA
MX27C4100/4096
MX27C4096)
MX27C4100)
PM0197
FEB/25/2000
00C2H
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5v rs232 UART interface
Abstract: db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM RS530 xcvr 256K X 16
Text: Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module
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Am186TMCC/CH/CU
Am186
RS422
RS530
160-PQFP
5v rs232 UART interface
db9 rs232 socket
RS232 DB9
DB9 rs232
5V RS422 USB
db25 usb
16-DRAM
xcvr
256K X 16
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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Untitled
Abstract: No abstract text available
Text: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9
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V105HJ8/9
V105HJ8/9
30-lead
V10SHJ8/9
V105H
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53C256
Abstract: 53C104 V53C104
Text: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory
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V104J8/9
V104J8/9
30-lead
53C256
53C104
V53C104
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S-1317
Abstract: No abstract text available
Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four
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28-pin
600mW
IDT7187
200mV
IDT7MP156
7MP156
S13-176
S-1317
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pd 3174
Abstract: ACS35
Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four
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28-pin
600mW
IDT7187
IDT7MP156
200mV
7MP156
256Kx
pd 3174
ACS35
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0436A8
Abstract: No abstract text available
Text: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations
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85Volt
IBM0418A4ACLAA
IBM0436A8ACLAA
IBM0418A8ACLAA
IBM0436A4ACLAA
GA14-4662-00
0436A8
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Untitled
Abstract: No abstract text available
Text: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature
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V105AJ8/9
30-lead
V105AJ8/9
V105A
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Untitled
Abstract: No abstract text available
Text: IBM0418A81QLAA IBM0418A41QLAA P relim inary IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O
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IBM0418A81QLAA
IBM0418A41QLAA
IBM0436A81QLAA
IBM0436A41QLAA
512x18)
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pin diagram of ic 4066
Abstract: ic tc 4066 diagram 4066 cmos pin diagram of ic 4066 with pin out IDT7MB4065 7MB4066 P 4066
Text: PRELIMINARY IDT7MB4065 IDT7MB4066 256K X 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES In te g rate d D e vice Technology» In c. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static R AM modules The ID T 7 M B 406 5/40 66a re high-speed, high density 256K
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20/256K
IDT7MB4065
IDT7MB4066
48-pin
IDT7MB4065/4066are
IDT7MB4065/4066
20/2S6K
7MB4065
pin diagram of ic 4066
ic tc 4066 diagram
4066 cmos
pin diagram of ic 4066 with pin out
7MB4066
P 4066
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Untitled
Abstract: No abstract text available
Text: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations
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IBM0418A4ACLAA
IBM0436A8ACLAA
0418A8ACLAA
IBM0436A4ACLAA
A14-4662-00
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PCMCIA Flash Memory Card 512K
Abstract: PP-1040 ceweh
Text: PCMCIA/JEIDA FLASH MEMORY 1. VARIATION Part Number HW B257ES* HW S513ES* HW B101ES* HW B201ES* HWB401 E S * Memory Size 256K 512K 1M 2M 4M BYTE BYTE BYTE BYTE BYTE Description 256K 256K 512K 1M 2M x x x x x 16 16 16 16 16 bit bit bit bit bit FLASH FLASH
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B257ES*
S513ES*
B101ES*
B201ES*
HWB401
GWB257
HWB513,
HWB101,
HWB201,
HWB401
PCMCIA Flash Memory Card 512K
PP-1040
ceweh
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