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    256K X 16 Search Results

    256K X 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F020-90/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    CY7C0853AV-100BBI Rochester Electronics CY7C0853 - Flex36 3.3V 256K X 36 Synchronous Dual-Port RAM, Industrial Temp Visit Rochester Electronics Buy

    256K X 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1361V25

    Abstract: CY7C1363V25 CY7C1365V25
    Text: 329 CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device


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    PDF CY7C1361V25 CY7C1363V25 CY7C1365V25 36/256K 32/512K 113-MHz 117-MHz 100-MHz 80-MHz 100-pin CY7C1361V25 CY7C1363V25 CY7C1365V25

    Untitled

    Abstract: No abstract text available
    Text: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage


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    PDF MX27L4100/27L4096 8/256K MX27L4096, MX27L4100, MX27L4100/4096 MX27L4096)

    MX27C4100DC

    Abstract: MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100
    Text: INDEX MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • Operating current: 60mA • Standby current: 100uA • Package type: • 256K x 16 organization MX27C4096, JEDEC pin out • 512K x 8 or 256K x 16 organization(MX27C4100, • •


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    PDF MX27C4100/27C4096 8/256K 100uA MX27C4096, MX27C4100, MX27C4100/4096 MX27C4096) MX27C4100) 100uA PM0197 MX27C4100DC MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


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    PDF MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000

    MX27L4096

    Abstract: PM0307 27l41-
    Text: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage


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    PDF MX27L4100/27L4096 8/256K MX27L4096, MX27L4100, MX27L4100/4096 MX27L4096) MX27L41Each MX27L4096 PM0307 27l41-

    CY7C1361V25

    Abstract: CY7C1363V25 CY7C1365V25
    Text: CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device — 8.5 ns (for 100-MHz device)


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    PDF CY7C1361V25 CY7C1363V25 CY7C1365V25 36/256K 32/512K 113-MHz 117-MHz 100-MHz 80-MHz 100-pin CY7C1361V25 CY7C1363V25 CY7C1365V25

    MX27C4096DC-10

    Abstract: MX27C4100 MX27C4096 MX27C4100DC-10 MX27C4096DC-12 MX27C4100DC10 MX27C4100DC EPROM 40PIN 27c4100 MX27C4100DC-12
    Text: Introduction Selection Guide MX27C4100/27C4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27C4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 100/120/150 ns


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    PDF MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, MX27C4100/4096 MX27C4096) MX27C4100) MX27C4096DC-10 MX27C4100 MX27C4096 MX27C4100DC-10 MX27C4096DC-12 MX27C4100DC10 MX27C4100DC EPROM 40PIN 27c4100 MX27C4100DC-12

    27C4100

    Abstract: 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    PDF MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) singP14 FEB/25/2000 27C4100 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q

    27C4096

    Abstract: EPROM sop 40 MX27C4096 MX27C4100 27c4100
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    PDF MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) sing13/1997 FEB/25/2000 27C4096 EPROM sop 40 MX27C4096 MX27C4100 27c4100

    Untitled

    Abstract: No abstract text available
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    PDF MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) PM0197 FEB/25/2000

    27c4100

    Abstract: No abstract text available
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    PDF MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) progr/17/1997 FEB/25/2000 27c4100

    00C2H

    Abstract: No abstract text available
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    PDF MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) PM0197 FEB/25/2000 00C2H

    5v rs232 UART interface

    Abstract: db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM RS530 xcvr 256K X 16
    Text: Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module


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    PDF Am186TMCC/CH/CU Am186 RS422 RS530 160-PQFP 5v rs232 UART interface db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM xcvr 256K X 16

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    Untitled

    Abstract: No abstract text available
    Text: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9


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    PDF V105HJ8/9 V105HJ8/9 30-lead V10SHJ8/9 V105H

    53C256

    Abstract: 53C104 V53C104
    Text: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory


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    PDF V104J8/9 V104J8/9 30-lead 53C256 53C104 V53C104

    S-1317

    Abstract: No abstract text available
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


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    PDF 28-pin 600mW IDT7187 200mV IDT7MP156 7MP156 S13-176 S-1317

    pd 3174

    Abstract: ACS35
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


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    PDF 28-pin 600mW IDT7187 IDT7MP156 200mV 7MP156 256Kx pd 3174 ACS35

    0436A8

    Abstract: No abstract text available
    Text: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations


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    PDF 85Volt IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA GA14-4662-00 0436A8

    Untitled

    Abstract: No abstract text available
    Text: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature


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    PDF V105AJ8/9 30-lead V105AJ8/9 V105A

    Untitled

    Abstract: No abstract text available
    Text: IBM0418A81QLAA IBM0418A41QLAA P relim inary IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O


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    PDF IBM0418A81QLAA IBM0418A41QLAA IBM0436A81QLAA IBM0436A41QLAA 512x18)

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 4066 cmos pin diagram of ic 4066 with pin out IDT7MB4065 7MB4066 P 4066
    Text: PRELIMINARY IDT7MB4065 IDT7MB4066 256K X 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES In te g rate d D e vice Technology» In c. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static R AM modules The ID T 7 M B 406 5/40 66a re high-speed, high density 256K


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    PDF 20/256K IDT7MB4065 IDT7MB4066 48-pin IDT7MB4065/4066are IDT7MB4065/4066 20/2S6K 7MB4065 pin diagram of ic 4066 ic tc 4066 diagram 4066 cmos pin diagram of ic 4066 with pin out 7MB4066 P 4066

    Untitled

    Abstract: No abstract text available
    Text: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations


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    PDF IBM0418A4ACLAA IBM0436A8ACLAA 0418A8ACLAA IBM0436A4ACLAA A14-4662-00

    PCMCIA Flash Memory Card 512K

    Abstract: PP-1040 ceweh
    Text: PCMCIA/JEIDA FLASH MEMORY 1. VARIATION Part Number HW B257ES* HW S513ES* HW B101ES* HW B201ES* HWB401 E S * Memory Size 256K 512K 1M 2M 4M BYTE BYTE BYTE BYTE BYTE Description 256K 256K 512K 1M 2M x x x x x 16 16 16 16 16 bit bit bit bit bit FLASH FLASH


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    PDF B257ES* S513ES* B101ES* B201ES* HWB401 GWB257 HWB513, HWB101, HWB201, HWB401 PCMCIA Flash Memory Card 512K PP-1040 ceweh