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    HD6432256WXXXTE Renesas Electronics Corporation Microcontrollers for Mobile Device Applications (Non Promotion), , / Visit Renesas Electronics Corporation
    HD6432256WXXXF Renesas Electronics Corporation Microcontrollers for Mobile Device Applications (Non Promotion), , / Visit Renesas Electronics Corporation
    HD6432256WXXXFA Renesas Electronics Corporation Microcontrollers for Mobile Device Applications (Non Promotion), , / Visit Renesas Electronics Corporation
    X93256WV14IZ-2.7T1 Renesas Electronics Corporation Dual Digitally Controlled Potentiometers (XDCPs™), TSSOP, /Reel Visit Renesas Electronics Corporation
    HD6432256WXXXFAI Renesas Electronics Corporation Microcontrollers for Mobile Device Applications (Non Promotion) Visit Renesas Electronics Corporation
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    STMicroelectronics M95256-WMN6TP

    IC EEPROM 256KBIT SPI 8SOIC
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    DigiKey M95256-WMN6TP Cut Tape 9,760 1
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    M95256-WMN6TP Digi-Reel 9,760 1
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    M95256-WMN6TP Reel 7,500 2,500
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    Avnet Americas M95256-WMN6TP Reel 15,000 8 Weeks 2,500
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    Mouser Electronics M95256-WMN6TP 27,839
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    Newark M95256-WMN6TP Cut Tape 1,523 1
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    STMicroelectronics M95256-WMN6TP 27,839 1
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    TME M95256-WMN6TP 2,734 1
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    Avnet Silica M95256-WMN6TP 315,000 9 Weeks 2,500
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    Chip-Germany GmbH M95256-WMN6TP 703
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    Chip1Stop M95256-WMN6TP Cut Tape 2,477
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    EBV Elektronik M95256-WMN6TP 190,000 9 Weeks 2,500
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    Win Source Electronics M95256-WMN6TP 59,700
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    STMicroelectronics M95256-WMN6P

    IC EEPROM 256KBIT SPI 8SOIC
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    DigiKey M95256-WMN6P Tube 8,687 1
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    Avnet Americas M95256-WMN6P Tube 7,870 8 Weeks 1
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    Mouser Electronics M95256-WMN6P 16,836
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    Newark M95256-WMN6P Bulk 2,514 1
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    Avnet Silica M95256-WMN6P 1,900 4 Weeks 100
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    Chip1Stop M95256-WMN6P Tube 1,967
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    EBV Elektronik M95256-WMN6P 55,500 26 Weeks 100
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    STMicroelectronics M95256-WDW6TP

    IC EEPROM 256KBIT SPI 8TSSOP
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    DigiKey M95256-WDW6TP Reel 4,000 4,000
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    Mouser Electronics M95256-WDW6TP 3,654
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    Newark M95256-WDW6TP Cut Tape 342 1
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    STMicroelectronics M95256-WDW6TP 2,239 1
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    Avnet Silica M95256-WDW6TP 9 Weeks 4,000
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    Chip1Stop M95256-WDW6TP Cut Tape 11,985
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    EBV Elektronik M95256-WDW6TP 8,000 9 Weeks 4,000
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    Win Source Electronics M95256-WDW6TP 64,400
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    ROHM Semiconductor BR24T256-WZ

    IC EEPROM 256KBIT I2C DIP8K
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    DigiKey BR24T256-WZ Tube 1,611 1
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    Mouser Electronics BR24T256-WZ
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    Chip1Stop BR24T256-WZ Bulk 391
    • 1 $1.47
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    CoreStaff Co Ltd BR24T256-WZ 1,980
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    Essentra Components 010256W050PC

    PAN PHILLIPS SCREW 2-56 THREAD 1
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    DigiKey 010256W050PC Bulk 1,477 1
    • 1 $0.68
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    256W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Reliability Serial EEPROMs Microwire BUS BR93□□□family BU9888FV-W No.11001EAT20 ●Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Features 1 256wordx16bits architecture 4k bit serial EEPROM 2) Operating voltage range 3.0~3.6V)


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    PDF BR93family BU9888FV-W BU9888FV-W 256word 16bits R1120A

    2NEX

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM


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    PDF BU9888FV-W BU9888FV-W 256word 16bits 2NEX

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. Features 256wordx16bits architecture 4k bit serial EEPROM Operating voltage range(3.0V to 3.6V)


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    PDF BU9888FV-W BU9888FV-W 256wordà 16bits

    Non-Volatile RAM

    Abstract: S-22H DP-018
    Text: Rev.1.1 S-22 Series PARALLEL NON-VOLATILE RAM The S-22 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable 2 memory E PROM to backup the SRAM. The organization is 256wordx4-bit (total 1K bits) for the S-22H12 and the S-22S12, and 64word×4-bit (total 256 bits) for the S-22H10 and the S-22S10.


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    PDF 256word S-22H12 S-22S12, 64word S-22H10 S-22S10. S-22H12 X2212 S-22S12 S-22H10 Non-Volatile RAM S-22H DP-018

    ADV476

    Abstract: No abstract text available
    Text: ,. DEVICES ANALOG CMOS, 80 MHzMonolithic 256Word Power-Down ColorPaletteRAM-DACs LIllI ADV4111ADV415 I I FEATURES Persona' System/Z- and VGA- Compatible 80, 88, 50 and 35 MHz PipelinedOp8rltion ADV4781ADV.71 ADV8 Pin end Functional Compatible Power.oown Mode


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    PDF 256Word ADV4111ADV415 ADV476: RS-M3AIRS-170 44-Pin ADV4781ADV On-808rd 1118E1FAU. ADV476

    P256

    Abstract: P512 BIT12 spare assignment standard
    Text: ECC Algorithm 256Word Flash Planning Group Memory Division Samsung Electronics Co., Ltd This is only example algorithm for SW ECC. In case of OneNAND which supports HW ECC, parity bit position can be changed. Product Product Planning Planning & & Application


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    PDF 256Word) 256Word 24bit) 14bit f2048P2048 P1024P1024' P2048P2048 P256 P512 BIT12 spare assignment standard

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM


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    PDF BU9888FV-W BU9888FV-W 256word 16bits

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BU9888FV-W ●General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. ●Package W(Typ.) x D(Typ.) x H(Max.) ●Features • 256wordx16bits architecture 4k bit serial EEPROM


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    PDF BU9888FV-W BU9888FV-W 256wordà 16bits

    93l46

    Abstract: 93l66 93L56 s93L46ar marking 66a S-93L46A S-93L56A S-93L66A transistor marking code sk S93L66
    Text: S-93L46A/56A/66A LOW VOLTAGE OPERATION 3-WIRE SERIAL E2PROM www.sii-ic.com Rev.6.0_00 Seiko Instruments Inc., 2004-2010 The S-93L46A/56A/66A is a low voltage operation, high speed, low current consumption, 1/2/4 K-bit 3-wire serial E2PROM with a wide operating voltage range. It is organized as 64-word x 16-bit, 128-word × 16-bit, 256word × 16-bit, respectively. Each is capable of sequential read, at which time addresses are automatically


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    PDF S-93L46A/56A/66A S-93L46A/56A/66A 64-word 16-bit, 128-word 256word 16-bit 93l46 93l66 93L56 s93L46ar marking 66a S-93L46A S-93L56A S-93L66A transistor marking code sk S93L66

    Untitled

    Abstract: No abstract text available
    Text: TLC1542C, TLC1542I, TLC1542M, TLC1542Q, TLC1543C, TLC1543I, TLC1543Q 10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS SLAS052E – MARCH 1992 – OCTOBER 1998 10-Bit Resolution A/D Converter 11 Analog Input Channels Three Built-In Self-Test Modes


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    PDF TLC1542C, TLC1542I, TLC1542M, TLC1542Q, TLC1543C, TLC1543I, TLC1543Q 10-BIT SLAS052E

    SPRU132B

    Abstract: No abstract text available
    Text: SMQ320C32 DIGITAL SIGNAL PROCESSOR SGUS027B – APRIL 1998 – REVISED MARCH 1999 D D D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C; QML Processing High-Performance Floating-Point Digital Signal Processor DSP SMQ320C32-50 (5 V)


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    PDF SMQ320C32 SGUS027B SMQ320C32-50 40-ns SMQ320C32-60 33-ns 32-Bit 40-Bit SPRU132B

    MBM10422A-5

    Abstract: MBM10474A-10 MBM100480-15 24-Pin Ceramic DIP MBM10470 MBM100422A-5 MBM10474A-5 MBM10474A MBM100422
    Text: Section 1 EC L RAM s — A t a Glance Pag« D«vto* Maximum Acoess Tim« ns Capacity Paekag« Options 1-3 MBM10422A-5 -7 5 7 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT 24- pad Ceramic LCC 1-9 MBM100422A-5 -7 5 7 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT


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    PDF MBM10422A-5 MBM100422A-5 MBM10470A-7 MBM100470A-7 MBM10470A-10 MBM100470A-10 MBM10A474-3 MBM101474A-3 MBM10474A-5 M8M100474A-5 MBM10474A-10 MBM100480-15 24-Pin Ceramic DIP MBM10470 MBM10474A MBM100422

    Untitled

    Abstract: No abstract text available
    Text: * SYNERGY 256 X 4 ECL RAM SY10422-4 SEMICONDUCTOR Fe a t u r e s • ■ Address access time, tAA :3ns max. d e s c r ip t io n The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4 bits, meets the standard 10K family signal and


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    PDF SY10422-4 SY10422 1024-bit 256words-by-4 SY10422-3DCF D24-1 F24-1 SY10422-4DCF

    cy7c122

    Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
    Text: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The CY7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro­


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    PDF CY7C122 C122-25SC CY7C122-25LC CY7C122-25DM CY7C122-35PC CY7C122-35SC CY7C122-35DC CY7C122-35LC CY7C122-35DM CY7C122-35LMB cy7c122 CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MfiE » • DS5752Ô GGBOflG11) Ô ■ AMD4 m i * A m Advanced Micro Devices 9 9 C 1 0 A 256 X 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS ■ 256word x 48-bit Content Addressable Memory (CAM) ■ - Optimized for Address Decoding in Local Area


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    PDF DS5752Ã 256word 48-bit 48-blt 48-bit 08125-009B Am99ClOA 8125-012A 8125-011A

    77261

    Abstract: LQ 425 B8 SMJ55166 SMJ55166-80 nf t47 - 221 Video RAM texas instruments 77261 smj55166-70 tsc810 ta 8268 ah
    Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1995 - REVISED JUNE 1995 HKCPACKAGE TO P VIEW • Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256W ords x 16 Bits • Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and


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    PDF SMJ55166 16-BIT SGMS057A 256Words 0Dflb027 77261 LQ 425 B8 SMJ55166-80 nf t47 - 221 Video RAM texas instruments 77261 smj55166-70 tsc810 ta 8268 ah

    28-PIN

    Abstract: No abstract text available
    Text: Section 3 Application Specific Bipolar E C L R A M s — A t a Glance Capacity Package Options 6 1024 bits 256w x 4b 24-pin Ceramic DIP, FPT 24-pad Ceramic LCC MBM100423LL-6 6 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT 24-pad Ceramic LCC 3-27 MBM10476LL-9


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    PDF MBM10423LL-6 MBM100423LL-6 MBM10476LL-9 BM10476RR-9 MBM10476RL-9 MBM100476LL-9 M8M100476RR-9 MBM100476RL-9 MBW10486LL-13 MBM10486RR-13 28-PIN

    EK-016-8905

    Abstract: RP5B02N
    Text: KOM EK-016-8905 CMOS 2k bit SRAM 256wordX8bit RP5B02N/W The RP5B02 is a 2k bit high speed CMOS static RAM organized 256 words by 8 bits and operates from a single 5 V supply. The RP5B02 has CMOS level inputs and outputs, and the outputs are 3-state output type.


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    PDF RP5B02N/W EK-016-8905 256wordX8bit) RP5B02 RP5B02N RP5B02W 24PIN 300mil EK-016-8905 RP5B02N

    Untitled

    Abstract: No abstract text available
    Text: * SYNERGY SY10422-5 SY10422-6 256 x 4 ECL RAM SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The Synergy SY10422 is a 1024-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10422 is organized as 256words-by-4-bits, meets the standard 10K family signal and


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    PDF SY10422-5 SY10422-6 SY10422 1024-bit 256words-by-4-bits, SY10422-5DCF D24-1 SY10422-5FCF

    "24 pin" DRAM

    Abstract: mb81c1501
    Text: Section 3 Application Specific DRAM s — Page Devfc« Maximum Accesa Tima na 3-3 MB81461-12 -15 120 150 A t a Glance Capacity Package Options ORAM: 262144 bits (65536W x 4b) 1016 bits (256w x 4b) 24- pin Plastic DIP, ZIP SAM : 3-35 MB81461B-12 -15 120 150


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    PDF MB81461-12 MB81461B-12 5536W 262144wx4b) 512wx4b) 262144wx 93760W 293760w "24 pin" DRAM mb81c1501

    TMS48C121-80

    Abstract: AJ10 M5M482128 tc528128
    Text: 1M 1 2 8 K X 8 m -7 ) ^ • h^ Ï ' J TC528126AP/AJ-10.-12 % TC528128AP/AJ-10,-12 / — ¿i - TMS48C121-80,-10,-12 T.I «- _ - - 126KW X 8 /256W X 8 5 V±10% X h « * X X X X X (SANUf >'<{, 7 7 r í 7') 110, 100/150, 140(max, - 100, 80, 70/120, 95, 85(max»


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    PDF 128KX8) TC528126AP/AJ-10, TC528128AP/AJ-10 TMS48C121-80 126KWX /256WX 77-ty AJ10 M5M482128 tc528128

    TMS320P17

    Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
    Text: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C


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    PDF TMS320C1X 144/256-Word TMS320E14/P14/E15/P15/E17/P17) TMS320P14/P15/P17) 64K-Word 32-Bit TMS320C10 200-ns TMS320C930) TMS320P17 d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15

    RAV 14202

    Abstract: TMS320C26
    Text: SMJ320C26 DIGITAL SIGNAL PROCESSOR 68-P IN GB PIN G R ID A R R A Y C E R A M IC P A C K A G E t TO P V IE W 100-ns Instruction Cycle Time 1568 Words of Configurable On-Chip Data/Program RAM 1 2 3 4 5 6 7 6 9 10 11 256 Words of On-Chip Program ROM 128k Words of Data/Program Space


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    PDF SMJ320C26 100-ns SMJ320C25 16-Bit 32-Bit RAV 14202 TMS320C26

    tc528126

    Abstract: TC528126B
    Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The


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    PDF TC52812GBJ/BZ 072-words 256-words TC528126BJ/BZ TC52812GB tc528126 TC528126B