am29f010
Abstract: No abstract text available
Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands
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OCR Scan
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Am29F010
32-pin
Am29F040
02S7S2A
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PDF
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Untitled
Abstract: No abstract text available
Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time
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OCR Scan
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32-Pin
28F512A
2S752Ã
0032fc
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PDF
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29F080
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements
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OCR Scan
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Am29F080
44-pin
02S752Ã
a0337bl
29F080
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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OCR Scan
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48-pin
Am29F016
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PDF
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EE-21
Abstract: 28F010P
Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current
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OCR Scan
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Am28F010
32-Pin
D55752fl
D3273D
EE-21
28F010P
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PDF
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Am29F010
Abstract: G033573
Text: FINAL a A m 2 9 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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OCR Scan
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32-pin
Am29F010
G033573
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD* Am29LV400T/Am29LV400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements
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OCR Scan
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Am29LV400T/Am29LV400B
8-Bit/262
16-Bit)
48-pin
44-Pin
16-038-S044-2
25752A
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PDF
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Untitled
Abstract: No abstract text available
Text: FIN A L Am29F200T/Am29F200B AtlvaM n“ o 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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OCR Scan
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
44-pin
48-pin
29F200
29F200T/Am29F200B
25752fl
0Q33bb4
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PDF
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Untitled
Abstract: No abstract text available
Text: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption
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OCR Scan
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Am28F512
32-Pin
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PDF
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OA79
Abstract: AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 AM27C040 h4t diode smd pinout AM2 AMD
Text: FINAL il Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns — Typical programming time of 1 minute ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to
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OCR Scan
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Am27C040
28-pin
32-pin
Am27C040ign
8M-7/94-0
14971D
0257S2Ã
32S73
OA79
AMD am2 socket pinout
amd AM2 pinout
amd socket 940 pinout
AMD socket AM2 pinout
BXA 4250
5607
h4t diode smd
pinout AM2 AMD
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PDF
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3251b
Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands
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OCR Scan
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Am29F040
32-pin
3251b
29F040
3251L
AM29F040-75JC
AM29F040A
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PDF
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DG33 transistor
Abstract: No abstract text available
Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time
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OCR Scan
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32-Pin
Am28F512A
DG33 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 27C 1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Fiashrite programming ■ Fast access time — Typical programming time of 8 seconds — 70 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption
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OCR Scan
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16-Bit)
40-Pin
44-Pin
Am27C1024
KS000010
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY a A m 2 9 F 1 0 0 T /A m 2 9 F 1 OOB 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ±1 0 % write and erase, read — Minimizes system level power requirements
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OCR Scan
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8-Bit/65
16-Bit)
44-pin
48-pin
CP-10
3M-8/94-0
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PDF
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OA95
Abstract: mee7
Text: a Advanced Micro Devices A m 28F 01 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access tim e ■ CMOS low power consum ption ■ — 30 mA maximum active current
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OCR Scan
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Am28F01
32-Pin
Am28F010A
3402b
OA95
mee7
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PDF
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