Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    25A IGBT Search Results

    25A IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    25A IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]


    Original
    SSC800-25 SSC1000-25 SSC800-25-24 PDF

    SSC1000-25

    Abstract: SSC800-25
    Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]


    Original
    SSC800-25 SSC1000-25 SSC800-25-24 SSC1000-25 SSC800-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]


    Original
    SSC800-25 SSC1000-25 PDF

    SSC1000-25

    Abstract: SSC800-25
    Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]


    Original
    SSC800-25 SSC1000-25 SSC800-25-24 SSC1000-25 SSC800-25 PDF

    SSC800-25

    Abstract: No abstract text available
    Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mArms]


    Original
    SSC800-25 SSC1000-25 SSC800-25-24 SSC800-25 PDF

    bridge rectifier 25a

    Abstract: 9883
    Text: GBI 25A . GBI 25M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 25A . GBI 25M Publish Data Features


    Original
    PDF

    smps 5kw

    Abstract: LIN opto isolator VCVS 1 phase inverter using igbt 50V 5A SCHEMATIC servo dc IGBTS SCHEMATIC POWER SUPPLY WITH IGBTS F240 transistor SCHEMATIC servo IGBTS IR2213 schematic diagram ac-dc inverter
    Text: PIIPM25P12B008 Advance Data PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient


    Original
    PIIPM25P12B008 28Vtyp 76Vtyp 50ppm/ 15Vdc 300mA smps 5kw LIN opto isolator VCVS 1 phase inverter using igbt 50V 5A SCHEMATIC servo dc IGBTS SCHEMATIC POWER SUPPLY WITH IGBTS F240 transistor SCHEMATIC servo IGBTS IR2213 schematic diagram ac-dc inverter PDF

    SCHEMATIC servo dc IGBTS

    Abstract: power amplifier absolute AD 2400 SCHEMATIC SCHEMATIC servo IGBTS PIIPM25P12B008 opto isolator rs422 smps 5kw 100C TMS320LF2406A VTH100C SCHEMATIC 12V 5A smps
    Text: Bulletin I27147 06/03 PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient


    Original
    I27147 PIIPM25P12B008 28Vtyp 76Vtyp 50ppm/ 15Vdc 300mA PIIPM25P12B008 SCHEMATIC servo dc IGBTS power amplifier absolute AD 2400 SCHEMATIC SCHEMATIC servo IGBTS opto isolator rs422 smps 5kw 100C TMS320LF2406A VTH100C SCHEMATIC 12V 5A smps PDF

    100C

    Abstract: EMP25P12B shunt resistor current motor
    Text: Bulletin I27149 01/03 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology


    Original
    I27149 EMP25P12B 28Vtyp 76Vtyp 50ppm/ EMP25P12B 100C shunt resistor current motor PDF

    IGBT Transistor 1200V, 25A

    Abstract: schematic e.m.p 100C EMP25P12B
    Text: EMP25P12B Advance Data EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology


    Original
    EMP25P12B 28Vtyp 76Vtyp 50ppm/ EMP25P12B IGBT Transistor 1200V, 25A schematic e.m.p 100C PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V


    Original
    FGH25N120FTDS FGH25N120FTDS PDF

    SCHEMATIC servo IGBTS

    Abstract: SCHEMATIC servo dc IGBTS smps 5kw schematic diagram ac-dc inverter 1 phase inverter using igbt 50V 5A datasheet IR2213 power amplifier absolute AD 3600 SCHEMATIC 3 phase inverter schematic diagram SCHEMATIC POWER SUPPLY WITH IGBTS 1000 BASE Isolation Modules 5kV
    Text: Bulletin I27147 02 - Oct PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient


    Original
    I27147 PIIPM25P12B008 28Vtyp 76Vtyp 50ppm/ 15Vdc 300mA PIIPM25P12B008 SCHEMATIC servo IGBTS SCHEMATIC servo dc IGBTS smps 5kw schematic diagram ac-dc inverter 1 phase inverter using igbt 50V 5A datasheet IR2213 power amplifier absolute AD 3600 SCHEMATIC 3 phase inverter schematic diagram SCHEMATIC POWER SUPPLY WITH IGBTS 1000 BASE Isolation Modules 5kV PDF

    100C

    Abstract: EMP25P12B ECONOPACK
    Text: Bulletin I27149 08/07 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology


    Original
    I27149 EMP25P12B 28Vtyp 76Vtyp 50ppm/ EMP25P12B 100C ECONOPACK PDF

    IR2213 application note

    Abstract: ir2213 1200V25A schematic diagram motor control PIIPM25P12B008
    Text: Bulletin I27147 01/03 PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient


    Original
    I27147 PIIPM25P12B008 28Vtyp 76Vtyp 50ppm/ 15Vdc PIIPM25P12B008 IR2213 application note ir2213 1200V25A schematic diagram motor control PDF

    RGT50TS65D

    Abstract: No abstract text available
    Text: RGT50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.65V PD 174W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


    Original
    RGT50TS65D O-247 R1102A RGT50TS65D PDF

    Untitled

    Abstract: No abstract text available
    Text: RGT50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.65V PD 174W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


    Original
    RGT50TS65D O-247N R1102A PDF

    RGTH50TS65D

    Abstract: No abstract text available
    Text: RGTH50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original
    RGTH50TS65D O-247 RGTH50TS65Dth R1102A RGTH50TS65D PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original
    RGTH50TS65 O-247N R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop IGBT3 Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Q3 11 • Solar converter


    Original
    APTGV25H120T3G PDF

    Untitled

    Abstract: No abstract text available
    Text: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter


    Original
    APTGV25H120T3G PDF

    RGTH50TS65

    Abstract: No abstract text available
    Text: RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


    Original
    RGTH50TS65 O-247 R1102A RGTH50TS65 PDF

    igbt 25A toshiba

    Abstract: TOSHIBA IGBT 25A
    Text: MG25J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance tf —1.0 "S Max. (Iq = 25A) High Speed Low Saturation Voltage : V 0 E(sat) = 2.7V (Max.) (Ic = 25A)


    OCR Scan
    MG25J1BS11 igbt 25A toshiba TOSHIBA IGBT 25A PDF

    MG25J1BS11

    Abstract: No abstract text available
    Text: TOSHIBA MG25J1BS11 TOSHIBA GTR MODULE SILICON N - CHANNEL IGBT MG25J1BS11 U nit in HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0,us M ax. (lQ = 25A) Low Saturation Voltage : VcE(sat) = 2-7V (Max.) (Ic = 25A)


    OCR Scan
    MG25J1BS11 MG25J1BS11 PDF

    MG25J1BS11

    Abstract: tcp 8005
    Text: MG25J1BS11 TOSHIBA MG25J1BS11 TOSHIBA GTR MODULE SILICON N -C H A N N EL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 25A) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 25A)


    OCR Scan
    MG25J1BS11 2-33F1A 100il MG25J1BS11 tcp 8005 PDF