1888655-1
Abstract: 6116317-1
Text: 107-68094 Packaging Specification 25Feb10 Rev M STACKED MOD JK ASSY, 2X8, 8 POSN 1. PURPOSE 目的 Define the packaging specifiction and packaging method of STACKED MOD JK ASSY, 2X8, 8 POSN product. 订定 STACKED MOD JK ASSY, 2X8, 8 POSN 产品之包装规格及包装方式。
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25Feb10
QR-ME-030B
1888655-1
6116317-1
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1116526-1
Abstract: 555780 5558310-1 558342-1 5406491-X CAT-5 406285-X tyco 5557560-1
Text: 107-68025 Packaging Specification 25Feb10 Rev AB MODULAR TELEPHONE JACK 1. PURPOSE 目的 Define the packaging specification and packaging method of MODULAR TELEPHONE JACK products. 订定 MODULAR TELEPHONE JACK 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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25Feb10
X-5406206-X
X-406206-X
X-5406203-X
X-406203-X
X-5406299-X
X-406299-X
48TUBE86(
QR-ME-030B
1116526-1
555780
5558310-1
558342-1
5406491-X
CAT-5
406285-X
tyco 5557560-1
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sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-1010
sharp laser diodes
TSOP855
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17024
Abstract: AN609 IRF510S
Text: IRF510S_RC, SiHF510S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF510S
SiHF510S
AN609,
25-Feb-10
17024
AN609
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Si4178DY
Abstract: 7313 AN609
Text: Si4178DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4178DY
AN609,
25-Feb-10
7313
AN609
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transistor 6822
Abstract: 6822 mosfet 4800 transistors 6822 6822 transistor 731 MOSFET 4800 mosfet AN609 38734
Text: SiZ710DT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiZ710DT
AN609,
25-Feb-10
transistor 6822
6822
mosfet 4800
transistors 6822
6822 transistor
731 MOSFET
4800 mosfet
AN609
38734
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AN609
Abstract: IRF520 SiHF520
Text: IRF520_RC, SiHF520_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF520
SiHF520
AN609,
25-Feb-10
AN609
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TSOP35D25
Abstract: TSAL6200
Text: TSOP35D25 Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm
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TSOP35D25
18-Jul-08
TSOP35D25
TSAL6200
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Untitled
Abstract: No abstract text available
Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride
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11-Mar-11
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AN609
Abstract: IRF510 IRF510R
Text: IRF510_RC, SiHF510_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF510
SiHF510
AN609,
25-Feb-10
AN609
IRF510R
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DIODE 0536
Abstract: HEXFRED DIODE GB05XP120KTPBF NC301
Text: GB05XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB05XP120KTPbF
E78996
2002/95/EC
18-Jul-08
DIODE 0536
HEXFRED DIODE
GB05XP120KTPBF
NC301
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SEM32G
Abstract: sandisk eMMC 4.41 emmc 4.41 spec JESD84-A441 eMMC 4.41 SEM04G emmc pcb layout SEM08G 153 ball eMMC memory sandisk 32GB Nand flash
Text: e.MMC 4.41 I/F Preliminary Data Sheet 80-36-03433 February 2010 SanDisk Corporation Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035 Phone 408 801-1000 • Fax (408) 801-8657 www.sandisk.com 80-36-03433 SanDisk iNAND e.MMC 4.41 I/F - Data Sheet
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SEM32G
sandisk eMMC 4.41
emmc 4.41 spec
JESD84-A441
eMMC 4.41
SEM04G
emmc pcb layout
SEM08G
153 ball eMMC memory
sandisk 32GB Nand flash
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NC-AA
Abstract: NCEE10
Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride
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18-Jul-08
NC-AA
NCEE10
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AN609
Abstract: IRF520S SiHF520S
Text: IRF520S_RC, SiHF520S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF520S
SiHF520S
AN609,
25-Feb-10
AN609
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Untitled
Abstract: No abstract text available
Text: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT J RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D IS T LOC ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S LTR C2 DESCRIPTION REVISED EC R — 1 0 —0 0 4 0 3 6 DATE DWN APVD 25FEB10 TS KB D D -1 8 + 0 . 5 5.4 + 0 . 512.1+0.2-
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25FEB10
14MAR07
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Untitled
Abstract: No abstract text available
Text: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST J R E V IS IO N S LTR C1 DESCRIPTION REVISED EC R — 10 —0 0 4 0 3 6 DATE DWN APVD 25FEB10 TS KB D D 36.5 + 0 . 5 -
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25FEB10
20JAN05
2QJAN05
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ASTM B 545
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L REVISIO N S RIGHTS R E S E R VE D . G C O R P O R A T IO N . o: LTR A1 D E S C R IP T IO N REV PER
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25FEB10
B-152
B-545
ASTM B 545
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