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    26JUL10 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SM8A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability


    Original
    SM8A27 ISO7637-2 DO-218AB J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching


    Original
    IRFZ20, SiHFZ20 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: WSL Vishay Dale Power Metal Strip Resistors, Low Value down to 0.001 Ω , Surface Mount FEATURES • Ideal for all types of current sensing, voltage division and pulse applications including switching and linear power supplies, instruments, power amplifiers


    Original
    2002/95/EC 18-Jul-08 PDF

    SMA0207S

    Abstract: No abstract text available
    Text: MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Vishay Beyschlag Precision Thin Film Leaded Resistors FEATURES • • • • • • • • Approved according to EN 140101-806 Advanced thin film technology Low TCR: ± 15 ppm/K to ± 25 ppm/K Precision tolerance of value:


    Original
    2002/95/EC 11-Mar-11 SMA0207S PDF

    IRFZ20PBF

    Abstract: SiHFZ20 IRFZ20
    Text: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching


    Original
    IRFZ20, SiHFZ20 2002/95/EC O-220AB 18-Jul-08 IRFZ20PBF IRFZ20 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . WSL0 6 0 3.18 KEY BENEFITS • 0.2 W rating is double the power capacity of the standard WSL0603 type resistor • Resistance range of 0.01 W to 0.1 W • Low TCR: ± 75 ppm/°C • High-temperature capacity: 170 °C


    Original
    WSL0603 VMN-PT0094-1008 PDF

    IRFZ20

    Abstract: SiHFZ20
    Text: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching


    Original
    IRFZ20, SiHFZ20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFZ20 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching


    Original
    IRFZ20, SiHFZ20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sihg47n60s-e3

    Abstract: power MOSFET INVERTER
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 47 A, 600 V, RDS on max. = 70 mW at VGS = 10 V • Low gate charge: Qg max. = 216 nC


    Original
    SiHG47N 2002/95/EC SiHG47N60S VMN-PT0239-1010 sihg47n60s-e3 power MOSFET INVERTER PDF

    DO218AB

    Abstract: DO-218AB SM5A27 ISO7637-2 J-STD-002
    Text: SM5A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability


    Original
    SM5A27 ISO7637-2 J-STD-020, DO-218AB AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 DO218AB DO-218AB SM5A27 J-STD-002 PDF

    SiHFZ20

    Abstract: irfz20pbf
    Text: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching


    Original
    IRFZ20, SiHFZ20 2002/95/EC O-220AB 11-Mar-11 irfz20pbf PDF

    MKP 10

    Abstract: No abstract text available
    Text: MKP 339T X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type l l w h FEATURES w • 7.5 mm to 27.5 mm lead pitch • Supplied loose in box, taped: ammopack or reel • Compliant to RoHS directive 2002/95/EC h h' F' lt P 1


    Original
    2002/95/EC 55/125/56/B 18-Jul-08 MKP 10 PDF

    MBB0207V

    Abstract: SMA0207S DIN EN 60286-1 SMA02040 MBB 0207 beyschlag mbb0207vd
    Text: MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Vishay Beyschlag Precision Thin Film Leaded Resistors FEATURES • • • • • • • • Approved according to EN 140101-806 Advanced thin film technology Low TCR: ± 15 ppm/K to ± 25 ppm/K Precision tolerance of value:


    Original
    2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MBB0207V SMA0207S DIN EN 60286-1 SMA02040 MBB 0207 beyschlag mbb0207vd PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching


    Original
    IRFZ20, SiHFZ20 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Vishay 0414 resistor

    Abstract: RESISTOR AXIAL 0207 sma resistor MBB0207 51R1 E192 MBA0204 MBE0414 140101 DIN EN 60115-1 CLAUSE 4.8
    Text: MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Vishay Beyschlag Precision Thin Film Leaded Resistors FEATURES • • • • • • • • Approved according to EN 140101-806 Advanced thin film technology Low TCR: ± 15 ppm/K to ± 25 ppm/K Precision tolerance of value:


    Original
    2002/95/EC 18-Jul-08 Vishay 0414 resistor RESISTOR AXIAL 0207 sma resistor MBB0207 51R1 E192 MBA0204 MBE0414 140101 DIN EN 60115-1 CLAUSE 4.8 PDF

    SM6A27 DO-218AB

    Abstract: No abstract text available
    Text: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability


    Original
    SM6A27 ISO7637-2 DO-218AB J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 SM6A27 DO-218AB PDF

    Untitled

    Abstract: No abstract text available
    Text: 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • The fully isolated package VINS = 2500 VRMS Base cathode 2 is UL E78996 approved • Designed and qualified for industrial level APPLICATIONS


    Original
    20ETF10FPPbF, 20ETF12FPPbF E78996 O-220AC 20ETF. 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • The fully isolated package VINS = 2500 VRMS Base cathode 2 is UL E78996 approved • Designed and qualified for industrial level APPLICATIONS


    Original
    20ETF10FPPbF, 20ETF12FPPbF E78996 O-220AC 20ETF. 11-Mar-11 PDF

    20ETF

    Abstract: 20ETF10FP
    Text: 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • The fully isolated package VINS = 2500 VRMS Base cathode 2 is UL E78996 approved • Designed and qualified for industrial level APPLICATIONS


    Original
    20ETF10FPPbF, 20ETF12FPPbF E78996 O-220AC 20ETF. 18-Jul-08 20ETF 20ETF10FP PDF

    TO220 HEATSINK

    Abstract: 20ETF 20ETF10FP
    Text: 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • The fully isolated package VINS = 2500 VRMS Base cathode 2 is UL E78996 approved • Designed and qualified for industrial level APPLICATIONS


    Original
    20ETF10FPPbF, 20ETF12FPPbF E78996 O-220AC 20ETF. 11-Mar-11 TO220 HEATSINK 20ETF 20ETF10FP PDF

    DIN EN 60286-1

    Abstract: No abstract text available
    Text: MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Precision Vishay Beyschlag Precision Thin Film Leaded Resistors FEATURES • • • • • • • • Approved according to EN 140101-806 Advanced thin film technology Low TCR: ± 15 ppm/K to ± 25 ppm/K Precision tolerance of value:


    Original
    2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 DIN EN 60286-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: WSL.18 High Power Vishay Dale Power Metal Strip Resistors, High Power 2 x Standard WSL , Low Value (down to 0.001 Ω), Surface Mount FEATURES • Ideal for all types of current sensing, voltage division and pulse applications including switching and linear


    Original
    18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T D BY ^ C O E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L REVISIO N S RIGHTS R E S E R VE D . C O R P O R A T IO N . LTR MATERIAL: HOUSING: THERMOPLASTIC, U L94V - 0, BLACK.


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