ixf26n50q
Abstract: 24N50 26N50Q 125OC ixf26N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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24N50Q
26N50Q
125OC
728B1
ixf26n50q
24N50
26N50Q
125OC
ixf26N50
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24N50
Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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26N50
ISOPLUS247TM
24N50
247TM
IXFR26N50
IXFR24N50
IXFH26N50
24N50
26N50
.24n50
IXFR24N50
IXFR26N50
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PDF
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26N50
Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
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ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
26N50
IXFC 26N50
24N50
ixfc26n50
.26n50
.24n50
IXFC24N50
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode
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26N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FPDK 26N5103/S14 Retro-reflective sensors dimension drawing 58 40 Pot LED 5,5 80 62 * 38 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type retro-reflective sensor light source pulsed red LED actual range Sb 12 m
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26N5103/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data type photo background suppression light source pulsed infrared diode
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26N5001/S14
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ixfh26n50q
Abstract: 26N50 IXFC 26N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS220TM
26N50Q
24N50Q
220TM
26N50
24N50
ixfh26n50q
IXFC 26N50
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26n50
Abstract: IXFH .26n50 PLUS220SMD
Text: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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26N50P
26N50PS
26n50
IXFH
.26n50
PLUS220SMD
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PLUS220SMD
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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26N50P
26N50PS
O-247)
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 13 8 8 M12 x 1 24,3 * emitter axis general data photo type background suppression light source pulsed infrared diode
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26N5001/S14
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26N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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26N50
ISOPLUS247TM
24N50
24N50
IXFR26N50
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ixf26N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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24N50Q
26N50Q
O-240
125OC
728B1
ixf26N50
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26n50
Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol
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ISOPLUS220TM
26N50
24N50
220TM
IXFC26N50
IXFC24N50
IXFH26N50
26n50
.24n50
24n50
ixfc26n50
IXFC24N50
W26-1
Ixfc 26n50
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FPDK 26N5103/S14 Retro-reflective sensors dimension drawing 58 40 Pot LED 5,5 80 62 * 38 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type retro-reflective sensor light source pulsed red LED actual range Sb 12 m
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26N5103/S14
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFH 26N55Q IXFT 26N55Q HiPerFETTM Power MOSFETs Q-Class VDSS = 550 V = 26 A ID25 RDS on = 0.23 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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26N55Q
O-247
dv/dt610
O-268
728B1
123B1
728B1
065B1
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PDF
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDK 26N5001/S14 Diffuse sensors with background suppression dimension drawing 58 40 Pot LED 5,5 80 62 * 13 5,5 25,2 5,5 M12 x 1 24,3 13 8 8 * emitter axis general data photo type background suppression light source pulsed infrared diode
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26N5001/S14
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PDF
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26N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
26N50
24N50
24N50
IXFR26N50
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26N50
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS220TM
26N50Q
24N50Q
26N50
24N50
24N50
IXFC26N50Q
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PDF
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26N50Q
Abstract: IXFH26N50Q 24N50Q
Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol
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ISOPLUS247TM
26N50Q
24N50Q
24N50Q
IXFR26N50Q
IXFH26N50Q
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PDF
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26N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class VDSS ID25 RDS on = 500 V = 26 A = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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O-247
O-268
26N50Q
26N50Q
O-24eristic
125OC
26N50
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26N48
Abstract: 640S
Text: D.C. Motor 5,7 Watt 26N58 & 26N48 Precious metal commutation system - 9 segments scale : 3:4 dimensions in mm mass : 114 g 26N58 •1 26N48 Winding types Measured values 1 Measuring voltage 2 No-load speed 3 Stall torque 4 Average no-load current 5 Typical starting voltage
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26N58
26N48
-216P
-113P
-216E
28ody
26N48
640S
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS
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26N50P
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24n50
Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250
Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family
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ISOPLUS247â
26N50Q
24N50Q
26N50
24N50
IXFR26N50Q
IXFH26N50Q
A24N50
.24n50
ISOPLUS247
IXFR24N50Q
SST250
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26N80Q
Abstract: 26N80
Text: dIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class Symbol Test Conditions Maximum Ratings VDSS Td = 25° C to 150° C 500 V Voon Tj = 25° C to 150°C; RGS= 1 MQ 500 V Vos Continuous ±20 V Transient ±30 V osm '* 5
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26N50Q
26N50Q
UL94V-0
10TransientThermal
26N80Q
26N80
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