26n50
Abstract: IXFH .26n50 PLUS220SMD
Text: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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26N50P
26N50PS
26n50
IXFH
.26n50
PLUS220SMD
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PLUS220SMD
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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26N50P
26N50PS
O-247)
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr IXFH 26N50P IXFV 26N50P IXFV 26N50PS N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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26N50P
26N50PS
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IXTQ26N50P
Abstract: PLUS220SMD 26n50ps b5237
Text: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = 500 V = 26 A ≤ 230 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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26N50P
26N50PS
15noCoulombs
26N50P
IXTQ26N50P
PLUS220SMD
26n50ps
b5237
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26N50P
Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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26N50P
26N50PS
26N50P
IXTV26N50PS
O-268
IXTQ26N50P
ixtq-26n50p
IXTQ 26N50P
IXTV26N50PS
PLUS220SMD
ixtt26n50p
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Untitled
Abstract: No abstract text available
Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR
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26N50P
26N50PS
PLUS220
26N50P
IXTV26N50PS
O-268
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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