Untitled
Abstract: No abstract text available
Text: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm
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TGA4525-SM
17GHz
27GHz
760mA
830mA
TGA4525-SM
29dBm
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fet p40
Abstract: "Up Converter" p25 smd AN0017 Anaren Microwave 11305 P40 fet
Text: MFC-PO15181-QEG RoHS COMPLIANT 17-27GHz Up Converter GaAs Monolithic Microwave IC in SMD package Description The P015181-QEG is a I/Q up converter, which integrates a balanced cold FET mixer, and a time two multiplier. It is designed for a wide range of applications,
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MFC-PO15181-QEG
17-27GHz
P015181-QEG
17-27GHz
24dBm
24LQFN4x5
DSMFC-PO15181-QEG8326
fet p40
"Up Converter"
p25 smd
AN0017
Anaren Microwave 11305
P40 fet
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PDF
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CD 51 rf detector
Abstract: CHE1260
Text: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted and
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CHE1260
10-27GHz
CHE1260
DSCHE1260-8058
CD 51 rf detector
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PDF
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AN0017
Abstract: CHA5056-QGG
Text: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
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CHA5056-QGG
17-27GHz
CHA5056-QGG
17-27GHz
38dBm
890mA
28LQFN5x5
DSCHA5056QGG7033
AN0017
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PDF
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TGA4525-SM
Abstract: No abstract text available
Text: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm
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TGA4525-SM
17GHz
27GHz
760mA
830mA
TGA4525-SM
29dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm
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AMMP-6430
AMMP-6430
27GHz
34GHz.
30GHz,
29dBm
AV02-0623EN
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PDF
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Untitled
Abstract: No abstract text available
Text: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm
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AMMP-6430
AMMP-6430
27GHz
34GHz.
30GHz,
29dBm
AV02-0623EN
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PDF
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Untitled
Abstract: No abstract text available
Text: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm
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AMMP-6430
AMMP-6430
27GHz
34GHz.
30GHz,
29dBm
AV02-0623EN
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PDF
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fujitsu power amplifier GHz
Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
FUJITSU SEMICONDUCTOR phemt
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PDF
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Untitled
Abstract: No abstract text available
Text: Broadband Microwave Coaxial Noise Sources NST26L-B 100MHz to 27GHz Specifications RF Frequency Noise Output Noise Spectral Density No VSWR Peak Factor Bias Voltage Impedance 100MHz to 27GHz 13 - 17 dBENR -159dBm/Hz 1.6:1 5:01 15 V 50 ohms Package and Connectivity
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NST26L-B
100MHz
27GHz
-159dBm/Hz
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PDF
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Untitled
Abstract: No abstract text available
Text: Broadband Microwave Coaxial Noise Sources NST26-A 100MHz to 27GHz Specifications RF Frequency Noise Output Noise Spectral Density No Peak Factor Bias Voltage Impedance 100MHz to 27GHz 24 dBENR -149dBm/Hz 5:01 28 V 50 ohms Package and Connectivity Construction
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NST26-A
100MHz
27GHz
-149dBm/Hz
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AMMP-6430
Abstract: 18E DBM A004R 52719
Text: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm
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AMMP-6430
AMMP-6430
27GHz
34GHz.
30GHz,
29dBm
AV02-0623EN
18E DBM
A004R
52719
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PDF
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Untitled
Abstract: No abstract text available
Text: CHR3764-QEG RoHS COMPLIANT 21-27GHz Down-Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR3764-QEG is a multifunction monolithic circuit, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control.
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CHR3764-QEG
21-27GHz
CHR3764-QEG
R3764
DSCHR3764-QEG1263
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PDF
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TGA4525-SM
Abstract: No abstract text available
Text: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm
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TGA4525-SM
17GHz
27GHz
760mA
830mA
TGA4525-SM
29dBm
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PDF
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R3664
Abstract: AN0017
Text: CHR3664-QEG RoHS COMPLIANT 17-27GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package Description The CHR3664-QEG is a multifunction part, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control. It is designed for a wide range
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CHR3664-QEG
17-27GHz
CHR3664-QEG
R3664
17-27GHz
15dBc
24LQFN4x5
DSCHR3664-QEG0097-
R3664
AN0017
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PDF
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fujitsu power amplifier GHz
Abstract: UM 2200 power amplifier mmic
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
UM 2200
power amplifier mmic
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PDF
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Untitled
Abstract: No abstract text available
Text: Broadband Microwave Coaxial Noise Sources NST26L-A 100MHz to 27GHz Specifications RF Frequency Noise Output Noise Spectral Density No VSWR Peak Factor Bias Voltage Impedance 100MHz to 27GHz 13 - 17 dBENR -159dBm/Hz 1.6:1 5:01 28 V 50 ohms Package and Connectivity
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NST26L-A
100MHz
27GHz
-159dBm/Hz
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PDF
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NST26-B
Abstract: No abstract text available
Text: Broadband Microwave Coaxial Noise Sources NST26-B 100MHz to 27GHz Specifications RF Frequency Noise Output Noise Spectral Density No Peak Factor Bias Voltage Impedance 100MHz to 27GHz 24 dBENR -149dBm/Hz 5:01 15 V 50 ohms Package and Connectivity Construction
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NST26-B
100MHz
27GHz
-149dBm/Hz
NST26-B
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PDF
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Untitled
Abstract: No abstract text available
Text: AMMP-6430 27-34 GHz, 0.5W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6430 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 27GHz and 34GHz. At 30GHz, it provides 29dBm
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Original
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AMMP-6430
AMMP-6430
27GHz
34GHz.
30GHz,
29dBm
AMMP-6430-BLKG
AMMP-6430-TR1G
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PDF
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Untitled
Abstract: No abstract text available
Text: CHA2260-QAG 18-27GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased. It is designed for a wide range of applications, from military to commercial
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CHA2260-QAG
18-27GHz
CHA2260-QAG
A2260
18-27GHz
13dBm
23dBm
16L-QFN3x3
DSCHA2260-QAG3150
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PDF
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CHA5056
Abstract: No abstract text available
Text: CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd3 Vd2 Vd1 The CHA5056 is three-stage monolithic high power amplifier. RFout RFin The backside of the chip is both RF and DC grounds. This helps to simplify the assembly
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CHA5056
17-27GHz
CHA5056
17-27GHz
29dBm
940mA
DSCHA50567211
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PDF
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Untitled
Abstract: No abstract text available
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 30dBm Typ. • High Gain: G1dB = 14dB (Typ.) • High PAE: ηadd = 20% (Typ.) • Wide Frequency Band: 21-27 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
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PDF
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SAS 251
Abstract: AN0017 CHE1260-QAG E1260 96272-B
Text: CHE1260-QAG RoHS COMPLIANT 12-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1260 YYWW The CHE1260-QAG is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detector
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CHE1260-QAG
12-27GHz
E1260
CHE1260-QAG
DSCHE1260-QAG8163
SAS 251
AN0017
E1260
96272-B
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PDF
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CHA5056
Abstract: No abstract text available
Text: CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd3 Vd2 Vd1 The CHA5056 is three-stage monolithic high power amplifier. RFout RFin The backside of the chip is both RF and DC grounds. This helps to simplify the assembly
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Original
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CHA5056
17-27GHz
CHA5056
17-27GHz
29dBm
940mA
DSCHA50567211
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PDF
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