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    IBM0144001M

    Abstract: IBM014400B1M IBM014400M1M IBM014400P1M
    Text: IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V. IBM014400 IBM014400M IBM014400B IBM014400P 1M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation


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    PDF IBM0144001M IBM014400P1M IBM014400M1M IBM014400B1M IBM014400 IBM014400M IBM014400B IBM014400P

    fast page mode dram controller

    Abstract: IBM0144001M IBM014400B1M IBM014400M1M IBM014400P1M
    Text: IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V. IBM014400 IBM014400M IBM014400B IBM014400P 1M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation


    Original
    PDF IBM0144001M IBM014400P1M IBM014400M1M IBM014400B1M IBM014400 IBM014400M IBM014400B IBM014400P fast page mode dram controller

    014400m

    Abstract: No abstract text available
    Text: IBM014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max)


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    PDF IBM014400M IBM014400P Rate/128m 110ns 130ns J-26/20 300mil) 014400M 014400P

    Untitled

    Abstract: No abstract text available
    Text: IBM014400 IBM014400M IBM014400B IBM014400P 1 M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation - Active max - 85 mA / 70 mA (5.0V) - 95 mA / 80 mA (3.3V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 m A(LP version)


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    PDF IBM014400 IBM014400M IBM014400B IBM014400P 27H4339

    Untitled

    Abstract: No abstract text available
    Text: IBM014400 IBM014400M IBM014400B IBM014400P 1M X 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization Power Dissipation - Active max • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V - 85 mA / 70 mA (5.0V ) - 95 mA / 80 mA (3.3V) - Standby Current: T TL Inputs (max)


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    PDF IBM014400 IBM014400M IBM014400B IBM014400P 110ns 130ns Fa00mil;

    Untitled

    Abstract: No abstract text available
    Text: IBM014400 IBM014400M IBM014400B IBM014400P 1 M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation - Active max - 85 mA / 70 mA (5.0V) - 95 mA / 80 mA (3.3V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (LP version)


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    PDF IBM014400 IBM014400M IBM014400B IBM014400P 27H4339 SA14-4219-03