Untitled
Abstract: No abstract text available
Text: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)
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KM611001/L
KM611001/L
KM611001P/LP
28-DIP-400
KM611001J/LJ
28-SOJ-400A
576-bit
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KM641001
Abstract: No abstract text available
Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words
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KM641001
256Kx
KM641001
576-bit
KM641001-20
KM641001-25:
130mA
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KM641001
Abstract: No abstract text available
Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)
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KM641001
KM641001
130mA
KM641001-35:
110mA
KM641001P
28-DIP-400
KM641001J
28-SQJ-400
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KM641001
Abstract: KM641001-25 km641001j KM641001-35 741-145
Text: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)
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KM641001
KM641001
150mA
KM641001-25
130mA
KM641001-35
110mA
KM641001P
28-DIP-400
KM641001J
km641001j
741-145
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)
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PDF
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KM641001
KM641001
576-bit
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20,25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) :2mA (max) Operating : KM641001-20 : 150mA (max.) KM641001-25: 130mA (max.)
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KM641001
KM641001-20
150mA
KM641001-25:
130mA
KM641001-35:
110mA
KM641001P
28-DIP-400
KM641001J
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KM641001
Abstract: No abstract text available
Text: KM641001 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access M em ory organized as 262,144 words Standby (TTL)
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PDF
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KM641001
KM641001P:
28-DIP-400
KM641001J:
28-SOJ-4QOB
KM641001
576-bit
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Untitled
Abstract: No abstract text available
Text: KM641001/L CMOSSRAM 256K X 4 Bit with OE High-Speed CMOS Static RAM FEATURES Fast Access Time 20,25,35ns(Max.) Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) 0.5mA(Max.) - L-Ver. only Operating KM641001/L - 20 : 150mA(Max.) KM641001/L - 25 : 130mA(Max.)
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KM641001/L
KM641001/L
150mA
130mA
110mA
KM641001/LP
28-DIP-400
KM641001/LJ
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KM641001-20
Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144
Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation
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PDF
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KM641001
256Kx
KM641001-20
KM641001-25
KM641001-35
KM641001P:
28-DIP-400
KM641001
28-SOJ-400B
KM641001-20
KM641001-25
TAE 1102
KM641001-35
KM641001P
d02144
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Untitled
Abstract: No abstract text available
Text: KM681001/L CMOSSRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast A ccess Tim e 20 ,25,35 ns M a x. Low P ow er D issipation S tan dby (TTL) : 40m A (M ax.) (C M O S) : 2m A (M ax.) 0.5 m A (M a x.) - L-Ver. only O pe ra ting K M 68 10 01 /L - 20 : 170m A (M ax.)
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KM681001/L
32-SOJ-4QO
March-1997
28-DIP-400
32-SOJ-400
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Untitled
Abstract: No abstract text available
Text: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)
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KM611001/L
KM611001/L-20
KM611001/L-25
KM611001/L-3
100mA
KM611001P/LP:
28-DIP-400
KM611001J/LJ:
28-SQJ-400A
KM611001/L
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Untitled
Abstract: No abstract text available
Text: KM611001 CMOS SRAM 1M x1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. (CMOS): 2 mA(Max.) Operating KM611001-20 : 130 mA(Max.) The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words
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KM611001
KM611001-20
KM611001
576-bit
KM611001-35
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