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    Untitled

    Abstract: No abstract text available
    Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF 32-Pin Am28F512 28F5l Am28F512-75 02S752A QD32bbS

    Untitled

    Abstract: No abstract text available
    Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time


    OCR Scan     		PDF 32-Pin 28F512A 2S752Ã 0032fc

    Untitled

    Abstract: No abstract text available
    Text: a PRELIM INARY Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns maximum access lime ■ CMOS low power consum ption


    OCR Scan     		PDF Am28F512A

    Untitled

    Abstract: No abstract text available
    Text: n Preliminary Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption ■ Flasherase Electrical Bulk Chlp-Erase - One second typical chip-erase


    OCR Scan     		PDF Am28F512 32-pin Am28F512-95C4JC Am28F512-95C3JC

    AMD am3 socket pinout

    Abstract: amd am3 pin out AM28F512
    Text: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption


    OCR Scan     		PDF 02S7SEÃ Am28F512 32-pin T-46-13-27 compatibleD25752Ã 0Q3G714 T-46-13-2 Am28F512-95C4JC Am28F512-95C3JC AMD am3 socket pinout amd am3 pin out

    28FS12

    Abstract: No abstract text available
    Text: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current


    OCR Scan     		PDF Am28F512 32-Pin Am28F512-75 28FS12