2907A
Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E
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Q68000-A6474
VPS05161
OT-23
Jan-22-1999
2907/A
EHP00754
2907A
2907a TRANSISTOR PNP
transistor s2f
S2F MARKING SOT23
2907a transistor
npn 2907A
S2F SOT-23
s2F SOT23
PNP 2907a SOT23
Q68000-A6474
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transistor 2FX
Abstract: 1N916 MMBT2907ALT1
Text: MMBT2907ALT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating http://onsemi.com Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Symbol
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MMBT2907ALT1
556an
r14525
MMBT2907ALT1/D
transistor 2FX
1N916
MMBT2907ALT1
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MMBT2907AM3T5G
Abstract: No abstract text available
Text: MMBT2907AM3T5G Preferred Device General Purpose Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc
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MMBT2907AM3T5G
MMBT2907AM3T5G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40
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LMBT2907LT1G
LMBT2907ALT1G
S-LMBT2907LT1G
S-LMBT2907ALT1G
Alumin2907LT1G
OT-23
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2907 TRANSISTOR PNP
Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600
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MMBT2907LT1
MMBT2907ALT1
236AB)
2907 TRANSISTOR PNP
MMBT2907
MMBT2907 ON
1N916
MMBT2907A
MMBT2907ALT1
MMBT2907LT1
2907a TRANSISTOR PNP
MMBT2907A MMBT2907
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Untitled
Abstract: No abstract text available
Text: MMBT2907ALT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating http://onsemi.com Symbol 2907A Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol
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MMBT2907ALT1
236AB)
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LMBT2907ALT1G
Abstract: LMBT2907LT1G 1N916 LMBT2907
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage
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LMBT2907LT1G
LMBT2907ALT1G
LMBT2907LT1G
OT-23
LMBT2907ALT1G
1N916
LMBT2907
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MBT2907A
Abstract: 2F P marking LMBT2907 MARKING 2907A LMBT2907LT1G 1N916 mbt2907adw1t1g MBT2907
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT2907ADW1T1G Featrues 6 5 z We declare that the material of product compliance with RoHS requirements. 4 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 1 Unit –60 2 3 Vdc Collector–Emitter Voltage
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LMBT2907ADW1T1G
OT-363
SC-88/SOT-363
MBT2907A
2F P marking
LMBT2907
MARKING 2907A
LMBT2907LT1G
1N916
mbt2907adw1t1g
MBT2907
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MMBT2907
Abstract: MMBT2907A-2F maximum current rating of 2907A pnp transistor MMBT2907A sot-23 15V vebo pnp mmbt2907 2f mmbt2907 2f sot-23
Text: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
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MMBT2907
MMBT2907A
OT-23
OT-23
MMBT2907
MMBT2907A-2F
maximum current rating of 2907A pnp transistor
MMBT2907A
sot-23 15V vebo pnp
mmbt2907 2f
mmbt2907 2f sot-23
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MMBT2907ALT1G
Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
data sheet transisters
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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Untitled
Abstract: No abstract text available
Text: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60
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MMBT2907
MMBT2907A
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR LMBT2907LT1 LMBT2907ALT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage
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LMBT2907LT1
LMBT2907ALT1
LMBT2907LT1
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27
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OT-363
MMDT2227
OT-363
-500mA
-150mA,
-15mA
-500mA,
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage
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LMBT2907LT1G
LMBT2907ALT1G
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transistor 2222a
Abstract: 2222A 2907a npn 2907A 2907a TRANSISTOR PNP DMB2227A maximum current rating of 2907A pnp transistor pnp 2222a
Text: DMB2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • NEW PRODUCT • • • Complementary Pair Epitaxial Planar Die Construction One 2222A Type NPN , One 2907A Type (PNP) Ideal for Low Power Amplification and Switching
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DMB2227A
OT-26
DS31217
transistor 2222a
2222A
2907a
npn 2907A
2907a TRANSISTOR PNP
DMB2227A
maximum current rating of 2907A pnp transistor
pnp 2222a
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NPN2222A
Abstract: MARKING K27 2907a MMDT2227 PNP2907A 2222A MARKING 2907A PNP2907
Text: MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and
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MMDT2227
222A-Type
907A-Type
OT-363
OT-363,
MIL-STD-202,
DS30122
300mA
100mA
NPN2222A
MARKING K27
2907a
MMDT2227
PNP2907A
2222A
MARKING 2907A
PNP2907
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NPN2222A
Abstract: PNP2907A
Text: MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and
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MMDT2227
222A-Type
907A-Type
OT-363
OT-363,
MIL-STD-202,
-10mA,
-50mA,
100MHz
-150mA,
NPN2222A
PNP2907A
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transistor k7g
Abstract: IC K07 "dual TRANSISTORs" sot363 MARKING 2907A 2907a CMKT2907A 2907a TRANSISTOR PNP "two TRANSISTORs" sot-363 marking code 04 sot-363
Text: CMKT2907A CMKT2907AG ULTRAmini SURFACE MOUNT DUAL PNP SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and
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CMKT2907A
CMKT2907AG
CMKT2907AG
OT-363
100MHz
150mA,
transistor k7g
IC K07
"dual TRANSISTORs" sot363
MARKING 2907A
2907a
CMKT2907A
2907a TRANSISTOR PNP
"two TRANSISTORs" sot-363
marking code 04 sot-363
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MARKING CODE k07
Abstract: 2907a CMKT2907A marking code 04 sot-363 MARKING 2907A
Text: Central CMKT2907A TM Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A consists of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363
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CMKT2907A
OT-363
OT-363
100MHz
150mA,
MARKING CODE k07
2907a
CMKT2907A
marking code 04 sot-363
MARKING 2907A
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2907A
Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
Text: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching
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MMDT2227DW
OT-363
SC-88)
J-STD-020C
MIL-STD-202,
06-Dec-07
OT-363
2907A
2222a
npn 2907A
2222a NPN
tr 2222a
npn-pnp dual
NPN, PNP for 500ma, 30v
2222A transistors
22222a
transistor 2222a data sheet
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2907A
Abstract: No abstract text available
Text: 3SE m D fl23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025
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fl23b320
12-mm
Q62702-
Z2028
OT-223
Q62702â
Z2025
150Hz
200ns
2907A
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2907a TRANSISTOR PNP
Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474
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Q68000-A6474
OT-23
Jan-22-1999
EHPGQ751
2907a TRANSISTOR PNP
2907a transistor
s2f sot-23 marking
2907A symbol
TRANSISTOR S2F
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ransistors MMBT2907LT1 MMBT2907ALT1* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Symbol 2907 2907A Unit Collector- Emitter Voltage VCEO -40 -60 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage
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OCR Scan
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MMBT2907LT1
MMBT2907ALT1*
T2907LT1
BT2907ALT1
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
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Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
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