29F080
Abstract: 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14
Text: PRELIMINARY 29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns
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MX29F080
1024K
70/90/120ns
64K-Byte
AUG/10/2000
JUN/18/2001
PM0579
JAN/16/2002
29F080
29f080-90
MX29F080
SA10
SA11
SA12
SA13
SA14
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Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns
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PDF
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MX29F080
1024K
70/90/120ns
64K-Byte
page10
40-pin
MAY/29/2000
AUG/10/2000
PM0579
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION 29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns
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Original
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PDF
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MX29F080
1024K
70/90/120ns
64K-Byte
MAY/31/1999
DEC/07/1999
PM0579
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29f016
Abstract: 29F080 PCMCIA pinout sram AMD PCMCIA Flash Memory Card PCMCIA SRAM Card AMD PCMCIA linear Flash Memory Card
Text: PCMCIA Flash Memory Card FEB Series Eight Bit Flash Memory Card AMD based 1, 2, and 4 MEGABYTE General Description Features The FEB Econo Flash card series offers a low cost eight bit linear Flash solid state storage solution for code/data storage and embedded applications.
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Am29F080
Am29F016
29F080
29F016
100ns
150ns
PCMCIA pinout sram
AMD PCMCIA Flash Memory Card
PCMCIA SRAM Card
AMD PCMCIA linear Flash Memory Card
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29f016
Abstract: No abstract text available
Text: PCMCIA Flash Memory Card FEB Econo Flash Series Eight Bit Flash Memory Card AMD based 1, 2, and 4 MEGABYTE FEATURES The FEB Econo Flash card series offers a low cost eight bit linear Flash solid state storage solution for code/data storage and embedded applications.
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Am29F080
Am29F016
29F080
29F016
100ns
150ns
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29F080
Abstract: HY29F080T90 1N3064 HY29F080 PSOP44 7915 full pack hyundai tv hy 22 f circuit 3611-1
Text: 29F080 Series 8 Megabit 1M x 8 , 5-volt Only, Flash Memory KEY FEATURES n 5-Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as low as 55 ns n Low Power Consumption – 15 mA typical active read current
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HY29F080
S-128
HY29F080
29F080
HY29F080T90
1N3064
PSOP44
7915 full pack
hyundai tv hy 22 f circuit
3611-1
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programming 29F400
Abstract: 29F016 29F040 29f800 29f400 29F080 28F010 28F020 28F256 28F512 29F010
Text: BDM-Debugger TX68k Debug Control By The Chip Motorola incorporates the Background Debug Mode BDM in all CPU32/CPU32+ core based microcontrollers. BDM provides Debug-Control by the chip itself via an 8- or 10-pin connector. This allows for building simple debug
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TX68k
CPU32/CPU32+
10-pin
TX68k
MC68360
on9-721-9628-149
Feb-98-001
CV47EZ
programming 29F400
29F016
29F040
29f800 29f400
29F080
28F010
28F020
28F256
28F512
29F010
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29F080
Abstract: 28F008S3 28F008S5 29786 Am29LV/F080
Text: E TECHNICAL PAPER Implementing MultiSourced Designs with Intel and AMD’s ByteWide Flash Memory November 1997 Order Number: 297864-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
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Intel-374
AP-627
16-Mbit
29F080
28F008S3
28F008S5
29786
Am29LV/F080
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29F080
Abstract: No abstract text available
Text: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current
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29F080
S29F080-55TC
AS29F080-70TC
S29F080-70TI
AS29F080-90TC
S29F080-90TI
29F080-120T
S29F080-120T
S29F080-150T
29F080-150T
29F080
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EZ635
Abstract: AM29F080 SA12 SA13 SA14 SA15 fi37
Text: P R E L IM IN A R Y Am 29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements
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Am29F080
40-pin
44-pin
02S752Ã
0337bl
EZ635
SA12
SA13
SA14
SA15
fi37
|
Untitled
Abstract: No abstract text available
Text: AMD£I 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology
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Am29F080B
Am29F080
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29F080
Abstract: S29F080
Text: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s
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AS29F080-90TC
A529F080-90TI
AS29F080-90SC
A529F080-90SI
AS29F080-î
AS29F080-120TI
AS29F080-12OSC
AS29F080-120SI
AS29F080-IS0TC
AS29F080-I50TI
29F080
S29F080
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMDZ1 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ Package options
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Am29F080B
40-pin
29F080
44-pin
29F080B
|
|
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMDZ1 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — M inimizes system level power requirem ents ■ M anufactured on 0.35|xm process technology
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Am29F080B
40-pin
29F080
44-pin
29F080B
16-038-TSOP-1
TSR040â
|
Untitled
Abstract: No abstract text available
Text: AMD£I 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F080B
20-year
Am29F080
40-pin
44-pin
|
AM29F080
Abstract: SA12 SA13 SA14 SA15 AM29F0808
Text: PRELIM INARY a 29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices d is t in c t iv e c h a r a c t e r is t ic s • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements
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Am29F080
40-pin
44-pin
SA12
SA13
SA14
SA15
AM29F0808
|
Am29F080B
Abstract: No abstract text available
Text: AMD£I 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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OCR Scan
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PDF
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Am29F080B
20-year
Am29F080
40-pin
44-pin
|
29F080
Abstract: No abstract text available
Text: P R E L IM IN A R Y 29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements
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OCR Scan
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Am29F080
44-pin
02S752Ã
a0337bl
29F080
|
Am29F080B
Abstract: No abstract text available
Text: PRELIM IN ARY AMDZ1 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)
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Am29F080B
40-pin
29F080
44-pin
29F080B
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I AmMCOXXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2, 4, or 8 Mbytes of addressable Flash memory ■ 5.0 Volt-only, single power supply operation ■ Available in industrial temperature grade
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60-pad
100h10Bh.
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD£I 29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically
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Am29F080B
Am29F080
40-Pin
TSR040â
|
Untitled
Abstract: No abstract text available
Text: “H Y U N D A I 29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a
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HY29F080
G-70I,
T-70I,
R-70I
G-70E,
T-70E,
R-70E
G-90I,
T-90I,
|
Untitled
Abstract: No abstract text available
Text: HYU NDA I HV29F08° 8 M eg ab it 1M x 8 , 5 V o lt-o n ly , Flash M em o ry KEY FEATURES 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption - 15 mA typical active read current
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HY29F080
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