SA30* diode
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes
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DS05-20880-4E
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
F0311
SA30* diode
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20874-4E
MBM29DL16XTD/BD
F9909
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DIODE marking A19
Abstract: FPT-48P-M19 FPT-48P-M20
Text: 29DL16XTE/BE70/90 Data Sheet Retired Product 29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
DS05-20880-5E
F0311
ProductDS05-20880-5E
DIODE marking A19
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20880-1E
MBM29DL16XTE/BE
MBM29DL16XTE/BE
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20154TQ-C
Abstract: LXT972LC 29LV040B L1682B1J000 dynamite RC32300 L1682 MT4LSDT464HG-10EC3
Text: RC32351 System Recommendations 79RC32351 Notes Revision History February 5, 2002: Initial publication. Introduction The RC32351 Integrated Communications Processor meets the requirements of various embedded communications applications including residential gateways, SOHO routers, and wireless systems. It is a
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RC32351
79RC32351
32-bit
RC32351:
IDT32364
RC32351.
20154TQ-C
LXT972LC
29LV040B
L1682B1J000
dynamite
RC32300
L1682
MT4LSDT464HG-10EC3
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BGA-48P-M13
Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20874-4E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
BGA-48P-M13
DS05-20874-4E
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20880-1E
MBM29DL16XTE/BE
F0005
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Hyundai central locking
Abstract: bit 3501 Architecture HY29DL162 HY29DL163
Text: 29DL162/29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
Hyundai central locking
bit 3501 Architecture
HY29DL162
HY29DL163
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DS05-20880-3E
Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes
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DS05-20880-3E
MBM29DL16XTE/BE70/90
MBM29DL16XTE/BE
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
F0305
DS05-20880-3E
FPT-48P-M19
FPT-48P-M20
SA30* diode
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DS05-20874-4E
Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20874-4E
MBM29DL16XTD/BD
MBM29DL16XTD/MBM29DL16XBD
DS05-20874-4E
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
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NAND Flash Programmer with TSOP-48 adapter
Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
Text: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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DS05-20880-3E
Abstract: FPT-48P-M19 FPT-48P-M20
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0305
DS05-20880-3E
FPT-48P-M19
FPT-48P-M20
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FPT-48P-M19
Abstract: FPT-48P-M20 SA10 SA11 SA12 222eh 222DH 222BH BD703 mbm29dl16xtd
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD-70/-90/-12/29DL16XBD-70/-90/-12 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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L16XTD-70/-90/-12/MBM29DL16XBD-70/-90/-12
48-pin
FPT-48P-M19
FPT-48P-M20
SA10
SA11
SA12
222eh
222DH
222BH
BD703
mbm29dl16xtd
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “29DL16XTD/BD Device Bank Divisions Table”
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DS05-20874-6E
MBM29DL16XTD/BD
F0302
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mxic 29lv160
Abstract: 29lv160 Flash 29LV160 MX29LV160 29lv intel 28f160 28F160C3 FBGA48 amd Block Lock Bit amd Block Lock Bit Reset
Text: Macronix International Co., Ltd. Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW160T/B and MX29LV160 instead of Intel 28F160B3/C3 and AMD Am29LV160.
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MX29LW160T/B
MX29LV160
28F160B3/C3
Am29LV160
MX29LW160
MX29LV160T/B
Am29LV160DT/B
28F160C3
1Mx16
2Mx8/1Mx16
mxic 29lv160
29lv160 Flash
29LV160
29lv
intel 28f160
28F160C3
FBGA48
amd Block Lock Bit
amd Block Lock Bit Reset
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1820-1940
Abstract: MBM29DL161BD-90PFTN MBM29DL163TD-90PFTN BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Text: 29DL16XTD/BD-70/90 Data Sheet Retired Product 29DL16XTD/BD -70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
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MBM29DL16XTD/BD-70/90
MBM29DL16XTD/BD
DS05-20874-8E
F0303
ProductDS05-20874-8E
1820-1940
MBM29DL161BD-90PFTN
MBM29DL163TD-90PFTN
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
mbm29dl16xtd
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32 Megabit 3.0-Volt only Page Mode Flash Memory
Abstract: No abstract text available
Text: 29DL162/29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
32 Megabit 3.0-Volt only Page Mode Flash Memory
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DS05-20880-1E
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20880-1E
MBM29DL16XTE/BE
MBM29DL16XTE/BE
DS05-20880-1E
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « 29DL162C/29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.
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Am29DL16xC
16-Bit)
20-year
FBC048.
40-pin
29DL16xC
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JESD-95
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL16xC
16-Bit)
29DL16xC
JESD-95
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY A M D il 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES • ■ ■ Sim ultaneous R ead/W rite o perations — Data can be continuously read from one bank w hile
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Am29DL16xC
16-Bit)
29DL16xC
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222DH
Abstract: SKB 7 02 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY M l l l 16M 2M X 8/1M X 16 BIT
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MBM29DL16XTD/BD
MBM29DL16XTDMBM29DL16XBD
F48030S-2C-2
MBM29DL16XTD/BD-70/90/12
48-pin
BGA-48P-M13)
000000o
48-0O
B480013S-1C-1
222DH
SKB 7 02
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
mbm29dl16xtd
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D il 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ ■ 20 Year data retention at 125°C
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Am29DL16xC
16-Bit)
DL162.
29DL16xC
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