sck082
Abstract: No abstract text available
Text: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91FY28 Semiconductor Company Under development TMP91FY28 CMOS 16-Bit Microcontroller TMP91FY28FG 1. Outline The TMP91FY28 is a high-speed and high-performance 16-bit microcontroller suitable for
|
Original
|
PDF
|
16-Bit
TLCS-900/L1
TMP91FY28
TMP91FY28FG
TMP91FY28
100-pin
sck082
|
MX29SL800C
Abstract: MX29SL800CT SA10 SA11 SA12 SA13
Text: 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array
|
Original
|
PDF
|
MX29SL800C
1Mx8/512K
100mA
MX29SL800CT
SA10
SA11
SA12
SA13
|
29sl800
Abstract: WFBGA
Text: 29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable
|
Original
|
PDF
|
MX29SL800C
MX29SL802C
16K-Byte
32K-Byte
64K-Byte
100mA
29sl800
WFBGA
|
Untitled
Abstract: No abstract text available
Text: 29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable
|
Original
|
PDF
|
MX29SL800C
MX29SL802C
16K-Byte
32K-Byte
64K-Byte
100mA
|
29LV160TE
Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Text: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,
|
Original
|
PDF
|
D-63303
F-94035
D-85737
I-20080
29LV160TE
29lv800ta
Micron 512MB NOR FLASH
29F800TA
29F033C
29f400tc
TSOP 48 Package
29f160te
Micron 32MB NOR FLASH
29f002tc
|
Untitled
Abstract: No abstract text available
Text: 29SL800C T/B MX29SL802C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable
|
Original
|
PDF
|
MX29SL800C
MX29SL802C
16K-Byte
32K-Byte
64K-Byte
100mA
|
Untitled
Abstract: No abstract text available
Text: 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array
|
Original
|
PDF
|
MX29SL800C
1Mx8/512K
100mA
Architectu/20/2006
|
TMP91FY28
Abstract: TMP91FY28FG
Text: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91FY28 Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”.
|
Original
|
PDF
|
16-Bit
TLCS-900/L1
TMP91FY28
TMP91FY28FG
TMP91FY28
TMP91FY28FG
100-pin
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array
|
Original
|
PDF
|
MX29SL800C
1Mx8/512K
100mA
Se28/2006
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 29SL800C T/B FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion • Hardware reset pin (RESET#) - Hardware method to reset the device to reading array
|
Original
|
PDF
|
MX29SL800C
1Mx8/512K
100mA
Se21/2006
|
Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY AMDZ1 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800C
8-Bit/512
16-Bit)
29SL800B
29SL800C
FGB048â
48-Ball
16-038-FG
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii 29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800B
8-Bit/512
16-Bit)
AM29SL800B
29SL800B
|
29SL800C
Abstract: No abstract text available
Text: PRE LIM IN A R Y AMD il 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800C
8-Bit/512
16-Bit)
29SL800B
FBB048:
29SL800C
29SL800C
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii 29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations ■
|
OCR Scan
|
PDF
|
Am29SL800B
8-Bit/512
16-Bit)
29SL800B
|
|
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION DRAFT AM Dil 29SL800C 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations ■ Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800C
8-Bit/512
16-Bit)
29SL800B
29SL800C
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDil 29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations ■ Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800B
8-Bit/512
16-Bit)
DA104
FGB048â
48-Ball
16-038-FGB-2
|
Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY AMDZ1 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800C
8-Bit/512
16-Bit)
29SL800B
29SL800C
|
Untitled
Abstract: No abstract text available
Text: AMD il PRELIM IN ARY 29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29SL800C
8-Bit/512
16-Bit)
29SL800B
FBB048:
29SL800C
|
Untitled
Abstract: No abstract text available
Text: Advance information •■ 29SL800 A 1.8V ! M x 8 / 5 1 2 K x l 6 CMOS Flash EEPROM Features • Organization: 1Mx 8 /5 1 2 K x 16 • Sector architecture • • • • • Law power consumption One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors One 8K; two 4K; one 16K; and fifteen 32Kword sectors
|
OCR Scan
|
PDF
|
AS29SL800
64Kbyte
32Kword
48-pin
44-pin
AS29SL800T-200SC
AS29SL800T-200SI
44-pin
AS29SL800B-100SC
AS29SL800B-100SI
|
