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    2N1529 Price and Stock

    Motorola Semiconductor Products 2N1529

    TRANSISTOR,BJT,PNP,30V V(BR)CEO,5A I(C),TO-3
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    TRANSISTOR,BJT,PNP,30V V(BR)CEO,5A I(C),TO-3
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    2N1529 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1529 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1529 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1529 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1529 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1529 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1529 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1529 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1529 Unknown Vintage Transistor Datasheets Scan PDF
    2N1529 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1529 Semitron Germanium Power Transistors Scan PDF
    2N1529 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N1529 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N1529A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1529A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1529A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1529A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1529A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1529A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1529A Unknown Vintage Transistor Datasheets Scan PDF
    2N1529A Unknown Shortform Transistor Datasheet Guide Short Form PDF

    2N1529 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AD166

    Abstract: AD262 AD263 2N256 2N4241 2N2066 2N1202 2n2148 2N2U germanium
    Text: POWER GERMANIUM PNP Item Number Part Number • 10 >= 20 AD262 2N663 2N1245 2N1246 OC25 AD263 AD263 2N1971 I C 25 30 40 MP1534 2N378 2S8493 2S8493 2N2064A 2N1539A 2N3311 2N4241 2S8493W ~:;11~: 45 50 2N1544A 2N3314 MP1530 2N1529 2N1529A 2N3215 MP1535 2N1534


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    PDF 250kk 8000n 2N2148 AD166 2N2066A 2N1541A MP1546 2N1546 AD262 AD263 2N256 2N4241 2N2066 2N1202 2N2U germanium

    rca 101m

    Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50


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    PDF 2SC458K 2N3856A BC383L MPS3707 BC223A BC232A BC223 rca 101m Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402

    Delco

    Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


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    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Text: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


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    PDF 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136 2N1159 2N1537 N1137 Germanium power

    2N555

    Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
    Text: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40


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    PDF 42Amp) 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N555 Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N307 2N250

    2n113

    Abstract: 2N2146 N1137 2N1136B Germanium power 2N351A 2N2140A 2N1537 2N637 2N376A
    Text: germanium power transistors 145 PNP ALLOY TRANSISTORS .5 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER Vel VeE VEl VeE Ie (A) Min. Max. Vel rnA 2N2138A 2N2139 2N2139A 2N2140 2N2140A 2N2141 2N2141A 2N2142 2N2142A 2N2143 2N2143A 2N2144 2N2144A 45 45A


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    PDF 2N2138A 2N2139 2N2139A 2N2140 2N2140A 2N2141 2N2141A 2N2142 2N2142A 2N2143 2n113 2N2146 N1137 2N1136B Germanium power 2N351A 2N1537 2N637 2N376A

    2N1536

    Abstract: 2n1547 2N1544 2N1545 2n1540 2N1533 2N1537 2N1542 2n1541 2N1535
    Text: TYPES 2N1529 THRU 2N1548 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS §m s* i s PS FOR HIGH-POWER SWITCHING g% AND AMPLIFIER APPUCATIONS §% M z o < m m ech an ical d a ta g These transistors are in precision welded, hermetically sealed enclosures.The mounting base provides an


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    PDF 2N1529 2N1548 2N1536 2n1547 2N1544 2N1545 2n1540 2N1533 2N1537 2N1542 2n1541 2N1535

    2N1545

    Abstract: 2N1546 2N457 2N1548 2N1137A 2N1168 2N1537A 2N1540 2N456A 2N2267
    Text: 51 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN T Y PE N U M BER C ASE TYPE V CBO V I V CEO v e:b o V V 5 AMP G ERM A N IlJM PNP 2N1168 TO 3 2N1529 TO-3 2N1529A TO-3 50 40 40 2N1530 TO-3 2N1530A TO-3 2N1531 TO-3 V C ER V V C ES V hZE M IN. M AX. V CE


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    PDF 2N1168 2N1529 2N1529A 2N1530 2N1530A 2N1531 2N1531A 2N1532 2N1532A 2N1168 2N1545 2N1546 2N457 2N1548 2N1137A 2N1537A 2N1540 2N456A 2N2267

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


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    PDF 2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    germanium transistors NPN

    Abstract: 2n1549 2N627 2N456A 2n1162 2N1560 germanium 2N458A 2n1291 2N1295
    Text: germanium power transistors PNP TO-3 cont’d Type# = 3 to 25A Iife @ Ic / V c E NPN Comple­ VcEO(SUS) V ebo (Volts) (Volts) ment (Min-Max @ A/V) VcE(SAT) @ Ic/ I b Pd @ = 25°C Û JC (Watts) (°C/W) (V @ A/A) V be @ Ic/V cE (V @ A/V) (mA @ 1.5@5/1.5 1.5@5/1.5


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    PDF 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2NX021A 2N1022A 2N1218 2N1292 germanium transistors NPN 2n1549 2N627 2n1162 2N1560 germanium 2n1291 2N1295

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    2N1543

    Abstract: 2N1545 2n1547 2N1159 2N234A 2N235B 2N255A 2N256A 2N257 2N350
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type y kü y VCEO y y tao V ycc. y y„. y Min. CURRENT CA IN fai f VcE @ lç Max. V A s a t u r a t io n y y 1.50 y OL TAGES ¿e @ Ib A A &J-C ac / w 4 AMP GERMANIUM PNP 2N234A 2N235B 2N255A 2N256A 2N257 TO-3 TO-3


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    PDF 2N234A 2N235B 2N255A 2N256A 2N257 2N553 2N663 2N1159 2N350 2N350A 2N1543 2N1545 2n1547

    2N2067

    Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
    Text: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE


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    PDF 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B 2N1183 Ind50-100/3/2 2N1541S 2N15425 2N2067 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1184A

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a

    MOTOROLA POWER TRANSISTOR

    Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
    Text: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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