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    Nisshinbo Micro Devices R1172N311D-TR-FE

    IC REG LINEAR 3.1V 1A SOT23-5
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    Nisshinbo Micro Devices R3112N311A-TR-FE

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    R3112N311A-TR-FE Digi-Reel 2,897 1
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    R3112N311A-TR-FE Reel 3,000
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    Mouser Electronics R3112N311A-TR-FE 2,779
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    Central Semiconductor Corp 2N3117-PBFREE

    TRANS NPN 60V 0.05A TO18
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    DigiKey 2N3117-PBFREE Bulk 2,000
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    NXP Semiconductors TDA3602-N3,112

    IC REG LIN 8.5V/5V/5V 9-SIL MPF
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    Nisshinbo Micro Devices R1172N311B-TR-FE

    IC REG LINEAR 3.1V 1A SOT23-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1172N311B-TR-FE Reel 3,000
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    • 10000 $0.49149
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    Mouser Electronics R1172N311B-TR-FE
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    2N311 Datasheets (209)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N311 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N311 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N311 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N311 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N311 Unknown Vintage Transistor Datasheets Scan PDF
    2N311 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N311 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N311 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N311 Unknown GE Transistor Specifications Scan PDF
    2N3110 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N3110 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N3110 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3110 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3110 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3110 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N3110 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N3110 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3110 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=40-120 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N3110 Micro Electronics Semiconductor Devices Scan PDF
    2N3110 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    ...

    2N311 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3114CSM

    Abstract: No abstract text available
    Text: 2N3114CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    PDF 2N3114CSM 10/30m 2-Aug-02 2N3114CSM

    Untitled

    Abstract: No abstract text available
    Text: ,U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 NPN2N3108-2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.


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    PDF NPN2N3108-2N3110 2N3108 2N3110 2N3108 2N3110 20MHz

    BC238BP

    Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323


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    PDF 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC399 BC238BP BF494C BC238CP BSX77 2N295 BF194 2N2954 bf494 motorola BF332

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


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    PDF 2N3114CSM 150mA 350mW

    2n3114

    Abstract: No abstract text available
    Text: 2N3114 Si NPN Lo-Pwr BJT 4.50 Transistors Transistors Bipolar Si NP. 1 of 2 Home Part Number: 2N3114 Online Store 2N3114 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 2N3114 com/2n3114 2N3114

    S07T_2N3117

    Abstract: 2n3117
    Text: 2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C


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    PDF 2N3117 2N3117 150mA, 30MHz 10kHz S07T_2N3117

    2N3110

    Abstract: c 2579 power transistor
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON POWER SWITCHING TRANSISTOR 2N3110 TO-39 Metal Can Package For AF Medium Power Drivers and Outputs, as well as for Switching Applications


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    PDF 2N3110 C-120 2N3110Rev070103E 2N3110 c 2579 power transistor

    2N3114

    Abstract: No abstract text available
    Text: 2N3114 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER


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    PDF 2N3114 2N3114 20MHz 140kHz

    Untitled

    Abstract: No abstract text available
    Text: \Pioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3119 NPN SILICON TRANSISTOR JEDEC TO-39 CASE 2N3H9 type is a silicon NPN transistor manufactured by the epitaxial planar process designed for high voltage switching applications.


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    PDF 2N3119 50MHz VCC-28V, 100mA,

    2N3114

    Abstract: P008B
    Text: 2N3114 HIGH VOLTAGE AMPLIFIER DESCRIPTION The 2N3114 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol


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    PDF 2N3114 2N3114 P008B

    tn-59

    Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
    Text: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A


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    PDF 150mA i00mA 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2958 2N2959 2N3133 tn-59 2222 NPN N 2222 2N2906A 2N2907

    150 watt hf transistor 12 volt

    Abstract: MC 140 transistor "MC 140" transistor 300 watt hf transistor 12 volt 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt transistor mc 140 2N3118 SSF 4606 MC 150 transistor
    Text: File No. 42 R F Power T ra n sis to rs Solid State Division 2N3118 R C A - 2 N 3 1 1 8 is a t r i p l e - d i f f u s e d p l a n a r t r a n s i s t o r of the s i l i c o n n - p - n t y p e i n ­ t e n d e d for use in R F a m p l i f i e r s in m i l i t a r y


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    PDF 2N3118 RCA-2N3118 92CS-I2276 150 watt hf transistor 12 volt MC 140 transistor "MC 140" transistor 300 watt hf transistor 12 volt 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt transistor mc 140 2N3118 SSF 4606 MC 150 transistor

    2N3117

    Abstract: No abstract text available
    Text: 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 5o mA Ie < o m eo V p d is s 3eo mW @ Ta = 25 °C Tj -es 0C to +2oo 0C Ts t g -e5 0C to +2oo 0C 0 je


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    PDF 2N3117 2N3117

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


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    PDF 2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917

    2n3114

    Abstract: No abstract text available
    Text: FI "T-^l -US - 3QE JD H 7 ^ 2 3 7 ÜQBllbl T • . S G S-THOMSON ._ ~ -S G S -T H O M S O N G * ^ Q & iC T [ïM O Û S 2 N3114 HIGH VOLTAGE AMPLIFIER DESC RIPTIO N The 2N3114 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-39 metal case. It is primarily


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    PDF N3114 2N3114

    2N2201

    Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
    Text: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings


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    PDF DDDQ133 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358

    2N1256 S P

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min


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    PDF 2N3117 2N4383 2N4384 2N4385 2N4386 CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 2N1256 S P

    2N3114

    Abstract: N3114
    Text: rZ 7 SGS-THOMSON *7# R HiOraSOSDOS 2 N3114 HIGH VOLTAGE AMPLIFIER D E S C R IP T IO N The 2N3114 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applica­ tions. IN T E R N A L S C H E M A T IC D IA G R A M


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    PDF N3114 2N3114

    pic 08m

    Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174


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    PDF 2N3053SM 2N3054 2N3055 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E pic 08m 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411

    2N3117

    Abstract: No abstract text available
    Text: TYPE 2N3117 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -5 6 7 8 8 7 6 , J A N U A R Y 1 96 7 DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hi, 100 Hz, 1 kHz and 10 kHz • High Guaranteed hF[ at


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    PDF 2N3117 752SJ

    2N3119

    Abstract: solid state RF HIGH-POWER SWITCH TFA 1001 RCA-2N3119
    Text: File No. 44 DQGBÆI RF P o w er Transisto rs Solid State Division 2N3119 H ig h -P o w er Silicon N -P -N Planar Transistor For Switching and Pulse-Amplifier Applications F e a tu re s : • High voltage ratings: V C E X = 100 V ' V CEO = 8 0 V ■ Fast rise tim e:


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    PDF 2N3119 RCA-2N3119 SS-3821 2N3119 solid state RF HIGH-POWER SWITCH TFA 1001

    2N217

    Abstract: 2N2708 2N4135 2N859 2N915 2N3117 2N4383 2N4384 2N4385 2N4386
    Text: NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER Cont'd. TYPE NO. VCB 2N3117 2N4383 2N4384 2N4385 2N4386 • 60 40 40 40 40 V VCE V EB hpE at •c Vce mA V V mA MHz 1.0 10 10 10 10 60 VcE(s) at V V min max 60 30 30 30 30 6 ■ 5 5 250 100 100 40 500 500 500 500


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    PDF 2N3117 2N4383 2N4384 2N4385 2N4386 2N915 2N916 CBR10 CBR25 CBR12 2N217 2N2708 2N4135 2N859 2N3117

    2n4929

    Abstract: No abstract text available
    Text: 8 1 3 4 6 9 3 SEMICQA _ MD DE | 6]i3Llb ,:i3 □□□□133 p £*7 ~ D \ NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS C ont’d Maximum Ratings Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2NB500 2K3501 2N4926 2N2726 2N2727


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    PDF 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2NB500 2K3501 2n4929

    2N3114

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T RS /R F 1SE D | 1.31,7254 ODflkBOl G | li 2N3114 ' CASE 79-04, STYLE 1 TO-39 TO-205AD M AXIMUM RATINGS Symbol Value U nit Collector-Emitter Vottage(l) VCEO 150 Vdc Collector-Base Voltage VCBO 150 Vdo Emitter-Base Voltage Ve b o S.0 Vdo


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    PDF 2N3114 O-205AD) 2N34S8 2N3114