2N3906CSM
Abstract: No abstract text available
Text: 2N3906CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)
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2N3906CSM
10/1m
17-Jul-02
2N3906CSM
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1N916
Abstract: 2N3904C 2N3906C
Text: SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) N E K @VCE=-30V, VEB=-3V. G D J ᴌExcellent DC Current Gain Linearity.
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2N3906C
-50nA
-50mA,
2N3904C.
x10-4
300ns
1N916
1N916
2N3904C
2N3906C
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2N3904C
Abstract: 1N916 2N3906C
Text: SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) N K @VCE=-30V, VEB=-3V. E G Excellent DC Current Gain Linearity.
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2N3906C
-50nA
-50mA,
2N3904C.
x10-4
300ns
1N916
2N3904C
1N916
2N3906C
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3906c
Abstract: 2N3906C marking 2n 2N3906
Text: SEMICONDUCTOR 2N3906C MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906C K 3 No. Item 016 2 4 Marking Description 2N Series Name 3906C Device Name KEC K KEC CORP. Lot No. 016 Device Name 2000. 12. 27 Revision No : 0 Year
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2N3906C
3906C
3906c
2N3906C
marking 2n
2N3906
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR 5GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage
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2N3906C
-50nA
-50mA,
2N3904C.
-10mA,
100MHz
x10-4
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2N3906CSM
Abstract: No abstract text available
Text: 2N3906CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)
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2N3906CSM
10/1m
2-Aug-02
2N3906CSM
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2N3906CSM
Abstract: No abstract text available
Text: 2N3906CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 1 1.91 ± 0.10
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2N3906CSM
2N3906CSM
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV
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O-92M
KRC102M
KRC112M
O-92L
KTN2369,
KTC3194
KTC3197,
KTC3198
KTC945B
KIA431
CHINA TV FBT
transistor 2N3906 smd 2A SOT23
TS4B05G
transistor 2N3904 smd 2A SOT23
fbt tv
KIA7812API
KIA431A transistor
transistor KIA431A
CHINA TV uoc
2N60 MOSFET SMPS
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478 SOCKET PINOUT
Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays THAT300
Text: T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS 4 Matched NPN Transistors 300 4 Matched PNP Transistors (320) 2 Matched NPNs and PNPs (340) 4 Matched NP6N - 4 Matched PNP (380) • Microphone Preamplifiers ·
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THAT300
1613u
1232u
478 SOCKET PINOUT
2N3906 PNP bipolar junction transistor
pnp 8 transistor array
"Microphone Preamplifiers"
312 2N3904
dual 2N3904 NPN Transistor
Dual PNP Transistor
THAT320S
PNP monolithic Transistor Arrays
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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1N916
Abstract: 2N3904C 2N3906C
Text: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. G D J ᴌExcellent DC Current Gain Linearity.
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2N3904C
2N3906C.
x10-4
300ns
1N916
1N916
2N3904C
2N3906C
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Untitled
Abstract: No abstract text available
Text: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ
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THAT120
THAT120
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
2N3810 LCC
2N2222A LCC1
ESCC 5202-001
MCA3201/2B
ESCC 5204/002
bul54ah
mp2835
ESCC 5201-002
silicon carbide JFET
2n918 die
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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1N916
Abstract: 2N3904C 2N3906C
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe = -30V , V eb = -3V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906C
-50nA
-50mA,
2N3904C.
300ns
1N916
20/xs
300//S,
1N916
2N3904C
2N3906C
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PDF
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1N916
Abstract: 2N3904C 2N3906C
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906C
-50nA
-50mA,
2N3904C.
300ns
1N916
20/xs
300//S,
2N3904C
2N3906C
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PDF
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Untitled
Abstract: No abstract text available
Text: SEM IC O N D U C T O R 2N3906C TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ice-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @VCe=-3 OV, V EB=-3 V. G- 1 • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906C
---50nA
-50nA
-50mA,
2N3904C.
300/iS,
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PDF
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2N3904C
Abstract: 1N916 20MS 2N3906C
Text: SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x = 5 0 n A M a x . , lB L = 50n A (M ax.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3904C
2N3906C.
Vce-10V,
300ns
1N916?
300//S,
2N3904C
1N916
20MS
2N3906C
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transistor 2N3907
Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A
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OCR Scan
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2N3790X
2N3791
2N3791-SM
2N3792
2N3792-SM
2N3792LP
2N3799
2N3799X
transistor 2N3907
t018 transistor
2N39Q4
2N3904D
2N3904DCSM
2N3906CSM
T071
DUAL TRANSISTOR
"Dual PNP Transistor"
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1N916
Abstract: 20MS 2N3904C 2N3906C transistor 1tp
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @V ce=30V, Veb=3V. • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3904C
2N3906C.
300ns
1N916
300//S,
20MS
2N3904C
2N3906C
transistor 1tp
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