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    2N4912 Search Results

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    2N4912 Price and Stock

    Microchip Technology Inc 2N4912

    TRANS PNP 80V 4A TO66
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    Verical 2N4912 2 2
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    Onlinecomponents.com 2N4912
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    NTE Electronics Inc 2N4912

    T-Npn Si- Af Po Rohs Compliant: Yes |Nte Electronics 2N4912
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    Fairchild Semiconductor Corporation 2N4912

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    2N4912 8
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    2N4912 3
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    Solid State Devices Inc (SSDI) 2N4912

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    Motorola Mobility LLC 2N4912

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    2N4912 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4912 Central Semiconductor Power Transistors Original PDF
    2N4912 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N4912 API Electronics Short form transistor data Short Form PDF
    2N4912 API Electronics Transistor Selection Guide Scan PDF
    2N4912 API Electronics Short form transistor data Short Form PDF
    2N4912 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    2N4912 Diode Transistor Transistors Scan PDF
    2N4912 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N4912 General Transistor Power Transistor Selection Guide Scan PDF
    2N4912 Mospec POWER TRANSISTORS(1A,80V,25W) - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=20-100 / fT(Hz)=3M / Pwr(W)=25 Scan PDF
    2N4912 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4912 Motorola European Master Selection Guide 1986 Scan PDF
    2N4912 Motorola The European Selection Data Book 1976 Scan PDF
    2N4912 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N4912 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4912 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4912 Unknown Vintage Transistor Datasheets Scan PDF
    2N4912 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4912 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4912 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2N4912 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4912XSMD

    Abstract: No abstract text available
    Text: 2N4912XSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


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    PDF 2N4912XSMD O276AB) 15-Aug-02 2N4912XSMD

    2n4912

    Abstract: No abstract text available
    Text: 2N4912 w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and


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    PDF 2N4912 2N4912 100mA 500mA 250mA, 100kHz

    Untitled

    Abstract: No abstract text available
    Text: 2N4912 POWER TRANSISTORS 1A - 80V - 25W 1.51 Transistors Bip. 1 of 1 Home Part Number: 2N4912 Online Store 2N4912 Diodes PO WER TRANSISTO RS( 1 A - 8 0 V - 2 5 W) Transistors Enter code INTER3 at checkout.*


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    PDF 2N4912 com/2n4912 2N4912

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    Untitled

    Abstract: No abstract text available
    Text: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034)


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    PDF 2N4910X 2N4911X 2N4912X O-213AA) 500mA

    2N4910X

    Abstract: 2N4911X 2N4912X
    Text: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS • SCREENING OPTIONS AVAILABE 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 2 1 14.48 (0.570)


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    PDF 2N4910X 2N4911X 2N4912X 2N4910X 2N4911X 300ms, 2N4912X

    2N4912XSMD05

    Abstract: No abstract text available
    Text: 2N4912XSMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


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    PDF 2N4912XSMD05 O276AA) 15-Aug-02 2N4912XSMD05

    2N4001 diode

    Abstract: 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991
    Text: Device Type VCEO hFE V Min/Max 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N3665 2N3666 2N3766 2N3767 2N4000 2N4001 2N4237 2N4238 2N4239 2N4910 2N4911 2N4912 2N5660 2N5661 2N5662 2N5663 2N5681 2N5682 80 100 80 100 80 100 80 100


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    PDF 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N4001 diode 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N4912 O-213AA)

    2N4912

    Abstract: LE17
    Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N4912 O-213AA) 2N4912 LE17

    2N5428

    Abstract: No abstract text available
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N5428

    2N4898

    Abstract: 2N4900 2N4899 2N4912
    Text: SavantIC Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching


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    PDF 2N4898 2N4899 2N4900 2N4900 2N4912 2N4898 2N4899 2N4912

    2N4912

    Abstract: 2N4910 2N4911 2N4900
    Text: SavantIC Semiconductor Product Specification 2N4910 2N4911 2N4912 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching


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    PDF 2N4910 2N4911 2N4912 2N4912 2N4900 2N4910 2N4911 2N4900

    2N4912

    Abstract: Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4912 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation


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    PDF 2N4912 2N4900 500mA 100kHz 2N4912 Vceo 80V Ic 1A 2N4900 transistor Ic 1A datasheet NPN IC 1A 80V 1A NPN Transistor

    2N4912

    Abstract: 2N4912 MOTOROLA
    Text: MOTORGLA SC X S T R S /R F 1EE D I b3b?5S4 GQfl4517 2 | SEMICONDUCTOR 2N4912 " ^ 3 3 ' 0 e! MOTOROLA TECHNICAL DATA NPN SILIC O N TRANSISTO R 1 AMPERE . . . designed for driver circuits, switching, and amplifier applications. This high-performance device features:


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    PDF GQfl4517 2N4912 2N4912 2N4912 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


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    PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    2N4912

    Abstract: No abstract text available
    Text: ¿Z&MOSPEC NPN SILICON TRANSISTORS .designed for driver circuits, switching and amplifier applications. NPN 2N4912 FEA TU RES: * Low Collector-Emitter Saturation Voltage VCE,Mt = 0 .6 V M a x .)@ lc = 1 .0A * Excellent Safe Operating Area * Gain Specified to lc= 1.0 Amp.


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    PDF 2IM4900 2N4912 2N4912

    2N3740

    Abstract: 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4898 2N4899 2N4910 2N4911
    Text: NE III ENGLAND SEMI CONDUCT OR 5TE bSbHTTa D = 1-5À VCEO SUS = 4 0 -4 2 5 V fT = 3-10 M H z □□□□□SO lc ( M A X ) Type No. 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4899 2N4900 2N5344 2N4910 2N4911 2N4912 2N3767 VCEQ (SUS) (V) 1C (MAX) (A) 60


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    PDF 0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4898 2N4910 2N1483 2N3740A 2N3741A 2N4899 2N4911

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111

    2N4912

    Abstract: No abstract text available
    Text: 2N4912 NPN SILICON TRANSISTORS .designed for driver circuits, switching, and amplifier applications. This high-performance device features: • • • • LOW SATURATION VOLTAGE - VCE SAT = 0.6 V MAX @ Ic = 1.0 AMP. EXCELLENT SAFE OPERATION AREA GAIN SPECIFIED TO Ic = 1.0 AMP.


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    PDF 2N4912 N4900 2N4912

    2n5430

    Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
    Text: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V


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    PDF BUR10 BUR11 BUR12 BUX77 BUX78 2N4910 2N4898 2N4911 2N4899 2N4912 2n5430 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4900

    2n4912

    Abstract: No abstract text available
    Text: ¿Z&MOSPEC NPN SILICON TRANSISTORS .designed for driver circuits, switching and amplifier applications. NPN 2N4912 FEA TU RES: * Low Collector-Emitter Saturation Voltage VCE,Mt = 0 .6 V M a x .)@ lc = 1 .0A * Excellent Safe Operating Area * Gain Specified to lc= 1.0 Amp.


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    PDF 2N4900 2N4912 2N4912 ------Te-25

    4912

    Abstract: 40VVCR 2N4900 4911 2N4910 2n4912
    Text: EPITAXIAL PLANAR NPN 4 9 10 2N 4 9 11 2N 4 9 12 MEDIUM POWER GENERAL PURPOSE TRANSISTORS The 2N 4910. 2N4911 and 2N4912 are silicon epitaxial planar NPN transistors in Jedec TO -66 metal case. They are intended for use in switching and am plifier applications.


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    PDF 2N4911 2N4912 2N4900 2N491Q 2N4911 250mA 100KHZ 4912 40VVCR 4911 2N4910