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    2N5093 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5093 Diode Transistor Transistor Short Form Data Scan PDF
    2N5093 General Diode Silicon Power Transistors Scan PDF
    2N5093 General Transistor Power Transistor Selection Guide Scan PDF
    2N5093 High Voltage Semi-Conductor Specialists Silicon PNP - Power Transistors Scan PDF
    2N5093 High Voltage Semi-Conductor Specialists Silicon PNP Power Transistors Scan PDF
    2N5093 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5093 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5093 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5093 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5093 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5093 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5093 New England Semiconductor BIPOLAR PNP TRANSISTOR TO-39 TO-5 Scan PDF
    2N5093 New England Semiconductor NPN TO-39 / TO-5 Transistor Scan PDF
    2N5093 New England Semiconductor Transistor Selection Guide Scan PDF
    2N5093 New England Semiconductor BIPOLAR PNP TRANSISTOR TO-39 / TO-5 Scan PDF
    2N5093 PPC Products Transistor Short Form Data Scan PDF
    2N5093 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5093 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5093 Solid State Devices PNP Transistors Scan PDF
    2N5093A Solid State Devices HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTOR Scan PDF

    2N5093 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5093 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)400 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5093 Freq20M

    10 35 DIODE

    Abstract: BFT19B diode 15 35
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504


    Original     		PDF 37var 220AB 10 35 DIODE BFT19B diode 15 35

    L0050A

    Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
    Text: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z


    OCR Scan     		PDF TWX-910-583-4807 2N5091A, 2N5093A, 2N5094A 2N5096A 50mAdc 25mAdc, 150Vdc 100mAde, L0050A 2N5096A lt 0210 2N5091A 2N5093A 2N5094A

    Transistor 2N5093

    Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >[email protected]/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)


    OCR Scan     		PDF O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 Transistor 2N5093 7 amps pnp transistor 2N5416A "PNP Transistor"

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    PDTC

    Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
    Text: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0


    OCR Scan     		PDF 2N3795 2N5281 2N4999 T0-59 2N5001 2N5333 SFT5333 2N3868 2M5003 PDTC 2N5282 2N5005

    2N5415

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >[email protected]/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) [email protected]/.25


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415

    2N3743

    Abstract: 2N4930 2N4931 2N5096 2N5282
    Text: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .


    OCR Scan     		PDF -p-33 lcs50MA trm7015 MD-14 trm7505 MO-14 trm8015 TRSP3014S TRSP3504 TRSP3514S 2N3743 2N4930 2N4931 2N5096 2N5282

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    741 IC

    Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >[email protected]/3 [email protected]/.25 6 60 2N3868 60 3 >[email protected]/3 [email protected]/.25 6 60 2N4930 200 .05 [email protected]/10 [email protected]/.001 5 10* 2N4931 250 .05


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415

    2N5286

    Abstract: 2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901
    Text: H P II PNP DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREiA K D O V VN V OLTAGE S SAT . V O L T A GES M<ax. h F: E CASE V CB VΠV EB (V) 'c (A) M in. Max. (A) 'b (A) V CE (V) V BE (V) 2N4236 TO -5 80 80 7 1 0.25 30 150 0.25 0.125 0.6 2 2N4387


    OCR Scan     		PDF 2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901 2N4902 2N5286

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


    OCR Scan     		PDF 34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


    OCR Scan     		PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    2N4927

    Abstract: 2N5415
    Text: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib


    OCR Scan     		PDF 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 2N1483 2N1484 2N1495 2N1486 2N4927 2N5415

    MD14

    Abstract: 2N3743 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5100 2N5281
    Text: 4 4 7 1 0 7 8 HIGH VOLTAGE ~ 80 DOOODDb 7 fioft T-37-W . p SILICON PNP POWER TRANSISTORS - MAX. THERM AL RES. Junction to Case « io fC /W MAX. C O L L. M A X. in Free T Air $2 5 *C E M Pc R J ABSO LU TE MAX. RATINGS £ 25* C . piss. h FE MIN.) GBW BIAS


    OCR Scan     		PDF 2N5091 2N5093 2N5094 2N5096 2N5100 2N3743 2N4930 2N4931 2N5281 2N5282 MD14

    PNP TO-39

    Abstract: 2N6191
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 pr D* ix [email protected]/.25 6 60 >[email protected]/3 [email protected]/.25 6 60 1 20-200@. 1/15 [email protected]/.0025 4 10* 350 1 [email protected]/15 [email protected]/.0025 4 10‘ 2N5094 400 1 [email protected]/15 [email protected]/.0025 4 10' 2N5096 450 1 [email protected]/15


    OCR Scan     		PDF O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 PNP TO-39 2N6191

    m30040

    Abstract: No abstract text available
    Text: GENERAL T RA NS IST O R CORP S4E D • 3=120001 OOOQOb? 3 General Transistor Corporation 216 W E ST FLO R EN C E A V EN U E IN GLEW O O D , C A LIFO RN IA 90301 213 673-8422 • Telex 65-3474 • FA X (213) 672-2905 PNP Power Transistors CASE TO-5/TO-39


    OCR Scan     		PDF O-5/TO-39 0-450V 2N3742 001efcV) m30040

    2N5094

    Abstract: 2N5091 2N5096 2N5093 C178T Transistor 2N5093 2N5095 2N5097
    Text: ÿ o & m l 2N5094 AND 2N5096 £ £ I D I I s)s>U»'ll 1 AMP HIGH VOLTAGE PNP TRANSISTOR 450-500 VOLTS 14830 Valley View Avenue La Mirada. Calitornia 90638 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • BVCBO TO 500 V O LTS • LOW SATURATION VOLTAGE


    OCR Scan     		PDF 2N5094 2N5096 2N5095 2N5097 2N5091 2N5093 C178T Transistor 2N5093 2N5097

    transistor 3504 npn

    Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
    Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803


    OCR Scan     		PDF Efl463S2 TMI\I515TQR rc-25Â 2N3867 2N3868 2N5147 2N5149 2N5151 2N5153 2N5148 transistor 3504 npn 2N3742 2N5150 2N5152

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711