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Central Semiconductor Corp 2N5306-TIN-LEAD TRANS NPN DARL 25V 0.3A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5306-TIN-LEAD	Bulk	3,250		1	1 $1.15 10 $0.72 100 $1.15 1000 $0.33213 10000 $0.29507	Buy Now
Central Semiconductor Corp 2N5308-PBFREE TRANS NPN DARL 40V 0.3A TO92-3
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DigiKey	2N5308-PBFREE	Bulk	2,153		1	1 $1.95 10 $1.24 100 $1.95 1000 $0.60762 10000 $0.50525	Buy Now
3M Interconnect 3S502-N530-G00-PN-500 MINI STACK CONNECTOR WIREMOUNT S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3S502-N530-G00-PN-500	Box	500		1	1 $2.21 10 $1.801 100 $1.4682 1000 $1.1971 10000 $1.125	Buy Now
Central Semiconductor Corp 2N5301-PBFREE TRANS NPN 40V 30A TO3
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DigiKey	2N5301-PBFREE	Tube	273		1	1 $7.77 10 $7.77 100 $7.77 1000 $7.77 10000 $7.77	Buy Now
Microchip Technology Inc 2N5301 NPN TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5301	Bulk			100	1 - 10 - 100 $56.9301 1000 $56.9301 10000 $56.9301	Buy Now
Mouser Electronics	2N5301					1 $61.31 10 $61.31 100 $61.31 1000 $61.31 10000 $61.31	Get Quote
Newark	2N5301	Bulk			100	1 - 10 - 100 $56.93 1000 $54.75 10000 $54.75	Buy Now
Microchip Technology Inc	2N5301			36 Weeks		1 $61.31 10 $61.31 100 $61.31 1000 $61.31 10000 $61.31	Buy Now
Onlinecomponents.com	2N5301					1 - 10 - 100 $54.36 1000 $54.36 10000 $54.36	Buy Now

NAC	2N5301	Tray			5	1 $62.56 10 $62.56 100 $57.62 1000 $53.4 10000 $53.4	Buy Now
Master Electronics	2N5301					1 - 10 - 100 $54.36 1000 $54.36 10000 $54.36	Buy Now

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2N530 Datasheets (319)

Part	Manufacturer	Description	Datasheet Type	PDF
2N530	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N530	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N530	Unknown	GE Transistor Specifications	Scan	PDF
2N530	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N530	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N530	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5301	Central Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40V 30A TO-3	Original	PDF
2N5301	On Semiconductor	POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Original	PDF
2N5301	On Semiconductor	High-Power NPN Silicon Transistor	Original	PDF
2N5301	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Original	PDF
2N5301	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5301	API Electronics	25 AMPS / 30 AMPS NPN Transistors	Scan	PDF
2N5301	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5301	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF

2N5301	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5301	General Diode	Transistor Selection Guide	Scan	PDF
2N5301	General Electric	High current, high power, high speed N-P-N power transistor. 40V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Scan	PDF
2N5301	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5301	Mospec	POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Scan	PDF
2N5301	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF

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2N530 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5306 Abstract: F63TNR MPSA14 PN2222N CBVK741B019 Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019
2N5301 Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745 Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS	Original	PDF	2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
2N5302 Abstract: 2N5302 JANTXV Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5302 O204AA) 31-Jul-02 2N5302 2N5302 JANTXV
2N5302 Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage	Original	PDF	MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV
Untitled Abstract: No abstract text available Text: 2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.	Original	PDF	2N5301 LF5301 PF5301 2N5301 LF5301Â PF5301Â
Untitled Abstract: No abstract text available Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5302 O204AA) 18-Jun-02
Untitled Abstract: No abstract text available Text: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ	Original	PDF	2N5302 2N5302/D
2N5308 Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View	Original	PDF	2N5308 100mA 200mAdc, 10Vdc, 10MHz) 300us, 2N5308
Untitled Abstract: No abstract text available Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage	Original	PDF	MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;
2N5308 Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247 Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247
2N5301 Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745 Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS	Original	PDF	2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745
2N5302 Abstract: 2N5303 jantx 2n5302 adc ic 1000C Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage	Original	PDF	2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A	Original	PDF	2N5308
2N4398 Abstract: 2N5745 4399 2N4399 2n5301 Text: Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching	Original	PDF	2N4398 2N4399 2N5745 2N5301/5302/5303 2N4398 2N4399 2N5745 4399 2n5301

b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
D38S1-4 Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	PDF	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93
TIP 110 transistor Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055 Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature	OCR Scan	PDF	2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
2N3713 Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790 Text: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914	OCR Scan	PDF	2N5067 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 2N3791 2N4399 2N4903 2N3713 2n3055 complement 2N5068 2N3055 2N3714 2N3790
D40C2 Abstract: No abstract text available Text: CENTRAL SEMICONDUCTOR fc,l D \| nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C	OCR Scan	PDF	2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2
2N5303 Abstract: SPT5303 75 watt npn switching transistor Text: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps	OCR Scan	PDF	2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor
Untitled Abstract: No abstract text available Text: ÏÏÏ 3875081 G E SOLID D!T“\| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ \| ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power	OCR Scan	PDF	0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.
2N39024 Abstract: jantx 2n5302 Text: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716' 80 10 2N39024 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60	OCR Scan	PDF	2N3715* 2N3716* 2N39024* 2N5302' 2N5303* 2N5685* 2N5686* 2N6249* 2N6250* 2N6251* 2N39024 jantx 2n5302
2N5306 NATIONAL SEMICONDUCTOR Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2	OCR Scan	PDF	D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
2N5302 Abstract: No abstract text available Text: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in	OCR Scan	PDF	2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5745 2N5301/2/3-2N4398/99-2N5745 GQS1334

2N530 Search Results

2N530 Price and Stock

Central Semiconductor Corp 2N5306-TIN-LEAD

Central Semiconductor Corp 2N5308-PBFREE

3M Interconnect 3S502-N530-G00-PN-500

Central Semiconductor Corp 2N5301-PBFREE

Microchip Technology Inc 2N5301

2N530 Datasheets (319)

2N530 Datasheets Context Search

2N5306

2N5301

2N5302

2N5302

Untitled

Untitled

Untitled

2N5308

Untitled

2N5308

2N5301

2N5302

Untitled

2N4398

b1375

D38S1-4

TIP 110 transistor

2N3713

D40C2

2N5303

Untitled

2N39024

2N5306 NATIONAL SEMICONDUCTOR

2N5302