2SC5024
Abstract: 2SA1810 2SA1889 2SA1889B 2SA1889C
Text: 2SA1889 Silicon PNP Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SA1889
126FM
2SC5024
2SA1810.
2SC5024
2SA1810
2SA1889
2SA1889B
2SA1889C
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PDF
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Hitachi 2SA
Abstract: Hitachi DSA001650
Text: 2SA1889 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SA1889
2SC5024
O-126FM
D-85622
Hitachi 2SA
Hitachi DSA001650
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PDF
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2SA1810
Abstract: 2SA1889 2SA1889B 2SA1889C 2SC5024 Hitachi 2SA Hitachi DSA00493
Text: 2SA1889 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SA1889
2SC5024
2SA1810
2SA1889
2SA1889B
2SA1889C
2SC5024
Hitachi 2SA
Hitachi DSA00493
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PDF
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2sc5024
Abstract: Hitachi 2SA Hitachi DSA00164
Text: 2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier
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Original
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2SC5024
2SA1889
O-126FM
D-85622
2sc5024
Hitachi 2SA
Hitachi DSA00164
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PDF
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2SC5024
Abstract: 2SC5024B 2SA1889 2SC4704 2SC5024C Hitachi DSA00493
Text: 2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier
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Original
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2SC5024
2SA1889
2SC5024
2SC5024B
2SA1889
2SC4704
2SC5024C
Hitachi DSA00493
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PDF
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2SC5024
Abstract: 2SA1889 2SC4704 2SC5024B 2SC5024C
Text: 2SC5024 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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Original
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2SC5024
126FM
2SA1889
2SC4704.
2SC5024
2SA1889
2SC4704
2SC5024B
2SC5024C
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PDF
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Untitled
Abstract: No abstract text available
Text: I HITACHI 2SA1889 Silicon PNP Epitaxial Application TO-126FM High frequency amplifier Features f 'W • Excellent high frequency characteristics f j = 300 M Hz typ • High voltage and low output capacitance v ceo t = - 200 v > Cob = 5 0 pf typ 2 • Suitable for wide band video amplifier
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OCR Scan
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2SA1889
O-126FM
2SA1889B
2SA1889C
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1889 Silicon PNP Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High voltage and low output capacitance V CE0 = -2 0 0 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SA1889
2SC5024
O-126FM
2SA1889B
2SA1889C
2SA1810.
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1889 Silicon PNP Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High voltage and low output capacitance VCE0 = -200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SA1889
2SC5024
O-126FM
D-85622
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5024 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High breakdown voltage and low output capacitance V CE0 = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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OCR Scan
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2SC5024
2SA1889
2SC5024B
2SC5024C
2SC4704.
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PDF
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5024 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCE0 = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier
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OCR Scan
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2SC5024
2SA1889
D-85622
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5024 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT= 300 MHz typ High breakdown voltage and low output capacitance VCEO= 200 V. Cob = 5.0 pF typ Suitable for wide band video amplifier
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OCR Scan
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2SC5024
2SA1889
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PDF
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2sk408
Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB
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OCR Scan
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HA21008
HA22012
HA22022
HA22016
MSP-18
HA21001MS
16dBtyp
1SD1133
2SD1134
2SD1135
2sk408
2SK2794
2sk409
2SK1999
ha22002
2SD669A
2SK2595
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PDF
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