Toshiba transistor A1939
Abstract: a1939 2SA1939 2SC5196 40w amplifier
Text: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristics
|
Original
|
2SA1939
2SC5196
2-16C1A
Toshiba transistor A1939
a1939
2SA1939
2SC5196
40w amplifier
|
PDF
|
2SA1939
Abstract: 2SC5196 2SC519
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications
|
Original
|
2SA1939
2SC5196
2SA1939
2SC5196
2SC519
|
PDF
|
2SA1939
Abstract: 2SC5196 SC-65
Text: 2SC5196 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1939 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
|
Original
|
2SC5196
SC-65
2SA1939
2SA1939
2SC5196
SC-65
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: Inchange Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5196 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage
|
Original
|
2SA1939
2SC5196
2SA1939
2SC5196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: J. , L nc. C/ TELEPHONE: 973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1939 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- I1 : VCE(«t)= -2.0V(Min) @lc= -5A • Good Linearity of MFE
|
Original
|
2SA1939
2SC51
-50mA
|
PDF
|
Toshiba transistor A1939
Abstract: No abstract text available
Text: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristics
|
Original
|
2SA1939
2SC5196
2-16C1A
Toshiba transistor A1939
|
PDF
|
a1939
Abstract: Toshiba transistor A1939 2SA1939 2SC5196
Text: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Maximum Ratings Tc = 25°C Characteristics
|
Original
|
2SA1939
2SC5196
a1939
Toshiba transistor A1939
2SA1939
2SC5196
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: JMnic Product Specification 2SA1939 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5196 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage
|
Original
|
2SA1939
2SC5196
2SA1939
2SC5196
|
PDF
|
c5196
Abstract: Transistor C5196 Toshiba transistor c5196 2SA1939 2SC5196
Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics
|
Original
|
2SC5196
2SA1939
c5196
Transistor C5196
Toshiba transistor c5196
2SA1939
2SC5196
|
PDF
|
2SA1939
Abstract: 2SC5196 SC-65
Text: 2SA1939 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SC5196 ABSOLUTE MAXIMUM RATING Ta=25°c c Characteristic Collector-Base Voltage Collector-Emitter Voltage
|
Original
|
2SA1939
SC-65
2SC5196
2SA1939
2SC5196
SC-65
|
PDF
|
2SC4793 2sa1837
Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688
|
Original
|
2SC1627A
2SA817A
2SC2235
2SA965
2SC3665
2SA1425
2SC5174
2SA1932
2SC3423
2SA1360
2SC4793 2sa1837
100 amp npn darlington power transistors
2sC5200, 2SA1943
10 amp npn darlington power transistors
2sC5200, 2SA1943, 2sc5198
2SC4684 datasheets
2sa1930 transistor equivalent
2sc5200
2SB906-Y
2sc3303
|
PDF
|
c5196
Abstract: Toshiba transistor c5196 Transistor C5196 2SA1939 2SC5196
Text: 2SC5196 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5196 Power Amplifier Applications Unit: mm • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics
|
Original
|
2SC5196
2SA1939
c5196
Toshiba transistor c5196
Transistor C5196
2SA1939
2SC5196
|
PDF
|
2SC5196
Abstract: 2SA1939
Text: SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
|
Original
|
2SC5196
2SA1939
2SC5196
2SA1939
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: SavantIC Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5196 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
|
Original
|
2SA1939
2SC5196
2SA1939
2SC5196
|
PDF
|
|
|
2SA1939
Abstract: 2SC5196 T10C
Text: 2SA1939 TO SH IBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C
|
OCR Scan
|
2SA1939
2SC5196
2-16C1A
55transportation
2SA1939
T10C
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: AOK AOK Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION • With TO-3P l packagc • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage
|
OCR Scan
|
2SA1939
2SC5196
|
PDF
|
2SC5196
Abstract: 2SA1939
Text: 2SC5196 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 96 POWER AMPLIFIER APPLICATIONS • • Unit in mm Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
|
OCR Scan
|
2SC5196
2SA1939
2SC5196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5196 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 96 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • • 03.2 ± 0 .2 Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage.
|
OCR Scan
|
2SC5196
2SA1939
2-16C1A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1939 SILICON PNP EPITAXIAL TY P E POW ER AMPLIFIER APPLICATIONS. • • U n it in m m Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SA1939
2SC5196
--10V,
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: 2SA1939 TO SH IBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C
|
OCR Scan
|
2SA1939
2SC5196
2-16C1A
2SA1939
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1939 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS 15.9 MAX. 03.2 ± 0.2 Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier O n fc rm t É0 S fa c rp M A X IM U M RATINGS Ta = 25°C
|
OCR Scan
|
2SA1939
2SC5196
2-16C1A
--50mA
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: TOSHIBA 2SC5196 2 S C 5 1 96 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X. '— • Complementary to 2SA1939 • Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ±0.2
|
OCR Scan
|
2SC5196
2SA1939
2-16C1A
2SA1939
2SC5196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5196 TOSHIBA TRANSISTOR 2 SILICON NPN TRIPLE DIFFUSED TYPE S C 5 1 9 6 Unit in mm POWER AMPLIFIER APPLICATIONS 15.9 MAX. 03.2 ± 0.2 Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier É0 O n fc rm t S fa c rp MAXIMUM RATINGS Ta = 25°C
|
OCR Scan
|
2SC5196
2SA1939
2-16C1A
|
PDF
|
2SA1939
Abstract: 2SC5196
Text: TOSHIBA 2SC5196 2 S C 5 1 96 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm J 5.9M A X^ • • 03.2 ±0.2 Complementary to 2SA1939 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. M A XIM U M RATINGS Ta=25°C
|
OCR Scan
|
2SC5196
2SA1939
2SC5196
|
PDF
|
