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    2SB0938A Search Results

    2SB0938A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB0938A Panasonic PNP Transistor Darlington Original PDF
    2SB0938A Panasonic Silicon PNP epitaxial planar type Darlington power transistor Original PDF
    2SB0938A Panasonic TRANS DARLINGTON PNP 80V 4A 3N-G1 Original PDF
    2SB0938AP Panasonic TRANS DARLINGTON PNP 80V 4A 3N-G1 Original PDF
    2SB0938AQ Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF

    2SB0938A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current


    Original     		PDF 2SB0938, 2SB0938A 2SB938, 2SB938A) 2SD1261 2SD1261A 2SB0938 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 1.0±0.1 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V −80 −60 VCEO Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    SILICON COMPLEMENTARY transistors darlington

    Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol


    Original     		PDF 2SB0938 2SB938) 2SB0938A 2SB938A) SILICON COMPLEMENTARY transistors darlington 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 2SB938 and 2SB0938A (2SB938A) • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


    Original     		PDF 2SD1261, 2SD1261A 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Unit VCBO −60 V 2 −80 Collector-emitter voltage 2SB0938


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 2 (7.6) Collector-base voltage 1 Symbol 0 to 0.4


    Original     		PDF 2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SD1261

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		PDF 2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SD1261A

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		PDF 2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SB0938 2SB0938A 2SD1261 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open 2SD1261 Symbol Rating Unit VCBO 60 V 2SD1261A


    Original     		PDF 2SD1261, 2SD1261A 2SD1261 2SB0938 2SB0938A 2SD1261 2SD1261A