B1016A
Abstract: No abstract text available
Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)
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2SB1016A
2SD1407A
2-10R1A
B1016A
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2SB1016A
Abstract: B1016 B1016A
Text: 2SB1016A 東芝トランジスタ シリコンPNP三重拡散形 2SB1016A ○ 電力増幅用 単位: mm • 高耐圧です。 • 飽和電圧が小さい。: VCE sat = −2.0 V (最大) : VCEO = 100 V 絶対最大定格 (Tc = 25°C) 項 目 記 号 定
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2SB1016A
2-10R1A
20070701-JA
2SB1016A
B1016
B1016A
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D1407
Abstract: No abstract text available
Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A
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2SD1407A
2SB1016A
2-10R1A
D1407
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D1407A
Abstract: D1407 2SD1407A 2SB1016A
Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A
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2SD1407A
2SB1016A
D1407A
D1407
2SD1407A
2SB1016A
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D1407
Abstract: D1407A 2SB1016A 2SD1407A
Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A
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2SD1407A
2SB1016A
D1407
D1407A
2SB1016A
2SD1407A
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D1407A
Abstract: D1407 2SD1407A 2SB1016A
Text: 2SD1407A 東芝トランジスタ シリコンNPN三重拡散 2SD1407A 通 信 工 業 用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。
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2SD1407A
2SB1016A
2-10R1A
D1407A
D1407
2SD1407A
2SB1016A
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B1016A
Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A
Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)
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2SB1016A
2SD1407A
B1016A
2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SD1407A
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2SB1016A
Abstract: 2SD1407A B1016A
Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)
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2SB1016A
2SD1407A
2SB1016A
2SD1407A
B1016A
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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2sC5200, 2SA1943
Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4
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TTC003
SC-64)
BCJ0016F
BCJ0016E
2sC5200, 2SA1943
TPCP8L01
TPCP8602
2sC5200 2SA1943
2sc5200
TTC003
2SC4793 2sa1837
2sC5200, 2SA1943, 2sc5198
TTC13003L
2SC3180N
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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2SD1407
Abstract: 2SB1016A toshiba 2sd1407 2SD1407A
Text: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A
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2SB1016A
--100V
2SD1407A
2SD1407
2SB1016A
toshiba 2sd1407
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2SB1016A
Abstract: 2SD1407A
Text: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0
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2SD1407A
2SB1016A
2SB1016A
2SD1407A
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toshiba 2sd1407a
Abstract: 2SB1016A 2SD1407A
Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A
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2SD1407A
2SB1016A
toshiba 2sd1407a
2SB1016A
2SD1407A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A
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2SD1407A
2SB1016A
10hts
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2SB1016A
Abstract: toshiba 2sd1407 2SD1407A
Text: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A
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2SB1016A
--100V
2SD1407A
2SB1016A
toshiba 2sd1407
2SD1407A
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2SB1016A
Abstract: 2SD1407A
Text: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A
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2SD1407A
2SB1016A
2SB1016A
2SD1407A
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SB1016A TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A PO W ER AM PLIFIER APPLICATIO NS U n it in m m 10 ±0.3 • High Breakdown Voltage : V q e q = —100V • Low Collector-Emitter Saturation Voltage 2.7±0.2 $ 5 : v C E s a t = - 2'° v (Max.)
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2SB1016A
2SD1407A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS U n it in mm • • High Breakdown Voltage : V cEO “ —100V Low Collector-Emitter Saturation Voltage : VCE sat = -2.0V (Max.) • Com plem entary to 2SD1407A
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2SB1016A
--100V
2SD1407A
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SB1016A
Abstract: 2SB1016A 2SD1407A
Text: TO SH IBA 2SB1016A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A
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2SB1016A
--100V
2SD1407A
SB1016A
2SB1016A
2SD1407A
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Untitled
Abstract: No abstract text available
Text: 2SD1407A TO SHIBA 2SD1407A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AM PLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V q e q = 100V Low Collector Saturation Voltage : V ^ g s a t ~ 2.0V (Max.)
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2SD1407A
2SB1016A
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