2SB1241 Search Results

2SB1241 Price and Stock

Filter by Manufacturer


ROHM Semiconductor 2SB1241TV2Q TRANS PNP 80V 1A ATV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1241TV2Q	Ammo Pack			2,500	1 - 10 - 100 - 1000 - 10000 $0.20967	Buy Now
ROHM Semiconductor 2SB1241TV2R TRANS PNP 80V 1A ATV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1241TV2R	Ammo Pack			2,500	1 - 10 - 100 - 1000 - 10000 $0.20967	Buy Now

2SB1241 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1241	ROHM	Power Transistor (- 80V, -1A)	Original	PDF
2SB1241	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1241	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1241	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1241	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1241	ROHM	Power Transistor (-80V, -1A)	Scan	PDF
2SB1241	ROHM	ATR, ATV Transistors	Scan	PDF
2SB1241	ROHM	ATR / ATV Transistors	Scan	PDF
2SB1241TV2Q	ROHM	Power Transistor (-80 V, -1 A)	Original	PDF
2SB1241TV2Q	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 1A ATV	Original	PDF
2SB1241TV2R	ROHM	Power Transistor (-80 V, -1 A)	Original	PDF
2SB1241TV2R	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 1A ATV	Original	PDF

2SB1241 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB1181 Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated	Original	PDF	2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898
2SB1181 Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100 Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+	Original	PDF	2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SB1241 2SD1733 T100
Untitled Abstract: No abstract text available Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 9.5±0.5 0.9 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 −0.1 4.0 ±0.3 2.5+0.2 −0.1 (3)	Original	PDF	2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260
Untitled Abstract: No abstract text available Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated	Original	PDF	2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260
transistor b54 Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor Text: Transistors Power Transistor 80V, 1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = 80V, IC = 1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)	Original	PDF	2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 96-123-B54) transistor b54 transistor 222 2sB1241 2SD1733 high hfe transistor
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181	Original	PDF	2SD1898 2SB1260/2SB1241/2SB1181 50uAdc) 80Vdc) 500mA/20mA) 10Vdc, 50mAdc, 100MHz)
silan Abstract: No abstract text available Text: 2SB124100MA 2SB124100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø	Original	PDF	2SB124100MA 2SB124100MA 2SB124100MAYY 161dice/wafer silan
Untitled Abstract: No abstract text available Text: 2SB124100ML 2SB124100ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124100ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching	Original	PDF	2SB124100ML 2SB124100ML 2SB124100MLYY
Untitled Abstract: No abstract text available Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181	Original	PDF	2SD1898 2SB1260/2SB1241/2SB1181 OT-89 500mA/20mA) 10Vdc, 50mAdc, 100MHz) 40x40x0
2SB1241 Abstract: No abstract text available Text: SPICE PARAMETER 2SB1241 by ROHM TR Div. * 2SB1241 PNP BJT model * Date: 2006/12/04 .MODEL 2SB1241 PNP + IS=220.00E-15 + BF=140.43 + VAF=23.200 + IKF=7.9366 + ISE=220.00E-15 + NE=1.6291 + BR=30.282 + VAR=100 + IKR=13.783 + ISC=274.44E-12 + NC=1.5976 + NK=.83042	Original	PDF	2SB1241 Q2SB1241 00E-15 44E-12 000E-3 85E-12 315E-12 69E-12 2SB1241
NPN transistor 2sd1863 Abstract: 80V 1A NPN Transistor 2SB1260 2SD1733 2SD1768S 2SD1898 2SB1181 2SD1863 Vceo 80V Ic 1A 2SB1241 Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)	Original	PDF	2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F NPN transistor 2sd1863 80V 1A NPN Transistor 2SB1181 Vceo 80V Ic 1A
80V 1A NPN Transistor Abstract: 2SD1898 2SD1768S NPN transistor 2sd1863 2SD1768 2SD1863 2SB1181 2SD1733 2SB1241 2SB1260 Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)	Original	PDF	2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 80V 1A NPN Transistor NPN transistor 2sd1863 2SD1768 2SB1181
Untitled Abstract: No abstract text available Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated	Original	PDF	2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63
Untitled Abstract: No abstract text available Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 9.5±0.5 0.3 5.5+	Original	PDF	2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260

2SB1181 Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated	Original	PDF	2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 SC-62 SC-63 2SB1241 2SD1733 2SD1863 2SD1898
SC 2502 Abstract: 2SB1181 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100 Text: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.4+0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 9.5±0.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 1.5 0.9 0.3	Original	PDF	2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 SC 2502 2SB1241 2SD1733 T100
transistor 0401 Abstract: 2SB1241 Text: Power Transistor 80V, 1A 2SB1260 / 2SB1181 / 2SB1241 Dimensions (Unit : mm) 2SB1260 2SB1181 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor 0.4+0.1 9.5±0.5 2.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 1.5 0.9 5.5+0.3 (3) 0.5±0.1	Original	PDF	2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 2SB1260 2SB1181 SC-62 SC-63 transistor 0401 2SB1241
2SB1181 Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898 T100 Text: Power Transistor 80V, 1A 2SB1260 / 2SB1181 / 2SB1241 Dimensions (Unit : mm) 2SB1260 2SB1181 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 9.5±0.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1	Original	PDF	2SB1260 2SB1181 2SB1241 2SB1260 2SB1181 2SD1898 2SD1863 2SD1733. R0039A 2SB1241 2SD1733 T100
2SD1733 Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72 Text: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V	Original	PDF	2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1181 2SB1241 2SD1863 SC-72
ScansU9X27 Abstract: No abstract text available Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)	OCR Scan	PDF	2SB1260/2SB1181/2SB1241 2SD1898/ 2SD1863/2SD1733. 2SB1260 2SB1241, 2SB1181 ScansU9X27
BH rn transistor Abstract: ROHM 2SD1733 2sb1241 Text: Transistors Power Transistor -80V, -1A 2SB1260/2SB1181/2SB1241 current. •E x te rn a l dimensions (Units: mm) 2SB1260 2SB1181 co V oeo = - 8 0 V , to = - 1 A C0.5 / lO 2) Good hFE linearity. 3) 21 6 . 5 ± 0 .2 +0.2 2 3 ~ 0.1 0 .5 + 0 .1 c + 0 .2 5 - 0 .1	OCR Scan	PDF	2SB1260/2SB1181/2SB1241 2SB1260 2SB1181 2SD1898/ 2SD1863/2SD1733. SC-62 SC-63 2SB1260) 2SB1241) BH rn transistor ROHM 2SD1733 2sb1241
2SB1181 Abstract: 2SB1241 2SB1260 2SD1898 Text: 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor -80V, -1 A 2SB1260 / 2SB1241 •External dimensions (Units : mm) •Features 1) High breakdown voltage and high current. B V ceo = -8 0 V , lc = -1 A 2) Good hFE linearity. 3 ) LOW VcE(sat).	OCR Scan	PDF	2SB1260 2SB1181 /2SB1241 2SB1260/2SB1181 2SD1898 2SD186312SD1733. 2SB1260 2SB1181 SC-62 2SB1241
b1241 Abstract: 2SD189 Text: Transistors Power Transistor -80V , -1A 2SB1260/2SB1181/2SB1241 # F e a tu re s • E x te rn a l dim ensions (Units: mm) 1) H igh breakdow n voltage and high current. V ceo = —80V, Ic = —1A 2) G ood hFE linearity. 3) Low VcE(sat). 4) C om plem ents the 2SD189 8/	OCR Scan	PDF	2SB1260/2SB1181/2SB1241 --80V, 2SD189 2SD1863/2SD1733. 96-123-B54) 2SB126 O-220, 0Dlb713 O-220FN b1241
2SB909M Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130 Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p	OCR Scan	PDF	2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130

Privacy Settings

2SB1241 Search Results

2SB1241 Price and Stock

ROHM Semiconductor 2SB1241TV2Q

ROHM Semiconductor 2SB1241TV2R

2SB1241 Datasheets (12)

2SB1241 Datasheets Context Search

2SB1181

2SB1181

Untitled

Untitled

transistor b54

Untitled

silan

Untitled

Untitled

2SB1241

NPN transistor 2sd1863

80V 1A NPN Transistor

Untitled

Untitled

2SB1181

SC 2502

transistor 0401

2SB1181

2SD1733

ScansU9X27

BH rn transistor

2SB1181

b1241

2SB909M