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Toshiba America Electronic Components 2SB1667-Y(T4LNSEIQ
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Quest Components	2SB1667-Y(T4LNSEIQ		1,581			1 $1.785 10 $1.785 100 $1.785 1000 $0.714 10000 $0.6248	Buy Now
Toshiba America Electronic Components 2SB1667(TE24L)
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Quest Components	2SB1667(TE24L)		650			1 $1.35 10 $1.35 100 $0.675 1000 $0.54 10000 $0.54	Buy Now
Toshiba America Electronic Components 2SB1667-Y Electronic Component
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2SB1667 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1667	Kexin	Silicon PNP Triple Diffused Type	Original	PDF
2SB1667	TY Semiconductor	Silicon PNP Triple Diffused Type - TO-252	Original	PDF
2SB1667	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1667	Toshiba	TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)	Scan	PDF
2SB1667(SM)	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: Y; Package: TO-220(SM); Number Of Pins: 3; Publication Class: Low-Frequency Power Transistor	Original	PDF
2SB1667SM	Unknown	PNP transistor	Scan	PDF
2SB1667(SM)	Toshiba		Scan	PDF
2SB1667SM	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF

2SB1667 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B1667 Abstract: 2SB1667 Text: 2SB1667 SM 東芝トランジスタシリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項目記号	Original	PDF	2SB1667 2-10S2A 20070701-JA B1667
B1667 Abstract: 2SB1667 W301 Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SB1667 B1667 W301
Untitled Abstract: No abstract text available Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SB1667 2-10S2A
B1667 Abstract: 2SB1667 Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SB1667 B1667
Untitled Abstract: No abstract text available Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SB1667
2SB1667 Abstract: No abstract text available Text: Transistors SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm	Original	PDF	2SB1667 O-252 -50mA, 2SB1667
B1667 Abstract: 2SB1667 Text: 2SB1667 SM 東芝トランジスタシリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項目記号	Original	PDF	2SB1667 2-10S2A B1667
Untitled Abstract: No abstract text available Text: Product specification 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm +0.1 -0.1 +0.25 2.65 -0.1 6.50 +0.2 5.30-0.2	Original	PDF	2SB1667 O-252 -50mA,
B1667 Abstract: 2SB1667 GENERAL SEMICONDUCTOR MARKING SM Text: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	PDF	2SB1667 B1667 GENERAL SEMICONDUCTOR MARKING SM
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	PDF	2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	PDF	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	PDF	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	PDF	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
2SB1667 Abstract: No abstract text available Text: TO SH IBA 2SB1667 SM TO SH IB A TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = - 3 A, IB = -0 .3 A) 10.3M A X.	OCR Scan	PDF	2SB1667 2-10S2 961001EAA1
2SB1667 Abstract: No abstract text available Text: TOSHIBA 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VCE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*	OCR Scan	PDF	2SB1667
Untitled Abstract: No abstract text available Text: TOSHIBA 2SB1667ÇSM T O SH IBA TRA NSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 S M ) Unit in mm A U D IO FREQUENCY P O W ER A M PLIFIER APPLICATIO NS • Low Collector Saturation Voltage : VCE (sat) = -1 .7 V (Max.) (IC = - 3 A, IB = -0 .3 A) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	2SB1667Ã 961001EAA1
Untitled Abstract: No abstract text available Text: 2SB1667 SM TO SHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VCE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	2SB1667 961001EAA1
2sb 667 Abstract: 2SB1667 Text: 2SB1667 SM TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*	OCR Scan	PDF	2SB1667 2-10S2 2sb 667
2SB1667 Abstract: transistor sm Text: 2SB1667 SM TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*	OCR Scan	PDF	2SB1667 transistor sm
Untitled Abstract: No abstract text available Text: TO SH IB A TENTATIVE 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage : VCE (sat) = —1.7V (Max.) (IC = - 3 A , Iß — —0.3A) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	2SB1667 ----10Vf 20/zs
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266

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2SB1667 Price and Stock

Toshiba America Electronic Components 2SB1667-Y(T4LNSEIQ

Toshiba America Electronic Components 2SB1667(TE24L)

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2SB1667 Datasheets (8)

2SB1667 Datasheets Context Search

B1667

B1667

Untitled

B1667

Untitled

2SB1667

B1667

Untitled

B1667

transistor

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2SA1930 2sc5171

GT45F122

2SB1667

2SB1667

Untitled

Untitled

2sb 667

2SB1667

Untitled

2SC144