2SA1077
Abstract: 2SC2527
Text: Inchange Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers
|
Original
|
PDF
|
2SA1077
O-220
2SC2527
O-220)
-120V;
10MHz
2SA1077
2SC2527
|
2SC288a
Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 2SC252 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)
|
Original
|
PDF
|
2SC252
Freq900M
|
2SA1072
Abstract: 2SA1073 2SC2522
Text: JMnic Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2522/2523 ・Excellent safe operating area ・Fast switching speed APPLICATIONS ・High frequency power amplifier ・Audio power amplifiers
|
Original
|
PDF
|
2SA1072
2SA1073
2SC2522/2523
2SA1072
collect120V;
-120V;
2SA1073
2SC2522
|
2SC2525
Abstract: 2SA1075 "Audio Power Amplifiers" audio power amplifiers with transistors
Text: Inchange Semiconductor Product Specification 2SC2525 Silicon NPN Power Transistors • DESCRIPTION ·With MT-200 package ·Complement to type 2SA1075 ·Excellent safe operating area ·Ultra fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers,
|
Original
|
PDF
|
2SC2525
MT-200
2SA1075
MT-200)
2SC2525
2SA1075
"Audio Power Amplifiers"
audio power amplifiers with transistors
|
Untitled
Abstract: No abstract text available
Text: 2SC2527 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
PDF
|
2SC2527
Freq80M
time300nÃ
|
2SA1077
Abstract: 2SC2527
Text: SavantIC Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers
|
Original
|
PDF
|
2SA1077
O-220
2SC2527
O-220)
-120V;
10MHz
2SA1077
2SC2527
|
2SA1073
Abstract: 2SC2522 2SA1072
Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION •With TO-3 package ·Complement to type 2SC2522/2523 ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·High frequency power amplifier
|
Original
|
PDF
|
2SA1072
2SA1073
2SC2522/2523
2SA1072
-160V;
2SA1073
2SC2522
|
2SA1075
Abstract: 2SC2526 2SA1076 2SC2525 2sa1076 2sc2526 2sa1076 equivalent IC BASE
Text: Product Specification www.jmnic.com 2SA1075 2SA1076 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・Complement to type 2SC2525,2SC2526 ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers
|
Original
|
PDF
|
2SA1075
2SA1076
MT-200
2SC2525
2SC2526
MT-200)
2SA1075
-120V;
2SC2526
2SA1076
2sa1076 2sc2526
2sa1076 equivalent
IC BASE
|
2SC2528
Abstract: 2SA1078
Text: SavantIC Semiconductor Product Specification 2SA1078 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2528 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers and drivers
|
Original
|
PDF
|
2SA1078
O-220
2SC2528
O-220)
-120V;
10MHz
2SC2528
2SA1078
|
2SC2529
Abstract: 2SA1079
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2529 APPLICATIONS
|
Original
|
PDF
|
2SA1079
-160V
2SC2529
-160V;
10MHz
2SC2529
2SA1079
|
2SC2528
Abstract: 2SA1078
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 APPLICATIONS
|
Original
|
PDF
|
2SA1078
-120V
2SC2528
-120V;
10MHz
2SC2528
2SA1078
|
2SC2528
Abstract: 2SA1078
Text: Inchange Semiconductor Product Specification 2SA1078 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2528 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers and drivers
|
Original
|
PDF
|
2SA1078
O-220
2SC2528
O-220)
-120V;
10MHz
2SC2528
2SA1078
|
2SC2526
Abstract: 2SA1076 2SA107 2sa1076 equivalent 2SC2525 2SA1075 "Audio Power Amplifiers" 2sa1076 2sc2526
Text: Inchange Semiconductor Product Specification 2SA1075 2SA1076 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC2525,2SC2526 ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers
|
Original
|
PDF
|
2SA1075
2SA1076
MT-200
2SC2525
2SC2526
MT-200)
-12160V;
2SA1075
-120V;
2SC2526
2SA1076
2SA107
2sa1076 equivalent
"Audio Power Amplifiers"
2sa1076 2sc2526
|
|
|
2SA1078
Abstract: 2SC2528
Text: JMnic Product Specification 2SA1078 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2528 ・High transition frequency ・Excellent safe operating area APPLICATIONS ・High-frequency power amplifier ・Audio power amplifiers and drivers
|
Original
|
PDF
|
2SA1078
O-220
2SC2528
O-220)
-120V;
10MHz
2SA1078
2SC2528
|
2SC2523
Abstract: 2SA1073
Text: SavantIC Semiconductor Product Specification 2SC2523 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators
|
Original
|
PDF
|
2SC2523
2SA1073
10MHz
2SC2523
2SA1073
|
ltsj
Abstract: 2SC2623 2SC25 2SC2522 2SC2522A fujitsu ring emitter 2sc2523 15CF
Text: FUJITSU MICROELECTRONICS 31E D B 37417b2 DDlbSlfl 3 EI F M I -r- 2 2 - 1 3 FUJITSU fS if° : PR O D UC T P R O F I L E — . * 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN general purpose, high pow er
|
OCR Scan
|
PDF
|
37417b2
2SC2522,
2C2522A,
2C2523
2SC2522/2SC2522A/2SC2523
2SC2522/2SC25
/2SC2523
ltsj
2SC2623
2SC25
2SC2522
2SC2522A
fujitsu ring emitter 2sc2523
15CF
|
2SC2527
Abstract: 2SA1077
Text: AOK AOK Semiconductor P ro d u ct S pecification 2SA1077 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC2527 • High transition frequency • Excellent safe operating area APPLICATIONS • High-frequency power amplifier
|
OCR Scan
|
PDF
|
2SA1077
O-220
2SC2527
O-220)
Coll12CV;
10MHz
I300t0
2SC2527
|
2SA1072
Abstract: 2SA1073 2SC2522
Text: AOK AOK Semiconductor Product Specification 2SA1072 2SA1073 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2SC2522/2523 • Excellent safe operating area • Fast switching speed APPLICATIONS • High frequency power amplifier
|
OCR Scan
|
PDF
|
2SA1072
2SA1073
2SC2522/2523
2SA1073
10MHz
2SC2522
|
2Sc2525
Abstract: 2SC2526
Text: January 1990 Edition 1.1 — - FUJITSU PRODUCT PROFILE 2SC2525, 2SC2526 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon N P N general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor { R E T te c h
|
OCR Scan
|
PDF
|
2SC2525,
2SC2526
2SC2526
2Sc2525
|
transistor DA 3309
Abstract: lc07a 2SC2528 2SA1078 bv 3309 AC 128 pnp transistor
Text: FUJITSU MICROELECTRONICS 31E D E3 374T7L5 ÜQlt.524 =1 EBFNI cP • January 1990 Edition 1.1 »T H iT n rU J llb U PRODUCTPROFILE: - T * 2SC2528 Silicon High Speed Power Transistor_ DESCRIPTION The 2SC2528 Is a silicon NPN general purpose, medium power transistor fabricated
|
OCR Scan
|
PDF
|
374T7L5
2SC2528
2SC2528
2SA1078,
transistor DA 3309
lc07a
2SA1078
bv 3309
AC 128 pnp transistor
|
2SC2522
Abstract: fujitsu ring emitter 2sc2523 c1507 2SA1073
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION The 2SC2522/2SC2522A/2SC2523 are silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transiter RET
|
OCR Scan
|
PDF
|
2SC2522,
2C2522A,
2C2523
2SC2522/2SC2522A/2SC2523
10MHz
300us;
2SC2S22A
2SC2522A,
2SC2522
fujitsu ring emitter 2sc2523
c1507
2SA1073
|
2SC2528
Abstract: No abstract text available
Text: _ _ _ ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC2528 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 8 is a silicon N P N general purpose, m edium po w e r transistor fabricated w ith Fujitsu's u nique Ring E m itte r Transistor R E T technology. R E T devices are
|
OCR Scan
|
PDF
|
2SC2528
300ys
2SC2528
|
2SC2527
Abstract: fujitsu DC-DC a1077 NPN transistor 2527
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T
|
OCR Scan
|
PDF
|
2SC2527
10MHz
2SC2527
fujitsu DC-DC
a1077
NPN transistor 2527
|
