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    2SC2879 Search Results

    2SC2879 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2879 Advanced Semiconductor Transistor Original PDF
    2SC2879 Toshiba Silicon NPN transistor for 2-30MHz SSB linear power amplifier applications (low supply voltage use) Original PDF
    2SC2879 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2879 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2879 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2879 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2879 Unknown Silicon NPN 2-30 MHz Linear Power amplifier Scan PDF
    2SC2879 Unknown Scan PDF
    2SC2879 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2879 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2879 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2879 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2879 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2879 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2879 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC2879A Toshiba SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Original PDF

    2SC2879 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2879

    Abstract: 2sc2879 transistor
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency


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    PDF 2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 transistor

    2SC2879A

    Abstract: 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


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    PDF 2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879A 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879

    2SC2879

    Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


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    PDF 2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879 toshiba 2sc2879 2SC2879A 2sc2879 equivalent

    S-AV17

    Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


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    PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079

    toshiba 2sc2879

    Abstract: 2sc2879 equivalent
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


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    PDF 2SC2879A 30MHz 28MHz 100WPEP -24dB 13Besented toshiba 2sc2879 2sc2879 equivalent

    2SC2879

    Abstract: 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency


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    PDF 2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector

    S-AU80

    Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
    Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors


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    PDF 10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic

    2SC2879

    Abstract: 2sc2879 equivalent 2sc2879 transistor ASI 2SC2879
    Text: 2SC2879 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • PG = 13 Typ. min. at 100 W/28 MHz


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    PDF 2SC2879 2SC2879 112x45° 2sc2879 equivalent 2sc2879 transistor ASI 2SC2879

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


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    PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


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    PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


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    PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


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    PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    toshiba 2sc2879

    Abstract: 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor
    Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Power Gain Po = lOOWpEP Gp = 13dB 7 c = 35%(Min.) Collector Efficiency


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    PDF 2SC2879 30MHz 28MHz 100mA 961001EAA2' toshiba 2sc2879 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor

    100WPEP

    Abstract: Ferrite core TDK D1S1555
    Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p


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    PDF 2SC2879 2-30MHZ 28MHz 100Wp --24dB 1S1555 961001E 100WPEP Ferrite core TDK D1S1555

    100WPEP

    Abstract: 2SC2879 2sc2879 equivalent
    Text: SILICON NPN EPITAXIAL PLAN AR TY P E 2SC2879 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in m m LOW SUPPLY VOLTAGE USE FEATURES : . S p e c i f i e d 1 2 .5 V, : Output Power : Minimum Gain : Efficiency 28MHz Characteristics : P o=100WpEP : Gpe=10dB


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    PDF 2SC2879 -30MHz 28MHz 100WpEP 150pF 022AF 47/iF 044/uF 100WPEP 2SC2879 2sc2879 equivalent

    toshiba 2sc2879

    Abstract: 2SC2879 CB LINEAR CIRCUIT IS1555 2SC2879 2sc2879 equivalent 50wv 10ID 1S1555
    Text: TOSHIBA 2SC2879 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS L O W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = lOOWpEP Power Gain Gp = 13dB


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    PDF 2SC2879 30MHz 28MHz C10WV 1S1555 000MHz 001MHz 100mA toshiba 2sc2879 2SC2879 CB LINEAR CIRCUIT IS1555 2SC2879 2sc2879 equivalent 50wv 10ID 1S1555

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f 9R7Q Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS LO W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = lOOWpEP Power Gain Gp = 13dB Collector Efficiency


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    PDF 2SC2879 30MHz 28MHz 2-13B1A 100mA, 1S1555 150pF 150pF 022//F

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503