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    Toshiba America Electronic Components 2SC3072-B(T6L1,NQ)

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    2SC3072 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3072 Kexin Silicon NPN Epitaxial Original PDF
    2SC3072 Toshiba Silicon NPN Transistor Original PDF
    2SC3072 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3072 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3072 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3072 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3072 Unknown Scan PDF
    2SC3072 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3072 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3072 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3072 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3072 Toshiba Silicon NPN transistor for strobe flash applications and medium power amplifier applications Scan PDF
    2SC3072 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC3072(2-7B1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3072(2-7B2A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3072(2-7J1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3072A Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3072A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3072A Toshiba Silicon NPN Transistor Scan PDF
    2SC3072-A(2-7B1A) Toshiba 2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SC3072 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 PDF

    C3072

    Abstract: 2SC3072 c3072 npn
    Text: 2SC3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		2SC3072 C3072 2SC3072 c3072 npn PDF

    C3072

    Abstract: c3072 npn 2SC3072
    Text: 2SC3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		2SC3072 20070701-JA C3072 c3072 npn 2SC3072 PDF

    2SC3072

    Abstract: C3072
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 2SC3072 C3072 PDF

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 c3072 2SC3072 c3072 npn PDF

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·


    Original     		2SC3072 c3072 2SC3072 c3072 npn PDF

    c3072

    Abstract: c3072 npn 2SC3072
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 PDF

    c3072 npn

    Abstract: c3072
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 c3072 npn c3072 PDF

    2SC3072

    Abstract: C3072
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		2SC3072 2SC3072 C3072 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)


    OCR Scan     		2SC3072 T11RAT10 PDF

    2SC3072

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5 .2 1 0 .2 r- • • • I 'l P in 0.6M AX. - t f - High DC Current Gain : hpE = 140~450


    OCR Scan     		2SC3072 2SC3072 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE —140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A)


    OCR Scan     		2SC3072 PDF

    2SC3072

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE = 140~450 (VCE = 2V, IC = 0.5A) hFE = 70 (Min.) (VCE = 2 V, IC = 4 A)


    OCR Scan     		2SC3072 2SC3072 PDF

    transistor LT 5210

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 6.8M A X (A ) • High DC Current Gain : = 140~450 (VCE = 2 V, IC = 0.5 A) 0.6 + 0.15 hFE = 70 (Min.) (VCE = 2 V, IC = 4A )


    OCR Scan     		2SC3072 Voltag00 transistor LT 5210 PDF

    MAX12001

    Abstract: 2sc3072
    Text: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5.210.2 r- • • P in 0.6MAX. - t f - High DC Current Gain : hpE = 140~450 (\Tn-n


    OCR Scan     		2SC3072 95MAX. 95IV1AX. MAX12001 2sc3072 PDF

    2SC3072

    Abstract: No abstract text available
    Text: 2SC3072 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. M ED IUM PO W ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hpE = 140-450 (Vc e = 2V, I ç = 0.5A) hFE = 70 (Min.) ( V = 2V, I = 4A) Low Collector Saturation Voltage


    OCR Scan     		2SC3072 2SC3072 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpg = 140~450 (Vc e = 2 V, IC = 0.5 A) hFE = 70 (Min.) (Vc e = 2 V, Ic = 4A)


    OCR Scan     		2SC3072 PDF

    2SC3072

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3072 T O S H IB A T R A N S IS T O R SIL IC O N N P N E P IT A X IA L T Y PE PCT PR O C ESS 2SC3072 S T R O B E FLASH A P P L IC A T IO N S M E D IU M P O W E R A M P L IF IE R A P P L IC A T IO N S • H igh DC Current G ain : h p g = 1 4 0 ~ 4 5 0


    OCR Scan     		2SC3072 101--kH- 55J35S 5K55S 2SC3072 PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF