Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515
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2SA1384
-300V
2SC3515
2SA1384
-20mA
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384
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2SC3515
2SA1384
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2SA1384
Abstract: 2SC3515
Text: 2SC3515 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC3515 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V
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2SC3515
2SA1384
SC-62
20070701-JA
2SA1384
2SC3515
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2SA1384
Abstract: 2SC3515
Text: 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V
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2SC3515
2SA1384
2SA1384
2SC3515
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smd transistor marking br
Abstract: transistor smd marking smd symbols transistors smd transistor 2SC3515 2SA1384 2SC3515
Text: Transistors SMD Type High Voltage Control Applications 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package
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2SC3515
2SA1384
smd transistor marking br
transistor smd marking
smd symbols
transistors smd
transistor 2SC3515
2SA1384
2SC3515
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2SA1384
Abstract: 2SC3515
Text: 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V
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2SC3515
2SA1384
2SA1384
2SC3515
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2SA1384
Abstract: 2SC3515 IC303
Text: 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V
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2SC3515
2SA1384
2SA1384
2SC3515
IC303
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Untitled
Abstract: No abstract text available
Text: 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V
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2SC3515
2SA1384
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2SA1384
Abstract: 2SC3515
Text: 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V
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2SC3515
2SA1384
2SA1384
2SC3515
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Untitled
Abstract: No abstract text available
Text: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1384
2SC3515
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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U1 3515
Abstract: 2SA1384 2SC3515
Text: 2SC3515 TOSHIBA 2SC3515 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1.6 M AX — CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7M AX. 0.4 ± 0 .0 5
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2SC3515
2SA1384
U1 3515
2SC3515
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2SA1384
Abstract: 2SC3515
Text: 2SC3515 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3515 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS U M AX. High Voltage : V c b O = 300V> v CEO = 300 v
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2SC3515
2SA1384
250mm2
2SC3515
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SC62 marking JB
Abstract: 2SA1384 2SC3515 oc sc62
Text: TO SH IB A 2SC3515 2SC3515 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1 .6 M A X . CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1 .7 M A X .
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2SC3515
2SA1384
250mm2
SC62 marking JB
2SC3515
oc sc62
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cathode ray
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DFFUSED TYPE 2SC3515 HIGH VOLTAGE CONTROL APPLICATIONS. Unit in mm PLASMA D I S P L Y s NIXIE TUBE DRIVER APPLICATIONS. 1.6 MAX . CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. FEATURES: . High V o l tage : V£gQ=300V, . Low Saturation Voltage
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2SC3515
2SA1384
cathode ray
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Untitled
Abstract: No abstract text available
Text: 2SC3515 T O SH IB A 2SC3515 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1.6 M AX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1 .7 M A X .
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2SC3515
2SA1384
250mm2X0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3515 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS i <;r M r 3 w r i h t • s v Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1.6 M A X 4.GMAX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS
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2SC3515
2SA1384
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Untitled
Abstract: No abstract text available
Text: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l
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OT-89
250mmJ
2SC2883
2SC2884
2SC2873
2SC2982
2SA1203
2SA1204
2SA1213
2SA1314
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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2sc3943
Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Text: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —
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2SC4400
2SC4253
2SC3936
2SC4258
2SC4098
2SC4117
2SD1821
2SC4102
2SC4413
2SD1824
2sc3943
2SC4117
2sc2060
2SC2553
2SC3170
2SC2242
2SC3536
4181A
2SC3039
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Toshiba 355-1
Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
Text: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »
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2SC4427
2SC3657
2SC3322
2SC3506
2SC4428
2SD1431
2SC3507
2SC4429
2SD1433
2SC3258
Toshiba 355-1
2SC3555
3563
2SC351
2SC4158
2SC3531
2sc3153
2SC3170
NEC 3552
2SC3556
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2SC1571
Abstract: 2sc3828 4088B 2SC3904 4082 mitsubishi 2SC3609 2SC4082 2SC4161 K 4087 2SC4246
Text: tt SS! £ T y p e No. € Manuf. ft H SANYO 3R *£ TOSHIBA m b NEC Ä ± àfi FUJITSU fâ T M ATSUS H I T A Z £ MITSUBISHI □ — A ROHM 2SC4082 2SC4259 2SC 4068 tö 2SC 4069 h UN2217 DTCÎ 2 4 G K h UN4217 DTC124GS 2SC 4070 2SC 4071 2SC 4073 n ft =- ft
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2SC44Q6
2SC4246
2SC4183
2SC4259
2SC4082
UN2217
DTC124GK
UN4217
DTC124GS
UN5531
2SC1571
2sc3828
4088B
2SC3904
4082 mitsubishi
2SC3609
2SC4082
2SC4161
K 4087
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2SC3301
Abstract: 2sa120 2SC2880
Text: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E
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2SC2880
2SC3301
2sa120
2SC2880
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2SA1384
Abstract: 2SC3515 A1384
Text: TO SH IBA 2SA1384 2 S A 1 38 4 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage : VCBO = - 300V, VCEO - - 300V
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2SA1384
2SC3515
2SA1384
A1384
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