2SA1674
Abstract: 2SC4391
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SC4391
2SA1674
2SA1674
2SC4391
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2SA1674
Abstract: 2SC4391
Text: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.
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2SC4391
2SA1674
2SA1674
2SC4391
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SA1674
2SC4391
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SC4391
2SA1674
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2SA1674
Abstract: 2SC4391
Text: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.
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2SA1674
2SC4391
2SA1674
2SC4391
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2SA1674
Abstract: 2SC4391
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
2SC4391
2SA1674
2SA1674
2SC4391
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PDF
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2SA1674
Abstract: 2SC4391
Text: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.
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2SA1674
2SC4391
2SA1674
2SC4391
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2SA1674
Abstract: 2SC4391
Text: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.
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2SA1674
2SC4391
2SA1674
2SC4391
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2SA1674
Abstract: 2SC4391
Text: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).
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2SC4391
2SA1674
2SA1674
2SC4391
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2SC4391
Abstract: 2SA1674
Text: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).
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2SC4391
2SA1674
2SC4391
2SA1674
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2SA1674
Abstract: 2SC4391
Text: Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO
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2SA1674
2SC4391
2SA1674
2SC4391
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SA1674
2SC4391
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2SA1674
Abstract: 2SC4391
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SA1674
2SC4391
2SA1674
2SC4391
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2SA1674
Abstract: 2SC4391
Text: Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO
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2SC4391
2SA1674
2SA1674
2SC4391
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SC4391
2SA1674
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PDF
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2SA1674
Abstract: 2SC4391
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
2SA1674
2SC4391
2SA1674
2SC4391
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SC4391
2SA1674
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SC4391 Silicon NPN epitaxial planer type For low -frequency output am plification Unit: mm C om ple m e ntary to 2 S A 1 674 • Features • Low collector to emitter saturation voltage V c E s a t • High collector to emitter voltage Vceo.
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OCR Scan
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2SC4391
2SA1674
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2SD2334
Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187
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OCR Scan
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2SD2174
2SD2175
2SD2176
2SD2177
2SD2185
2SD2186
2SD2187
2SD2188
2SD2189
2SD2190
2SD2334
2sc4814
2SD2076
2216y
2SD1546
2SD1930
2SD1755
2sc2562
2SC4062
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d5050j
Abstract: 2SC4340 MP40 2SC4382 2SC4387 2SC4392 2SC4353 2SC4347 2SA1671 2SC4354
Text: - 198 - Ta=25‘ C , * E p f i T c = 2 5 £C m 2SC4339 % ?± an 2SC4339—Z 2SC4340 m £ am & VcBO V’cEO (V) (V) (W) (A) « Pc* ÎC (D C } VcB (V) (il (W) 9 1 100 1 9 1 100 1.3 8 1 60 1.3 10 1 80 5 1.5 25 0. 5 1 00 5 1.5 25 100 8 1.5 30 100 10 1.5 HS PSW/PD
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OCR Scan
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2SC4339
2SC4339-Z
2SC4340
2SC4341
2SC4347
2SC4348
2SC4365
SC-59
2SC4366
O-92MOD)
d5050j
MP40
2SC4382
2SC4387
2SC4392
2SC4353
2SA1671
2SC4354
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