Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)
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2002/95/EC)
2SA1791J
2SC4656J
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2SA179
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G ue pl d in an c se ed lud pl vi an m m es si
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2002/95/EC)
2SC4656G
2SA1791G
2SA179
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC4656G
2SA1791G
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2SA1791J
Abstract: 2SC4656J SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 5˚ Symbol Rating
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2002/95/EC)
2SC4656J
2SA1791J
SC-89
2SA1791J
2SC4656J
SC-89
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2SA179
Abstract: 2SA1791J 2SC4656J SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm
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2002/95/EC)
2SC4656J
2SA1791J
SC-89
2SA179
2SA1791J
2SC4656J
SC-89
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2SA1791
Abstract: 2SC4656
Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V
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2SA1791
2SC4656
2SA1791
2SC4656
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2SA1791G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4656G • Package • High transition frequency fT • Small collector output capacitance Cob
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2002/95/EC)
2SA1791G
2SC4656G
2SA1791G
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2SA1791J
Abstract: 2SC4656J SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)
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2002/95/EC)
2SA1791J
2SC4656J
2SA1791J
2SC4656J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC4656G
2SA1791G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4656G • Package • High transition frequency fT • Small collector output capacitance Cob
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2002/95/EC)
2SA1791G
2SC4656G
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2SA1791
Abstract: 2SC4656
Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50
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2SA1791
2SC4656
2SA1791
2SC4656
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2SA1791
Abstract: 2SC4656
Text: Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1791 Unit: mm 1.6±0.15 0.4 1 3 0.5 0.5 +0.1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
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2SC4656
2SA1791
2SA1791
2SC4656
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4656G • Features ue pl d in an c se ed lud pl vi
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2002/95/EC)
2SA1791G
2SC4656G
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2SA1791
Abstract: 2SC4656
Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 1.6±0.15 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –50
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2SA1791
2SC4656
2SA1791
2SC4656
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4656G • Package • High transition frequency fT
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2002/95/EC)
2SA1791G
2SC4656G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G • Package • High transition frequency fT
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2002/95/EC)
2SC4656G
2SA1791G
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2SA1791
Abstract: 2SC4656 SC-75
Text: Transistors 2SA1791 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4656 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open)
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2SA1791
2SC4656
SC-75
2SA1791
2SC4656
SC-75
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2SA179
Abstract: SC-89 2SA1791J 2SC4656J
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J
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2002/95/EC)
2SA1791J
2SC4656J
2SA179
SC-89
2SA1791J
2SC4656J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J
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2002/95/EC)
2SA1791J
2SC4656J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm
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2002/95/EC)
2SC4656J
2SA1791J
SC-89
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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transistor marking c rank Y
Abstract: transistor marking AMq
Text: Panasonic Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency am plification Unit: mm C om ple m e ntary to 2 S A 1 791 • 1.6+0.15 0.4 0.8+0.1 0.4 Features • Small collector output capacitance Cob. • SS-Mini type package, allowing downsizing of the equipment
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2SC4656
2SA1791
transistor marking c rank Y
transistor marking AMq
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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2SB1446
Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
Text: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A
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2SB1462
2SB1218A
2SD1819A
2SB1219/A
2SD1820/A
2SB709A
2SD601A
2SB710/A
2SD602/A
2SA1309A
2SB1446
2SD2458
2sc5335
2SD1010
2SD1993
2SD1995
2SB642
2SD119
2SD2456
2SC2632
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