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    2SC5096 Search Results

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    2SC5096 Price and Stock

    Toshiba America Electronic Components 2SC5096-R,LF

    RF TRANS NPN 10V 10GHZ SSM
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    DigiKey 2SC5096-R,LF Reel
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    2SC5096-R,LF Digi-Reel 1
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    Quest Components 2SC5096-O(TE85L) 4,300
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    Toshiba America Electronic Components 2SC5096-O(TE85L,F)

    2SC5096 - TRANSISTOR (SILICON)
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    Rochester Electronics 2SC5096-O(TE85L,F) 45,000 1
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    2SC5096 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5096 Toshiba 2SC5096 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP RF Small Signal Original PDF
    2SC5096 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5096 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC5096 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5096 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5096 Toshiba NPN Transistor Scan PDF
    2SC5096F Toshiba 2SC5096 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP RF Small Signal Original PDF
    2SC5096(F) Unknown Silicon NPN Transistor Scan PDF
    2SC5096(F) Unknown Silicon NPN Transistor Scan PDF
    2SC5096F Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5096F-O Toshiba 2SC5096 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP RF Small Signal Original PDF
    2SC5096F-O Toshiba TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE Scan PDF
    2SC5096F-R Toshiba 2SC5096 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP RF Small Signal Original PDF
    2SC5096F-R Toshiba TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE Scan PDF
    2SC5096FT Toshiba 2SC5096 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP RF Small Signal Original PDF
    2SC5096FT Unknown NPN Transistor Scan PDF
    2SC5096FT Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5096FT Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5096FTO Toshiba 2SC5096 - TRANSISTOR RF SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP RF Small Signal Original PDF
    2SC5096FT-O Toshiba 2SC5096 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP RF Small Signal Original PDF

    2SC5096 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5096 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


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    2SC5096 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    2SC5096 PDF

    TRANSISTOR A743

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC5096 TRANSISTOR A743 PDF

    2SC5096

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    2SC5096 2SC5096 PDF

    2SC5096FT

    Abstract: No abstract text available
    Text: 2SC5096FT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5096FT 単位: mm ○ VHF~UHF 低雑音増幅用 • 雑音特性が優れています。 : NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz 絶対最大定格 (Ta = 25°C) 項


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    2SC5096FT 2SC5096FT PDF

    ic 2114

    Abstract: 2SC5096
    Text: 2SC5096 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5096 ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz 絶対最大定格 (Ta = 25°C) 項 目


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    2SC5096 -j150 -j100 -j250 ic 2114 2SC5096 PDF

    2SC5096FT

    Abstract: No abstract text available
    Text: 2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SC5096FT 2SC5096FT PDF

    2SC5096

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SC5096 2SC5096 PDF

    2SC5096FT

    Abstract: No abstract text available
    Text: 2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC5096FT 2SC5096FT PDF

    cbc 547

    Abstract: cbc 182 2SC5096FT 2SC5096 CB-2 equivalent
    Text: 2SC5096FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5096 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM +


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    2SC5096FT 2SC5096 cbc 547 cbc 182 CB-2 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original
    2SC5096 PDF

    2SC5096FT

    Abstract: No abstract text available
    Text: 2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    2SC5096FT 2SC5096FT PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)


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    2SC5096 S21el2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    2SC5096F PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5096FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = 1.8dB, |S2ie l2 = 7.5dB f=2GHz 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5096FT PDF

    2SC5096

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5096 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1 MAXIMUM RATINGS (Ta = 25°C)


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    2SC5096 2SC5096 PDF

    2SC5096F

    Abstract: transistor ESM
    Text: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    2SC5096F 2SC5096F transistor ESM PDF

    821e

    Abstract: 2SC5096
    Text: TOSHIBA 2SC5096 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 0.8 ± 0.1 r . -I M A X IM U M RATINGS (Ta = 25°C)


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    2SC5096 7-J250 821e 2SC5096 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5096 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 6 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2 = 7.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5096 2SC509 S21el2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 7-5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5096F PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5096 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q96 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF = 1.8dB, |S2 ie l2 = 7.5dB f=2GHz 1.6 ± 0.2 .0810.1 MAXIMUM RATINGS (Ta = 25°C)


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    2SC5096 2SC5Q96 --j50 PDF

    2SC5096FT

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5096FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF=1.8dB, |S2lel2= 7.5dB f=2GHz 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)


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    2SC5096FT 2SC5096FT PDF

    2SC5096

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5096 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096 V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8d B , |S2lel2= 7.5dB f=2GHz Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5096 2SC5096 PDF

    HN9C01FE

    Abstract: No abstract text available
    Text: TOSHIBA HN9C01 FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C01FE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS T w n HpviV p s arp hnilt. in t.n flip snnpr-t.Viin an d p Y trp m p sn n p r mini 6pins package : ES6 •o MOUNTED DEVICES


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    HN9C01 HN9C01FE 2SC5086 2SC5096 HN9C01FE PDF