2SC5109
Abstract: No abstract text available
Text: 2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5109
Abstract: No abstract text available
Text: 2SC5109 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5109 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧
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2SC5109
SC-59
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2SC5109
Abstract: No abstract text available
Text: 2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO
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2SC5109
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Untitled
Abstract: No abstract text available
Text: 2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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FHC30LG
Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Text: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911
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MMBR5031
2SA1778
2SC3770
2SC4269
MMBR5179
2SC3837K
2SC3545
2SC3771
2SA1669
2SC4364
FHC30LG
ne72089
KC535C
NE388-06
AL307BM
IC 78L12 SOT89
KC535B
AL307
79L05
hearing aid lm358
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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2sc5108
Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,
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BCE0003E
2sc5108
toshiba transistors catalog
2sk3476
UHF/VHF IC transceiver
2SK403
microwave Duplexer
Am tuning varicap
Wideband MMIC VCO covers 8 GHz to 12.5 GHz
2Sk3656
microwave transceiver 3.54 GHz
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
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2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
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2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
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2SC5109
Abstract: No abstract text available
Text: 2SC5109 TOSHIBA 2 S C 5 1 09 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5109 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L PLA N A R T Y PE i ç c R 1 n Q Unit in mm FOR V CO A PPLIC A TIO N 1-0.5 -0.3 2.5 M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC5109
SC-59
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5109 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 09 U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5109
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2SC5109
Abstract: No abstract text available
Text: 2SC5109 TO SH IBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 09 Unit in mm + 0.5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5109
SC-59
2SC5109
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d 1691- y
Abstract: No abstract text available
Text: 2SC5109 T O SH IB A TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 09 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5109
SC-59
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d 1691- y
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2SC5109
Abstract: No abstract text available
Text: 2SC5109 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 09 Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5109
SC-59
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2SC5109
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Untitled
Abstract: No abstract text available
Text: 2SC5109 TOSHIBA 2 S C 5 1 09 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5109
SC-59
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR T YPE TRANSISTOR *| Q J U nit in mm FO R V C O A P P L IC A T IO N M A X IM U M R A T IN G S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation
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5m337
2SC5109
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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SV153A
Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670
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2SC2670
2SC2715
2SC2716
1SV128
1SV271
1SV172
1SV252
1SV102
SV149
2V02H
SV153A
Sv153
varicap diode
2SC491
1SV226
Am tuning varicap
1SS242
1SV211
4007F
S1B66
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