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ROHM Semiconductor 2SC5880TV2Q TRANS NPN 60V 2A ATV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5880TV2Q	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.16063	Buy Now
ROHM Semiconductor 2SC5880TV2R TRANS NPN 60V 2A ATV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5880TV2R	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.16063	Buy Now
ROHM Semiconductor 2SC5880 TV2 Q
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC5880 TV2 Q		2,152			1 $0.9 10 $0.9 100 $0.9 1000 $0.27 10000 $0.18	Buy Now

2SC5880 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC5880		ROHM	Power transistor (60V, 2A)		Original	PDF
2SC5880TV2Q		ROHM	High speed switching Transistor; Package: ATV; Constitution materials list: Packing style: Ammo Box; Package quantity: 2500;		Original	PDF
2SC5880TV2Q		ROHM	Power Transistor (60 V, 2 A)		Original	PDF
2SC5880TV2R		ROHM	Power Transistor (60 V, 2 A)		Original	PDF
2SC5880TV2R		ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60V 2A 3-PIN ATV		Original	PDF

2SC5880 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA2093 Abstract: 2SC5880 Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)	Original	PDF	2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880
Untitled Abstract: No abstract text available Text: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093	Original	PDF	2SC5880 200mV 100mA) 2SA2093 C5880 R1120A
6008E-12 Abstract: 2SC5880 Text: SPICE PARAMETER 2SC5880 by ROHM TR Div. * 2SC5880 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5880 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747	Original	PDF	2SC5880 Q2SC5880 00E-15 6008E-12 000E-3 568E-3 43E-12 343E-12 6008E-12 2SC5880
2SA2093 Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and	Original	PDF	2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications
c5880 Abstract: 2SA2093 2SC5880 2SA20 Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)	Original	PDF	2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 c5880 2SA2093 2SC5880 2SA20
Untitled Abstract: No abstract text available Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)	Original	PDF	2SC5880 200mV 100mA) 2SA2093 65Max. C5880
Untitled Abstract: No abstract text available Text: Power transistor 60V, 2A 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.	Original	PDF	2SC5880 200mV 100mA) 2SA2093 C5880 R1120A
2SA2160 Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series	Original	PDF	O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
A2093 Abstract: 2SA2093 2SC5880 Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)	Original	PDF	2SA2093 65Max. -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880
pioneer mosfet audio amp ic Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114 Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great	Original	PDF	2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
2SC6144 Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114 Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.	Original	PDF	R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
A2093 Abstract: 2SA2093 2SC5880 Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and	Original	PDF	2SA2093 -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880
2sc5922 Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982 Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability	Original	PDF	200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
A2093 Abstract: 2SA2093 2SC5880 Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)	Original	PDF	2SA2093 65Max. -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880

A2093 Abstract: 2SA2093 Text: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and	Original	PDF	2SA2093 200mV 2SC5880 A2093 R1120A A2093 2SA2093