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    Panasonic Electronic Components 2SD0968A0L

    TRANS NPN 120V 0.5A MINIP3-F1
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    2SD0968 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD0968 Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0968 Panasonic NPN Transistor Original PDF
    2SD0968A Panasonic NPN Transistor Original PDF
    2SD0968A Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD0968A Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0968A Panasonic Transistor for low-frequency driver amplification. Complementary to 2SB0789A (2SB789A) Original PDF
    2SD0968A0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF 120VCEO .5A MINIPWR Original PDF
    2SD0968ARL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN LOW FREQ MINI-PWR Original PDF
    2SD0968AVR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0968AVS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD0968 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0789

    Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
    Text: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to


    Original     		PDF 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SD0968 2SD968) 2SD0968A 2SD968A) 2SB0789 2SB0789 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to


    Original     		PDF 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SD0968 2SD968) 2SD0968A 2SD968A) 2SB0789 2SB0789A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD0968A 2SD968A) 2SB0789A 2SB789A)

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC


    Original     		PDF 2SD0968A 2SD968A) 2SB0789A 2SB789A)

    2SB0789A

    Abstract: 2SB789A 2SD0968A 2SD968A IC 2003
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 1.6±0.2 1 3 2 0.5±0.08 0.4±0.08


    Original     		PDF 2002/95/EC) 2SD0968A 2SD968A) 2SB0789A 2SB789A) 2SB0789A 2SB789A 2SD0968A 2SD968A IC 2003

    2SB0789

    Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
    Text: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to


    Original     		PDF 2SB0789, 2SB0789A 2SB789, 2SB789A) 2SD0968 2SD968) 2SD0968A 2SD968A) 2SB0789 2SB0789 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A

    2SB0789A

    Abstract: 2SB789A 2SD0968A 2SD968A
    Text: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC


    Original     		PDF 2SD0968A 2SD968A) 2SB0789A 2SB789A) 2SB0789A 2SB789A 2SD0968A 2SD968A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency driver amplification Complementary to 2SB0789G • Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD0968G 2SB0789G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SB0789G • Features ■ Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD0968G 2SB0789G

    2SD0968G

    Abstract: 2SB0789G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency driver amplification Complementary to 2SB0789G ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SD0968G 2SB0789G 2SD0968G 2SB0789G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 3 2 0.5±0.08 0.4±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te on na tin nc


    Original     		PDF 2002/95/EC) 2SD0968A 2SD968A) 2SB0789A 2SB789A)

    2SB0789G

    Abstract: 2SD0968G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SB0789G • Package • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD0968G 2SB0789G 2SB0789G 2SD0968G

    2SB789A

    Abstract: 2SB0789A 2SD0968A 2SD968A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 3˚ 1 0.4±0.08 0.4±0.04 4.0+0.25 –0.20 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD0968A 2SD968A) 2SB789A 2SB0789A 2SD0968A 2SD968A

    2SB0789A

    Abstract: 2SB789A 2SD0968A 2SD968A
    Text: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0968A 2SD968A) 2SB0789A 2SB789A) 2SB0789A 2SB789A 2SD0968A 2SD968A

    2sd0968

    Abstract: No abstract text available
    Text: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Collector to base voltage 2SD0968A Collector to


    Original     		PDF 2SD0968, 2SD0968A 2SD968, 2SD968A) 2SB0789 2SB789) 2SB0789A 2SB789A) 2sd0968

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm Parameter Collector to base voltage 2SD0968A Collector to 2SD0968 100


    Original     		PDF 2SD0968, 2SD0968A 2SD968, 2SD968A) 2SB0789 2SB789) 2SB0789A 2SB789A) 2SD0968

    2SB0789

    Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
    Text: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage


    Original     		PDF 2SD0968, 2SD0968A 2SD968, 2SD968A) 2SB0789 2SB789) 2SB0789A 2SB789A) 2SD0968 2SB0789 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.5±0.1 4.0+0.25 –0.20 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1


    Original     		PDF 2002/95/EC) 2SD0968A 2SD968A)

    2SB0789A

    Abstract: 2SB789A 2SD0968A 2SD968A
    Text: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SD0968A 2SD968A) 2SB0789A 2SB789A) 2SB0789A 2SB789A 2SD0968A 2SD968A

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    hw101

    Abstract: HW101A 2SD0968A NJM2640 NJM2640E motor dc fan 48v motor dc 48v ZD 103 ma
    Text: NJM2640 48V ２相半波モータプリドライバ • 概要 ■ 外形 NJM2640 は48V ファンモータ向けに開発した 2 相半 波 DC ブラシレスモータプリドライバ IC です。 ロック保護／自動復帰回路を内蔵し、モータロック時


    Original     		PDF NJM2640 NJM2640E HW101A 100mVp-p 300mA 48VNJM2640 hw101 2SD0968A NJM2640 NJM2640E motor dc fan 48v motor dc 48v ZD 103 ma

    Untitled

    Abstract: No abstract text available
    Text: NJM2640 PRELIMINARY Two-phase Unipolar DC Brushless Motor Pre-Driver IC ♦ PACKAGE OUTLINE ♦ GENERAL DESCRIPTION NJM2640 is a two phase unipolar DC brushes motor pre-driver IC. It features high voltage bipolar technology so that the driver works up to 48V. High voltage operation


    Original     		PDF NJM2640 NJM2640 NJM2640E