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    Panasonic Electronic Components 2SD11490RL

    TRANS NPN 100V 0.02A MINI3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD11490RL Reel 6,000
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    • 10000 $0.05125
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    Panasonic Electronic Components 2SD11490SL

    TRANS NPN 100V 0.02A MINI3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD11490SL Reel 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05125
    		Buy Now

    2SD1149 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1149 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1149 Panasonic NPN Transistor Original PDF
    2SD1149 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1149 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1149 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1149 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1149 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1149 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1149 Panasonic Si NPN epitaxial planar. AF amplifier. Scan PDF
    2SD11490RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF AMP 100VCEO MINI 3P Original PDF
    2SD11490SL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF AMP 100VCEO MINI 3P Original PDF
    2SD11491VR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD11491VS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD1149-R Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1149-S Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1149-T Panasonic Silicon NPN epitaxial planer type Original PDF

    2SD1149 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD1149

    2SD1149

    Abstract: No abstract text available
    Text: Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 1.9±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage


    Original     		PDF 2SD1149 2SD1149

    2SD1149

    Abstract: XN05553 XN5553
    Text: Composite Transistors XN05553 XN5553 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SD1149 x 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C)


    Original     		PDF XN05553 XN5553) 2SD1149 2SD1149 XN05553 XN5553

    2SD1149

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 ■ Absolute Maximum Ratings Ta = 25°C 5˚ 2.8+0.2


    Original     		PDF 2002/95/EC) 2SD1149 2SD1149

    2SD1149

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD1149 2SD1149

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD1149 SC-59

    2SD1149

    Abstract: VEBO-15V
    Text: Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V Peak collector current


    Original     		PDF 2SD1149 2SD1149 VEBO-15V

    IC-NV

    Abstract: 2SD1149 XP5553 VEBO-15V
    Text: Composite Transistors XP5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1 6 2 5 3 4 0 to 0.1 2SD1149 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP5553 2SD1149 IC-NV 2SD1149 XP5553 VEBO-15V

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XP05553 Silicon NPN epitaxial planar transistor 5 6 5˚ 1 3 2 0.65 (0.65) 1.3±0.1 2.0±0.1 Overall 0.9±0.1 0 to 0.1 • Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • 2SD1149 x 2 elements Rating of element 0.2±0.1 1.25±0.10


    Original     		PDF XP05553 2SD1149

    2SD1149

    Abstract: No abstract text available
    Text: Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V Peak collector current


    Original     		PDF 2SD1149 2SD1149

    2SD1149

    Abstract: VEBO-15V
    Text: Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat


    Original     		PDF 2SD1149 2SD1149 VEBO-15V

    2SD1149

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD1149 SC-59 2SD1149

    2SD1149

    Abstract: XN04556 XN4556
    Text: Composite Transistors XN04556 XN4556 NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SD1149 x 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C) Symbol


    Original     		PDF XN04556 XN4556) 2SD1149 2SD1149 XN04556 XN4556

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SD1188

    Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150


    Original     		PDF 2SD1101 2SB831 2SD1102 2SD1103 2SD1104 2SD1105 2SD1106 2SD1107 2SD1108 2SD1109 2SD1188 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05553 Silicon NPN epitaxial planar type 5 6 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) XP05553 2SD1149

    2SD1149

    Abstract: XP05553
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05553 Silicon NPN epitaxial planar type 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For low-frequency amplification 0.2±0.05 • Basic Part Number


    Original     		PDF 2002/95/EC) XP05553 2SD1149 XP05553

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SD1149

    Abstract: XN05553 XN5553
    Text: Composite Transistors XN05553 XN5553 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package


    Original     		PDF XN05553 XN5553) 2SD1149 XN05553 XN5553

    XN04556

    Abstract: XN4556 2SD1149
    Text: Composite Transistors XN04556 XN4556 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package


    Original     		PDF XN04556 XN4556) XN04556 XN4556 2SD1149

    2SD1149

    Abstract: XP05553
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05553 Silicon NPN epitaxial planar type 5 6 Unit: mm (0.425) For low-frequency amplification 0.2±0.05 0.12+0.05 –0.02 4 • Basic Part Number 5˚ Th an W is k y Th e a pro ou


    Original     		PDF 2002/95/EC) XP05553 2SD1149 XP05553

    gy-80

    Abstract: 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654
    Text: PANASONIC INDL/ELEK-CSEHI} 7BC D | □□□C]5D4 S f ï f ^ T 2SD1149 2SD1149 '> ij 3 > N P N N P N Epitaxial Planar T JU’/ U — i f i J i & i i i U f f l / A F Am plifier • 4$ Î S /F e a tu re s


    OCR Scan     		PDF 2SD1149 gy-80 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654

    PA100

    Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
    Text: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9


    OCR Scan     		PDF 1CB01 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1176A PA100 2SD1147 2SD1176 2sd1159 2SB863