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Toshiba America Electronic Components 2SD2129,ALPSQ(M TRANS NPN 100V 3A TO220NIS
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Toshiba America Electronic Components 2SD2129,LS4ALPSQ(M TRANS NPN 100V 3A TO220NIS
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2SD2129 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD2129	Toshiba	TRANS DARLINGTON NPN 100V 3A 3(2-10R1A)	Original	PDF
2SD2129	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2129	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2129	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2129	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2129	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2129	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2129	Toshiba	Silicon NPN transistor for high power switching applications, hammer drive and pulse motor drive applications	Scan	PDF
2SD2129	Toshiba	Silicon NPN Triple Diffused Type Transistor	Scan	PDF
2SD2129,ALPSQ(M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF
2SD2129,LS4ALPSQ(M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF

2SD2129 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SD2129 Abstract: D2129 Text: 2SD2129 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	PDF	2SD2129 2SD2129 D2129
D2129 Abstract: 2SD2129 Text: 2SD2129 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	PDF	2SD2129 D2129 2SD2129
Untitled Abstract: No abstract text available Text: 2SD2129 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	PDF	2SD2129 SC-67 2-10R1A
Untitled Abstract: No abstract text available Text: 2SD2129 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	PDF	2SD2129
2SD2129 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SD2129 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications	Original	PDF	2SD2129 O-220F O-220F) 2SD2129
D2129 Abstract: 2SD2129 Text: 2SD2129 東芝トランジスタシリコンNPN三重拡散形 2SD2129 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 1.5 A)	Original	PDF	2SD2129 SC-67 2-10R1A 20070701-JA D2129 2SD2129
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	PDF	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
LM8550 Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo	Original	PDF	2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	PDF	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
2SD2129 Abstract: No abstract text available Text: TOSHIBA 2SD2129 2 S D 2 1 29 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS • • High DC Current Gain : hpE —2000 (Min.) Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.)	OCR Scan	PDF	2SD2129 2SD2129
2SD2129 Abstract: No abstract text available Text: TO SHIBA 2SD2129 2 S D 2 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r <v> • High DC Current Gain : hpE —2000 (Min.) Low Saturation Voltage : V^ e (sat) = l-5V (Max.)	OCR Scan	PDF	2SD2129 100//S* 2SD2129

Untitled Abstract: No abstract text available Text: T O SH IB A 2SD2129 2 S D 2 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 • High DC Current Gain : hp'E = 2000 (Min.) Low Saturation Voltage : Vqe (sat) = l-5V (Max.)	OCR Scan	PDF	2SD2129
1ycc Abstract: Z702 Text: T O S H IB A 2SD2129 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D2 1 2 9 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 + 0.3 • , ^3.2 + 0.Z Z.7±02 High DC Current Gain * ViTvm = 9 0 n n fA/Tin Ì	OCR Scan	PDF	2SD2129 1ycc Z702
2SD2449 Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799 Text: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129	OCR Scan	PDF	2SC982TM 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB677 2SD687 2SB907 2SD1222 2SD2449 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
2SD2129 Abstract: No abstract text available Text: TOSHIBA 2SD2129 2 S D 2 1 29 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS • • High DC Current Gain : hpE —2000 (Min.) Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.)	OCR Scan	PDF	2SD2129 2SD2129
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
2SK 150A Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015	OCR Scan	PDF	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	PDF	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	PDF	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	PDF	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266

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2SD2129 Search Results

2SD2129 Price and Stock

Toshiba America Electronic Components 2SD2129,ALPSQ(M

Toshiba America Electronic Components 2SD2129,LS4ALPSQ(M

2SD2129 Datasheets (11)

2SD2129 Datasheets Context Search

2SD2129

D2129

Untitled

Untitled

2SD2129

D2129

alternator diode 1776 B

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

LM8550

smd transistor h2a

2SD2129

2SD2129

Untitled

1ycc

2SD2449

2SD2129

b1375

2SK 150A

Transistor 2SA 2SB 2SC 2SD

15J102

2sC5200, 2SA1943, 2sc5198

2SC144