Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2413 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC
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OT-89-3L
2SD2413
OT-89-3L
200MHz
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm ● +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection.
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2SD2416
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2SD2414
Abstract: No abstract text available
Text: Transistors SMD Type Silicon NPN Triple Diffused Type 2SD2414 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2
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2SD2414
O-263
2SD2414
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SD2413G
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2SD2413
Abstract: No abstract text available
Text: Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm ● ● 0.5±0.08 1.5±0.1 * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage
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2SD2413
2SD2413
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2SD2413G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter Th an
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2002/95/EC)
2SD2413G
2SD2413G
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2SD2414
Abstract: No abstract text available
Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics
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2SD2414
2-10S2
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Untitled
Abstract: No abstract text available
Text: Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3° 0.4 max. ● 3° ● High collector to base voltage VCBO. High collector to emitter voltage VCEO.
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2SD2413
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20
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2002/95/EC)
2SD2413
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Untitled
Abstract: No abstract text available
Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics
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2SD2414
2-10S2
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD2413G
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2SD2413
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2413 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC
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OT-89
2SD2413
OT-89
200MHz
2SD2413
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2SD2413
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 • Features 1.5±0.1 Unit Collector-base voltage (Emitter open) VCBO
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2002/95/EC)
2SD2413
2SD2413
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20
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2002/95/EC)
2SD2413
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Untitled
Abstract: No abstract text available
Text: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Absolute Maximum Ratings (Ta = 25°C)
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2SD2414
2-10S2
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2SD2413G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD2413G
2SD2413G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 400
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2002/95/EC)
2SD2413
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2SD2416
Abstract: No abstract text available
Text: Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm ● 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High foward current transfer ratio hFE. 60V zener diode built in between collector and base.
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2SD2416
2SD2416
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414 SM U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • Low Saturation Voltage : V q e (s a t)= 0.5V (M ax.) (at Ic= 4A ) M A X IM U M R ATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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2SD2414
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2SD2414
Abstract: No abstract text available
Text: TO SH IBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414(SM) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10.3MAX. • 1.32 Low Saturation Voltage • Vipern •H* z (1 ü V CA/Tp y ì fa f T/^ = A A i
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2SD2414
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2SD2414
Abstract: No abstract text available
Text: TO SH IBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414(SM) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10.3MAX. • 1.32 •H- Low Saturation Voltage • Vipern z (1 ü V CA/Tp y ì fa f T/^ = A A i
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2SD2414
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2sd241
Abstract: No abstract text available
Text: TOSHIBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD241 4(SM) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ,3 MAX • Low Saturation Voltage • V n-m • • Vv.ci = 0 fiV Î M - s iy 5 ,0 1 fat T n = Æ A Ï
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2SD2414
2SD241
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low -frequency am plification Unit: mm 4 . 5+ 0.1 • Features • • • • High foward current transfer ratio hpe. 60V zener diode built in between collector and base. Darlington connection.
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2SD2416
-50mA,
200MHz
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2SD2414
Abstract: No abstract text available
Text: TO SHIBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD241 4(SM) HIGH CURRENT SWITCHING APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 1 0 .3 M A X . 1.32 • Low Saturation Voltage •H* : VCE (sat) - °-5 v (Max.) (at Iç; = 4 A)
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2SD2414
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