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Samtec Inc S2SD-25-26-L-05.00-SR 2.00 MM TIGER EYE DOUBLE ROW DIS Free Sample
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DigiKey	S2SD-25-26-L-05.00-SR	Bulk			1	1 $19.48 10 $19.48 100 $19.48 1000 $19.48 10000 $19.48	Buy Now
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MIL SPEC CONNECT S2SD-25-26-L-05.00-SR S2SD-25-26-L-05.00-SR
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DigiKey	S2SD-25-26-L-05.00-SR				5	1 - 10 $33.916 100 $34.786 1000 $31.43543 10000 $31.43543	Buy Now
MIL SPEC CONNECT S2SD-25-26-L-04.00-D-NDS S2SD-25-26-L-04.00-D-NDS
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DigiKey	S2SD-25-26-L-04.00-D-NDS				5	1 - 10 $52.633 100 $53.982 1000 $48.78301 10000 $48.78301	Buy Now
Samtec Inc S2SD-25-26-L-04.00-D-NDS 2.00 MM TIGER EYE DOUBLE ROW DIS Free Sample
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DigiKey	S2SD-25-26-L-04.00-D-NDS	Bulk			1	1 $30.23 10 $30.23 100 $30.23 1000 $30.23 10000 $30.23	Buy Now
Avnet Americas	S2SD-25-26-L-04.00-D-NDS	Bulk			1	1 $29.6254 10 $28.38088 100 $22.3584 1000 $22.3584 10000 $22.3584	Buy Now
Mouser Electronics	S2SD-25-26-L-04.00-D-NDS					1 $30.23 10 $28.62 100 $23.29 1000 $22.1 10000 $22.1	Get Quote
Master Electronics	S2SD-25-26-L-04.00-D-NDS					1 $39.62 10 $34.82 100 $23.93 1000 $22.69 10000 $22.69	Buy Now
Sager	S2SD-25-26-L-04.00-D-NDS				1	1 $30.23 10 $28.62 100 $23.29 1000 $22.1 10000 $22.1	Buy Now
MIL SPEC CONNECT S2SD-25-26-L-11.00-D-NUX S2SD-25-26-L-11.00-D-NUX
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DigiKey	S2SD-25-26-L-11.00-D-NUX				5	1 - 10 $62.261 100 $63.858 1000 $57.70693 10000 $57.70693	Buy Now

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2SD2526 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD2526	Toshiba	TRANS DARLINGTON NPN 100V 5A 3(2-10T1A)	Original	PDF
2SD2526	Toshiba	NPN Transistor	Original	PDF
2SD2526	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2526	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2526	Toshiba	Silicon NPN transistor for high power switching applications, hammer drive and pulse motor drive applications	Scan	PDF

2SD2526 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB1641 Abstract: 2SD2526 D2526 transistor equivalent type Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD2526 2SB1641 2SB1641 2SD2526 D2526 transistor equivalent type	PDF
Untitled Abstract: No abstract text available Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD2526 2SB1641 2-10T1A	PDF
2SB1641 Abstract: 2SD2526 D2526 Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD2526 2SB1641 2SB1641 2SD2526 D2526	PDF
2SB1641 Abstract: 2SD2526 D2526 Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD2526 2SB1641 2SB1641 2SD2526 D2526	PDF
Untitled Abstract: No abstract text available Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)	Original	2SD2526 2SB1641 2-10T1A	PDF
2SB1641 Abstract: 2SD2526 B1641 Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)	Original	2SB1641 2SD2526 2SB1641 2SD2526 B1641	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
Untitled Abstract: No abstract text available Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)	Original	2SB1641 2SD2526	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF
B1641 Abstract: No abstract text available Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)	Original	2SB1641 2SD2526 2-10T1A B1641	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF

Untitled Abstract: No abstract text available Text: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)	OCR Scan	2SD2526 2SB1641	PDF
2SB1641 Abstract: 2SD2526 Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :	OCR Scan	2SD2526 2SB1641 2SB1641 2SD2526	PDF
2SB1641 Abstract: 2SD2526 Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :	OCR Scan	2SD2526 2SB1641 2SB1641 2SD2526	PDF
NPN 1147 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 U nit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. H A M M E R D RIV E , PULSE M O T O R D R IV E A P P L IC A T IO N S. • • • High DC Current Gain : hpE = 2000 Min. (V c e = 3 V , I = 3A) Low Saturation Voltage : V q e (sat) = 1-5V (Max.) (Ic = 3A)	OCR Scan	2SD2526 2SB1641 NPN 1147	PDF
2SD2526 Abstract: No abstract text available Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 i -¿>1.2 High DC Current Gain : hFE = 2000 Min. (VÇE = 3V, Iç = 3A) Low Saturation Voltage : Vçjg (sat)= Í-5V (Max.) (Iq = 3A)	OCR Scan	2SD2526 D2526 2SB1641 --55-COLLECTOR 2SD2526	PDF
B1641 Abstract: 2SB1641 2SD2526 Text: TO SH IBA 2SB1641 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 641 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hEE = 1500 Min. (VCE= -3 V , IC= -2 .5 A ) Low Saturation Voltage	OCR Scan	2SB1641 2SD2526 B1641 2SB1641 2SD2526	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 2SB1641 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 641 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • i 6 1 .2 High DC Current Gain : hFE = 1500 Min. (VCE= _3V , Ic= -2 .5 A )	OCR Scan	2SB1641 2SD2526	PDF

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2SD2526 Search Results

2SD2526 Price and Stock

Samtec Inc S2SD-25-26-L-05.00-SR

MIL SPEC CONNECT S2SD-25-26-L-05.00-SR

MIL SPEC CONNECT S2SD-25-26-L-04.00-D-NDS

Samtec Inc S2SD-25-26-L-04.00-D-NDS

MIL SPEC CONNECT S2SD-25-26-L-11.00-D-NUX

2SD2526 Datasheets (5)

2SD2526 Datasheets Context Search

2SB1641

Untitled

2SB1641

2SB1641

Untitled

2SB1641

smd transistor h2a

GT30F124

Untitled

transistor bc 245

2SA1941 amp circuit

2sC5200, 2SA1943

B1641

2SA1930 2sc5171

Untitled

2SB1641

2SB1641

NPN 1147

2SD2526

B1641

15J102

2sC5200, 2SA1943, 2sc5198

2SC144

Untitled