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    2SJ168 Price and Stock

    Toshiba America Electronic Components 2SJ168TE85LF

    MOSFET P-CH 60V 200MA SC59
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ168TE85LF Digi-Reel 12,610 1
    • 1 $1.25
    • 10 $0.785
    • 100 $1.25
    • 1000 $0.36663
    • 10000 $0.36663
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    2SJ168TE85LF Cut Tape 12,610 1
    • 1 $1.25
    • 10 $0.785
    • 100 $1.25
    • 1000 $0.36663
    • 10000 $0.36663
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    2SJ168TE85LF Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.31979
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    ComSIT USA 2SJ168TE85LF 3,000
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    Toshiba America Electronic Components 2SJ168(TE85L,F)

    Transistor: P-MOSFET; unipolar; -60V; -0.2A; 200mW; SC59
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SJ168(TE85L,F) 1,942 1
    • 1 $0.737
    • 10 $0.537
    • 100 $0.432
    • 1000 $0.4
    • 10000 $0.4
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    EBV Elektronik 2SJ168(TE85L,F) 27 Weeks 3,000
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    2SJ168 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ168 Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min -2) (max -3.5); R DS On 1.3 (max 2); Drain-Source Voltage (V): (max -60); Drain Current (mA): (max -200) Original PDF
    2SJ168 Unknown FET Data Book Scan PDF
    2SJ168 Toshiba P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) Scan PDF
    2SJ168 Toshiba P-Channel MOSFET Scan PDF
    2SJ168 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
    2SJ168TE85L Toshiba 2SJ168 - TRANSISTOR 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal Original PDF
    2SJ168TE85LF Toshiba FETs - Single, Discrete Semiconductor Products, MOSF P CH 60V 200MA S-MINI Original PDF
    2SJ168(TE85L,F) Toshiba 2SJ168 - TRANSISTOR 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-3F1F, S-MINI, SC-59, 3 PIN, FET General Purpose Small Signal Original PDF
    2SJ168TE85R Toshiba 2SJ168 - TRANSISTOR 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose Small Signal Original PDF

    2SJ168 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ168

    Abstract: 2SK1062 Toshiba 2SJ
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062 2SJ168 2SK1062 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062

    2SJ168

    Abstract: 2SK1062
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062 2SJ168 2SK1062

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062 SC-59 Toshiba 2SJ

    2SJ168

    Abstract: 2SK1062
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062 2SJ168 2SK1062

    2SK1062

    Abstract: 2SJ168
    Text: 2SJ168 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ168 ○ 高速スイッチング用 ○ アナログスイッチ用 ○ インタフェース用 • スイッチング時間が速い。 単位: mm : ton = 14 ns 標準 • 順方向伝達アドミタンスが高い。 : |Yfs| = 100 mS (最小)


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    PDF 2SJ168 2SK1062 SC-59 O-236MOD 2SK1062 2SJ168

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SJ168 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


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    PDF 2SJ168

    Untitled

    Abstract: No abstract text available
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062

    2SJ168

    Abstract: 2SK1062
    Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)


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    PDF 2SJ168 2SK1062 2SJ168 2SK1062

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


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    PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


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    PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

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    Abstract: No abstract text available
    Text: TOSHIBA 2SJ168 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS + 0.25 Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance


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    PDF 2SJ168 2SK1062 10/iS

    2SJ168

    Abstract: 2SK1062 2SK106
    Text: TO SH IBA 2SJ168 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance


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    PDF 2SJ168 2SK1062 -100m 2SJ168 2SK106

    2SJ168

    Abstract: 2SK1062 TOSHIBA 2SJ168
    Text: TOSHIBA 2SJ168 2 S J 1 68 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS + 0.25 1.5-0.15 Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance


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    PDF 2SJ168 --50mA 2SK1062 961001EAA2' 2SJ168 TOSHIBA 2SJ168

    2SK106

    Abstract: No abstract text available
    Text: 2SJ168 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm • • Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance


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    PDF 2SJ168 --50mA 2SK1062 2SK106

    2SJ168

    Abstract: No abstract text available
    Text: SILICON P CHANNEL MOS TYPE 2SJ168 HIGH S PEED S WITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. Unit in mm INTERFACE APPLICATIONS. . Excellent Switching Time + 0.5 2.5 -0 .3 : t0n = 1 4 n s T y p . . High Forward Transfer Admittance : I Yfs I = 100mS(Min.)


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    PDF 2SJ168 100mS -50mA 2SK1062 2SJ168

    transistor RJp

    Abstract: No abstract text available
    Text: 2SJ168 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS • • • Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


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    PDF 2SJ168 2SK1062 transistor RJp

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


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    PDF 2SK1062 2SJ168.

    2SJ168

    Abstract: 2SK1062 1318F
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 ANALO G SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Sw itching Time : ton = 14 ns Typ.


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    PDF 2SK1062 2SJ168. SC-59 2SJ168 2SK1062 1318F