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    2SK1155 Search Results

    2SK1155 Result Highlights (1)

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    2SK1155-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-220AB, /Tube Visit Renesas Electronics Corporation
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    2SK1155 Price and Stock

    Rochester Electronics LLC 2SK1155-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1155-E Bulk 163
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    Renesas Electronics Corporation 2SK1155(E)

    Trans MOSFET N-CH Si 450V 5A 3-Pin(3+Tab) TO-220AB Tube
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    Verical 2SK1155(E) 394 180
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    Renesas Electronics Corporation 2SK1155-E

    2SK1155 - Power Field-Effect Transistor, 5A, 450V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1155-E 394 1
    • 1 $1.78
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    2SK1155 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1155 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1155 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1155 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1155 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1155 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1155 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1155 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1155 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1155 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1155 Unknown FET Data Book Scan PDF
    2SK1155-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK1155 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1155

    Abstract: 2SK1155-E 2SK1156 2SK1156-E PRSS0004AC-A
    Text: 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 Previous: ADE-208-1247 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1155, 2SK1156 REJ03G0909-0200 ADE-208-1247) PRSS0004AC-A O-220AB) 2SK1155 2SK1155-E 2SK1156 2SK1156-E PRSS0004AC-A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    2sk1155

    Abstract: Hitachi DSA00279
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1155, 2SK1156


    Original     		PDF 2SK1155, 2SK1156 2SK1155 2SK1156 Hitachi DSA00279

    2SK1155

    Abstract: 2SK1156 Hitachi DSA00395
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB


    Original     		PDF 2SK1155, 2SK1156 O-220AB 2SK1155 2SK1155 2SK1156 Hitachi DSA00395

    Hitachi DSA002712

    Abstract: No abstract text available
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1155, 2SK1156 O-220AB 2SK1155 2SK1156 Hitachi DSA002712

    Untitled

    Abstract: No abstract text available
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2


    Original     		PDF 2SK1155, 2SK1156 220AB 2SK1155 2SK1156

    2SK1155

    Abstract: 2SK1156 DSA003638
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1155, 2SK1156 ADE-208-1247 O-220AB 2SK1155 2SK1155 2SK1156 DSA003638

    2SK1155

    Abstract: 2SK1156
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2


    Original     		PDF 2SK1155, 2SK1156 220AB 2SK1155 2SK1155 2SK1156

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB


    Original     		PDF 2SK1155, 2SK1156 O-220AB 2SK1155 2SK1156 D-85622 Hitachi DSA002780

    2SK1155

    Abstract: 2SK1156 2SK1626 2SK1627
    Text: 2SK1626, 2SK1627 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2


    Original     		PDF 2SK1626, 2SK1627 220FM 2SK1626 2SK1155 2SK1156 2SK1626 2SK1627

    2SK1155

    Abstract: 2SK1156
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2SK1155

    Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator


    Original     		PDF 2SK2114, 2SK2115 ADE-208-1346 O-220CFM 2SK2114 2SK1155 2SK1156 2SK2114 2SK2115 DSA003639

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM


    Original     		PDF 2SK2114, 2SK2115 O-220CFM 2SK2114 2SK2115 D-85622 Hitachi DSA002749

    Untitled

    Abstract: No abstract text available
    Text: 2SK1155,2SK1156 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance H igh speed switching Low drive current N o secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    OCR Scan     		PDF 2SK1155 2SK1156 2SK1156 2SK1155,

    k1155

    Abstract: No abstract text available
    Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SK1155, 2SK1156 k1155

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2sk1197

    Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
    Text: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)


    OCR Scan     		PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2501L NEC 2501L 2SK1158 2SK1159

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972