Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features
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2002/95/EC)
2SK2751
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2
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2002/95/EC)
2SK2751
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2SK2751
Abstract: JISC7030
Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05
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2SK2751
2SK2751
JISC7030
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. ORDERING INFORMATION
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2SK2751
2SK2751G-AE3-R
2SK2751G-AL3-R
OT-23
OT-323
QW-R206-067
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"N-Channel JFET"
Abstract: list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro
Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L
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2SK2751
2SK2751L
2SK2751-AE3-R
2SK2751L-AE3-R
2SK2751-AL3-R
2SK2751L-AL3-R
OT-23
OT-323
QW-R206-067
"N-Channel JFET"
list of n channel fet
Jfet
n-channel JFET sot23
JFET application note
2SK2751
pyro
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2SK2751
Abstract: n-channel JFET sot23
Text: UTC 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES *Low noise-figure NF . *High gate to drain voltage VGDO. APPLICATIONS *For impedance conversion in low frequency. *For pyroelectric sensor. 1 2 MARKING SYMBOL 3 HS SOT-23 1: DRAIN 2: SOURCE 3: GATE
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2SK2751
OT-23
QW-R206-067
2SK2751
n-channel JFET sot23
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2SK2751
Abstract: JISC7030
Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) ● Low noise-figure (NF) ● High gate to drain voltage VGDO
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2SK2751
2SK2751
JISC7030
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2SK2751
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
2SK2751
2SK2751
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2SK2751
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor ue pl d in an c
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2002/95/EC)
2SK2751
2SK2751
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2SK2751
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L
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2SK2751
2SK2751L
2SK2751-AE3-R
2SK2751L-AE3-R
2SK2751-AL3-R
2SK2751L-AL3-R
OT-23
OT-323
QW-R206-087
2SK2751
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Untitled
Abstract: No abstract text available
Text: 2SK2751 Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For pyro-electric sensor +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Rating VGDS – 40 V Drain current ID ±10
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2SK2751
C7030,
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2SK2751
Abstract: JISC7030
Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05
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2SK2751
2SK2751
JISC7030
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2SK2751
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features • Low noise-figure NF • High gate-drain voltage (Source open) VGDO
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2002/95/EC)
2SK2751
2SK2751
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF) ● High gate to drain voltage VGDO
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2SK2751
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features • Low noise-figure NF • High gate-drain voltage (Source open) VGDO
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2SK2751
SJF00016DED
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2SK2751
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2 5˚ 2.90+0.20 –0.05 Unit −40 V Drain current ID 10
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2SK2751
2SK2751
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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Untitled
Abstract: No abstract text available
Text: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current
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OCR Scan
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2SK2751
O-236
SC-59
C7030,
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3BZ marking
Abstract: C703 pyro sensor 2SK2751 C7030 "Field Effect Transistor" JK PANASONIC
Text: Panasonic S ilic o n Junction FETs S m all Sign al 2SK2751 Silicon N -C h an n el Junction For im pedance conversion in low frequency For pyro-electric sensor • Features • Low noise-figure (NF) • High gate-drain voltage V g d o • Downsizing of sets by mini-type package and automatic insertion by
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2SK2751
O-236
SC-59
C7030,
3BZ marking
C703
pyro sensor
2SK2751
C7030
"Field Effect Transistor"
JK PANASONIC
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k3025
Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Text: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8
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GN1010
GN1042
GN1044
GN8061
GN8062
01076B
N01077N
01087B
01091B
01093B
k3025
K3192
k3047
K2538
k2960
K2923
K3035
K3165
K3028
k2576
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