Untitled
Abstract: No abstract text available
Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 2 A Target specification Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic
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2ST3360
2ST3360
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Untitled
Abstract: No abstract text available
Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 2 A Target specification Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic
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PDF
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2ST3360
2ST3360
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transistor st 431
Abstract: No abstract text available
Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 ) s ( ct u d o 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage
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Original
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PDF
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2ST3360
2ST3360
transistor st 431
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Untitled
Abstract: No abstract text available
Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic
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Original
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PDF
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2ST3360
2ST3360
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Untitled
Abstract: No abstract text available
Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic
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Original
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PDF
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2ST3360
2ST3360
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