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    2F PNP Search Results

    2F PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
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    2F PNP Price and Stock

    YAGEO Corporation CC0402FPNPO9BN100

    CAP CER 10PF 50V C0G/NPO 0402
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    DigiKey CC0402FPNPO9BN100 Digi-Reel 198,360 1
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    YAGEO Corporation CC0402FPNPO9BN101

    CAP CER 100PF 50V C0G/NPO 0402
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    DigiKey CC0402FPNPO9BN101 Cut Tape 198,040 1
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    YAGEO Corporation CC0402FPNPO9BN560

    CAP CER 56PF 50V C0G/NPO 0402
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    DigiKey CC0402FPNPO9BN560 Digi-Reel 187,444 1
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    YAGEO Corporation CC0402FPNPO9BN180

    CAP CER 18PF 50V C0G/NPO 0402
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    DigiKey CC0402FPNPO9BN180 Cut Tape 99,706 1
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    YAGEO Corporation CC0402FPNPO9BN150

    CAP CER 15PF 50V C0G/NPO 0402
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    2F PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FFB2907A

    Abstract: FMB2907A FMBT2907A MMPQ2907A SC70-6 SOIC-16
    Text: FMB2907A FFB2907A E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .2F Mark: .2F C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring


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    FMB2907A FFB2907A MMPQ2907A SC70-6 SOIC-16 FFB2907A FMBT2907A 200ns FMB2907A MMPQ2907A SC70-6 SOIC-16 PDF

    marking 2f 3

    Abstract: MMBT2222A MMBT2907A marking 2f
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    OT-23 MMBT2907A MMBT2222A) -10mA -500mA -150mA -15mA -500mA -50mA marking 2f 3 MMBT2222A MMBT2907A marking 2f PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    OT-23 MMBT2907A OT-23 MMBT2222A) Temperature-10V -10mA -500mA -150mA -15mA -500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F


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    OT-23 MMBT2907A OT-23 MMBT2222A) -500mA -150mA -15mA -500mA -50mA PDF

    2SA1037KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)


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    2SA1037KGP OT-23) OT-23 150mW 120mW 2SA1037KGP PDF

    2F PNP SOT23

    Abstract: marking 2f 2f transistor SOt23
    Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)


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    MMBT2907A OT-23 OT-23 MMBT2222A) -150mA -15mA -10mA -500mA 2F PNP SOT23 marking 2f 2f transistor SOt23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23


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    MMBT2907A OT-23 350mWatts OT-23 10mAdc, 30Vdc, IC/10 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    MMBT2907A MMBT2907A OT-23 QW-R206-030 PDF

    pnp 2f

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    MMBT2907A MMBT2907A OT-23 QW-R206-030 pnp 2f PDF

    pnp 2f

    Abstract: marking 2F
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR


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    MMBT2907A MMBT2907A OT-323 QW-R220-001 pnp 2f marking 2F PDF

    Untitled

    Abstract: No abstract text available
    Text: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced


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    PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 -10mA PDF

    2907 TRANSISTOR PNP

    Abstract: 2907 2907 pnp 2907 pnp transistor
    Text: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings


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    Q68000-A8300 OT-89 2907 TRANSISTOR PNP 2907 2907 pnp 2907 pnp transistor PDF

    PN2907A

    Abstract: No abstract text available
    Text: PZT2907A MMBT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    PZT2907A MMBT2907A OT-23 OT-223 PN2907A PDF

    CBVK741B019

    Abstract: F63TNR MMBT2907A PN2222N PN2907A PZT2907A D3000
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    MMBT2907A PZT2907A OT-23 OT-223 CBVK741B019 F63TNR MMBT2907A PN2222N PN2907A PZT2907A D3000 PDF

    ic 701

    Abstract: 602 SOT MMBT2907A
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified


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    MMBT2907A OT-23 350mWatts OT-23 10mAdc, 30Vdc, IC/10 ic 701 602 SOT MMBT2907A PDF

    pn2907a fairchild

    Abstract: MMBT2907A PN2907A PZT2907A 2f pnp
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    MMBT2907A PZT2907A OT-23 OT-223 pn2907a fairchild MMBT2907A PN2907A PZT2907A 2f pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: s e Mit“ a noi -intoa > FMB2907A MMPQ2907A E2 B2 C1 / MMPQ2907A C2 w pin#1 B1 E1 pin#1 B1 SC70-6 SuperSOT -6 M ark: .2F Mark: .2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose am plifier and switch requiring


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    FFB2907A FMBT2907A FMB2907A MMPQ2907A SC70-6 SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ F M ic n ^ r a jr : T n p FM B2907A FFB2907A M M PQ2907A E2 pin #1 E1 S C 7 0 -6 Mark: ,2F Mark: ,2F PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.


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    B2907A FFB2907A PQ2907A FFB2907A FMBT2907A MMPQ2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2907 - 2B FMMT2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    FMMT2907 FMMT2907A FMMT2907 FMMT2907A FMMT2907R FMMT2907AR 200fts. PDF

    FFB2907A

    Abstract: FMB2907A MMPQ2907A SC70-6 SOIC-16
    Text: R F M r.n M n i ir ^ n n E2 B2 . g É / FMBT2907A FMB2907A FFB2907A MMPQ2907A C2 | | l ^ E1 C1 p in #1 1 § I- / MMPQ2907A 111 C2 B1 B2 E2 E1 p in # 1 B1 SC70-6 SuperSOT -6 Mark: ,2F Mark: ,2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use a s a g e n e ra l p u rp o se a m p lifie r an d sw itch re q u irin g


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    FFB2907A FMB2907A MMPQ2907A SC70-6 SOIC-16 200ns FFB2907A FMB2907A MMPQ2907A SC70-6 PDF

    PN2907A

    Abstract: sot-23 M
    Text: / MMPQ2907/ NMT2907 I PZT2907A Discrete POWER & Signal Technologies National Semi conduct or ' " MMBT2907A PN2907A PZT2907A SOT-23 SOT-223 M ark: 2F NMT2907 PN2907A I MMBT2907A MMPQ2907 SOIC-16 C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


    OCR Scan
    MMPQ2907/ NMT2907 PZT2907A PN2907A MMBT2907A OT-23 OT-223 PN2907A sot-23 M PDF

    PN2907A

    Abstract: No abstract text available
    Text: PN2907A MMBT2907A TO-92 SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 SOT-6 Bi Mark: 200 SOIC-16 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from


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    PN2907A MMBT2907A OT-23 PZT2907A OT-223 MMPQ2907 NMT2907 SOIC-16 QD33415 PN2907A PDF

    MARKING 7A SOT89

    Abstract: SXT2907 SXT2907A T2907A
    Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings


    OCR Scan
    Q68000-A8300 OT-89 EHP00899 MARKING 7A SOT89 SXT2907 SXT2907A T2907A PDF

    2907 TRANSISTOR PNP

    Abstract: transistor 2907 Q68000-A8300 MARKING 7C
    Text: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E


    OCR Scan
    Q68000-A8300 OT-89 ----VBE-20V fl53SbDS 23SLDS Q155blfl 2907 TRANSISTOR PNP transistor 2907 MARKING 7C PDF